What is claimed is:
1. A semiconductor device equipped with an interconnection or a via plug, being formed by the damascene method; which comprises
a structure in which a barrier film made of a plurality of layered films containing silicon and carbon, with different carbon contents, is disposed between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
2. A semiconductor device equipped with an interconnection or a via plug, being formed by the damascene method; which comprises
a structure in which a barrier film made of a plurality of layered films containing silicon, carbon and nitrogen, with different carbon contents, is disposed between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
3. A semiconductor device according to claim 1 or 2, wherein said barrier film comprises, on the side of said interconnection or said via plug, a low-carbon-concentration film with a small carbon content and, on the side of said interlayer insulating film, a high-carbon-concentration film with a carbon content larger than that of said low-carbon-concentration film.
4. A semiconductor device according to claim 3; wherein when, in the infrared absorption spectrum for said barrier film, infrared absorption areas of infrared absorption bands having a peak in the vicinity of 810 cm1 and having a peak in the vicinity of 1250 cm1 are denoted by I1 and I2, respectively,
a value of I2I1 for said low-carbon-concentration film in said barrier film is approximately 0.004 to 0.0067, and a value of I2I1 for said high-carbon-concentration film in said barrier film is approximately 0.0067 to 0.014.
5. A semiconductor device according to one of claims 1-4, wherein said interlayer insulating film formed on said barrier film is made of an insulating film whose main constituent elements are silicon, carbon and oxygen.
6. A method of manufacturing a semiconductor device wherein an interconnection or a via plug is formed by the damascene method; which comprises the steps of
disposing a barrier film made of a plurality of layered films containing silicon and carbon, with different carbon contents, between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
7. A method of manufacturing a semiconductor device wherein an interconnection or a via plug is formed by the damascene method; which comprises the steps of
disposing a barrier film made of a plurality of layered films containing silicon, carbon and nitrogen, with different carbon contents, between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
8. A method of manufacturing a semiconductor device according to claim 6 or 7, wherein a low-carbon-concentration film with a small carbon content is formed on the side of said interconnection or said via plug, and thereafter a high-carbon-concentration film with a carbon content larger than that of said low-carbon-concentration film is formed on the side of said interlayer insulating film.
9. A method of manufacturing a semiconductor device according to one of claims 6-8, wherein said interlayer insulating film placed on said barrier film is formed of an insulating film whose main constituent elements are silicon, carbon and oxygen.
10. A method of manufacturing a semiconductor device, which comprises at least the steps of:
forming, on a substrate in which an interconnection or a via plug is formed, a barrier film wherein, at least, a low-carbon-concentration film containing silicon, carbon and nitrogen, with a small carbon content, and a high-carbon-concentration film containing silicon, carbon and nitrogen, with a carbon content larger than that of said low-carbon-concentration film, are laid in this order;
forming, on said barrier film, an interlayer insulating film, main constituent elements of which are silicon, carbon and oxygen;
performing dry etching, while using a resist pattern formed on said interlayer insulating film as a mask and said low-carbon-concentration film as an etching stopper, and thereby removing said interlayer insulating film and said high-carbon-concentration film;
removing said resist pattern by means of ashing with an oxygen-containing gas;
removing said low-carbon-concentration film by etch back to form a via hole or an interconnection trench; and
filling up said via hole or said interconnection trench with a barrier metal and an interconnection material, and thereby forming a via plug or an interconnection.
11. A method of manufacturing a semiconductor device, which comprises at least the steps of:
forming, on a substrate in which a first interconnection is formed, a first barrier film wherein, at least, a low-carbon-concentration film containing silicon, carbon and nitrogen, with a small carbon content, and a high-carbon-concentration film containing silicon, carbon and nitrogen, with a carbon content larger than that of said low-carbon concentration film, are laid in this order;
forming, on said first barrier film, a first interlayer insulating film, a second barrier film and a second interlayer insulating film, main constituent elements of any of which are silicon, carbon and oxygen;
performing dry etching, while using a first resist pattern formed on said second interlayer insulating film as a mask and said low-carbon-concentration film as an etching stopper, and thereby removing said second interlayer insulating film, said second barrier film, said first interlayer insulating film and said high-carbon-concentration film;
removing said first resist pattern by means of ashing with an oxygen-containing gas;
performing dry etching, while using a second resist pattern formed on said second interlayer insulating film as a mask and said second barrier film as an etching stopper, and thereby removing said second interlayer insulating film;
removing said second resist pattern by means of ashing with an oxygen-containing gas;
removing said low-carbon-concentration film by etch back to form an interconnection trench that includes a via hole; and
filling up said interconnection trench with a barrier metal and an interconnection material, and thereby forming a second interconnection.
