1. A method of forming a phase change memory structure, the method comprising:
forming a first stack structure including a phase change material between a bottom electrode and a top electrode;
forming a second stack structure a distance from the first stack structure;
depositing a thermally conductive material in a gap between the first stack structure and the second stack structure; and
depositing a dielectric layer between the thermally conductive material and a sidewall of at least one of the first and the second stack structure.
2. The method of claim 1, wherein forming the second stack structure includes forming a phase change material between a bottom electrode and a top electrode.
3. The method of claim 1, including filling the gap between the first stack structure and the second stack structure with the thermally conductive material.
4. The method of claim 1, wherein depositing the thermally conductive material includes depositing a thermally conductive insulative material selected from the group including:
a diamond-like-carbon (DLC) material;
a carbon-carbon (C\u2014C) composite material;
a carbon nanotube material; and
AlN.
5. The method of claim 1, wherein depositing the thermally conductive material includes depositing a metal material.
6. A method of forming a phase change memory structure, the method comprising:
forming a first, a second, and a third metal contact on a substrate, the third metal contact located between the first and second metal contact;
forming a first stack structure a distance from a second stack structure, the first and the second stack structure including a phase change material between a bottom electrode and a top electrode, wherein the bottom electrode of the first stack is coupled to the first metal contact and the bottom electrode of the second stack is coupled to the second metal contact;
forming a dielectric layer on a wall of the first and the second stack structure; and
depositing a heat sink material in a gap between the first stack structure and the second stack structure, the heat sink material deposited over at least a portion of the third metal contact.
7. The method of claim 6, wherein forming the first and the second metal contact includes forming a drain contact coupled to a drain region associated with the substrate.
8. The method of claim 6, wherein forming the third metal contact includes forming a source contact coupled to a source region associated with the substrate.
9. The method of claim 6, including forming a gate of an access transistor between the first and the third metal contact.
10. The method of claim 6, wherein the dielectric layer formed on the wall of the first and the second stack structure is also formed over the third metal contact, and wherein the method includes performing an etch to expose the at least a portion of the third metal contact.
11. The method of claim 6, wherein depositing the heat sink material in the gap between the first stack structure and the second stack structure includes depositing a metal in the gap and on the at least a portion of the third metal contact.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electroluminescent device, comprising:
a cathode;
an anode opposing the cathode, the anode comprising a material selected from a group consisting of aluminum and silver; and
a functional layer located between the anode and cathode, the functional layer comprising a chemical compound of Formula I:
wherein R1-R6 are independently chosen from the group consisting of hydrogen, halo, nitrile (\u2014CN), nitro (\u2014NO2), sulfonyl (\u2014SO2R), sulfoxide (\u2014SOR), sulfonamide (\u2014SO2NR), sulfonate (\u2014SO3R), trifluoromethyl (\u2014CF3), ester (\u2014CO\u2014OR), amide (\u2014CO\u2014NHR or \u2014CO\u2014NRR\u2032), straight-chain or branched (substituted or unsubstituted) C1-C12 alkoxy, straight-chain or branched (substituted or unsubstituted) C1-C12 alkyl, aromatic or non-aromatic (substituted or unsubstituted) heterocyclic, substituted or unsubstituted aryl, mono- or di-(substituted or unsubstituted)arylamine, and (substituted or unsubstituted)alkyl-(substituted or unsubstituted)arylamine.
2. The device of claim 1, wherein the material has a work function ranging from about 3.5 eV to about 4.5 eV.
3. The device of claim 1, wherein the chemical compound has a reduction potential ranged from about \u22120.6V to about 0 V.
4. The device of claim 1, wherein the chemical compound is Formula Ia:
5. The device of claim 1, wherein the functional layer contacts the anode.
6. The device of claim 1, wherein the anode is made of one or more conductive materials, and wherein the device further comprises an intervening layer between the functional layer and the anode.
7. The device of claim 6, wherein the intervening layer comprises one or more metallic oxides.
8. The device of claim 1, wherein the functional layer comprises the chemical compound of Formula I in an amount ranging from 1 wt % to 100 wt %.
9. The device of claim 1, wherein the functional layer has a thickness from 0.1 nm to 10,000 nm.
10. The device of claim 1, further comprising a light-emitting layer between the cathode and the functional layer.
11. The device of claim 1, further comprising a substrate, wherein the anode is located between the substrate and the functional layer.
12. The device of claim 1, wherein the anode comprises a transparent material.
13. The device of claim 1, wherein the anode comprises a metal oxide material.
14. The device of claim 1, further comprising a substrate, wherein the cathode is located between the substrate and the functional layer.
15. The device of claim 1, wherein the cathode comprises a transparent material.
16. The device of claim 1, wherein the anode comprises an opaque material.
17. The device of claim 1, wherein the anode comprises a reflective material having a reflectivity from about 0.3 to about 1.
18. The device of claim 17, wherein the reflective material is reflective to substantially all wavelengths of visible light.
19. The device of claim 1, wherein the anode comprises aluminum.
20. A display comprising:
the electroluminescent device of claim 1; and
an electronic circuit connected to the electroluminescent device.
21. The device of claim 1, wherein the functional layer comprises:
an anode contacting layer contacting the anode between the anode and cathode;
a cathode contacting layer contacting the cathode between the anode and cathode; and
means for forming a virtual electrode within at least one of the anode contacting layer and the cathode contacting layer.