12. A method of manufacturing a semiconductor device according to one of claims 6-11, wherein, with the plasma CVD (Chemical Vapor Deposition) method being used, said barrier film or said first barrier film is formed continuously in one and the same chamber, changing the source gas pressure.
13. A method of manufacturing a semiconductor device according to claim 12, wherein one of trimethylsilane, tetramethylsilane and trimethylvinylsilane is used for said source gas.
14. A method of manufacturing a semiconductor device according to one of claims 8, 10 and 11, wherein, using the plasma CVD method with a source gas of trimethylsilane, NH3 and He, said low-carbon-concentration film is grown at a gas pressure of approximately 330 to 530 Pa, while said high-carbon-concentration film is grown at a gas pressure of approximately 530 to 730 Pa.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A cable slack manager apparatus comprising:
a base plate comprising a front edge,
at least three cable slack management members, each cable slack management member comprising at least two straight portions and a rounded portion positioned therebetween, with said cable slack management members positioned in spaced apart locations on said base plate and a plane defined by said at least two straight portions of each cable slack management member intersecting an axis positioned along said front edge of said base plate at an angle, wherein said angles formed by said plane and said axis are progressively larger for cable slack management members positioned closer to said front edge of said base plate; and
wherein the cable slack management member positioned closest to said front edge of said base plate defines the largest of said angles and said slack management members each extend circumferentially about 180 degrees.
2. The cable slack manager apparatus of claim 1, wherein said base plate comprises opposing sidewalls extending upwardly relative to said base plate, said opposing sidewalls comprising one or more cable tie receiving members.
3. The cable slack manager apparatus of claim 2, wherein a distance between said slack management members and opposing sidewalls is progressively smaller for slack management members positioned closer to said front edge of said base plate.
4. The cable slack manager apparatus of claim 1, wherein said angle is between about 20 degrees and 60 degrees.
5. The cable slack manager apparatus of claim 1, wherein said cable slack management members are releasably securable to said base plate.
6. A cable slack manager apparatus comprising:
a base plate comprising a front edge and opposing sides;
a plurality of cable slack management members, each cable slack management member comprising a rounded portion, said cable slack management members positioned in spaced apart locations on said base plate, wherein cable slack management members positioned closer to said front edge are positioned closer to said opposing sides; and
wherein said slack manager members comprise at least two straight portions defining a plane that intersects an axis positioned along said front edge of said base plate at an angle, wherein said angles formed by said plane and said axis are progressively larger for cable slack management members positioned closer to said front edge of said base plate.
7. The cable slack manager apparatus of claim 6, wherein said opposing sidewalls comprise one or more cable tie receiving members.
8. The cable slack manager apparatus of claim 6, wherein a distance between said slack management members and opposing sidewalls is progressively smaller for slack management members positioned closer to said front edge of said base plate.
9. The cable slack manager apparatus of claim 6, wherein said slack management members extend circumferentially about 180 degrees.
10. The cable slack manager apparatus of claim 6, further comprising an overhang positioned above said rounded portion, said overhang adapted to retain and prevent unwanted slippage of cable slack.
11. A cable slack manager apparatus comprising:
a base plate comprising a front edge;
a plurality of cable slack management members, each comprising at least two straight portions with a rounded portion positioned therebetween and at least one corner where said straight portions and said rounded portion meet, wherein each of said cable slack management members is angled relative to said front edge, such that when cable slack is routed around said cable slack management members, said cable slack cannot contact said at least one corner; and
wherein said base plate comprises opposing sidewalls, and wherein a distance between said slack management members and opposing sidewalls is smaller for slack management members positioned closer to said front edge of said base plate.
12. The cable slack manager apparatus of claim 11, wherein said opposing sidewalls extend upwardly and comprise one or more cable tie receiving members.
13. The cable slack manager apparatus of claim 11, wherein said slack management members extend circumferentially about 180 degrees.
14. The cable slack manager apparatus of claim 11, further comprising an overhang positioned above said rounded portion, said overhang adapted to retain and prevent unwanted slippage of cable slack.
15. The cable slack manager apparatus of claim 11, wherein said straight portions define a plane intersecting an axis positioned along said front edge of said base plate at an angle, wherein said angles formed by said plane and said axis are progressively larger for cable slack management members positioned closer to said front edge of said base plate.