1. A transformed yeast cell comprising a reporter gene under control of a pheromone-responsive promoter, a heterologous G protein-coupled receptor gene, each said gene being under the control of a separate promoter, a mutation in a SCG1GPA1 gene, and a hybrid G \u03b1 protein, which heterologous G protein coupled receptor gene encodes a receptor selected from the group consisting of a \u03b22 adrenergic receptor, an \u03b12-adrenergic receptor, a 5HT-1A receptor, a muscarinic acetylcholine receptor, a growth hormone releasing factor receptor and a somatostatin receptor.
2. A transformed yeast cell comprising a reporter gene under the control of a pheromone-responsive promoter, a gene encoding a heterologous G protein-coupled receptor, each said gene being under the control of a separate promoter, a mutation in SCG1GPA1 gene, and a hybrid G\u03b1 protein.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A plasma processing apparatus comprising a susceptor having a surface for placing a target object, wherein said surface of the susceptor is planar,
a processing vessel in which said susceptor is arranged,
a slot antenna opposed to said susceptor to supply an electromagnetic field into said processing vessel, and
a first dielectric member opposed to a radiation surface of said slot antenna, wherein said first dielectric member is parallel with said surface of the susceptor,
characterized in that said slot antenna comprises
a first conductive plate constituting said radiation surface, wherein said first conductive plate is nonparallel with said surface of the susceptor,
a second conductive plate arranged on a side opposite to said susceptor when seen from said first conductive plate, wherein said second conductive plate is parallel with said surface of the susceptor,
an inlet port formed at a central part of said second conductive plate for introducing said electromagnetic field into a space between said first conductive plate and second conductive plate, and
a plurality of slots formed in said first conductive plate so that said electromagnetic field introduced from said inlet port propagates from a central part of said space to a peripheral part and leaks out gradually in said processing vessel.
2. A plasma processing apparatus according to claim 1, characterized in that said first and second conductive plates of said slot antenna, and said first dielectric member are symmetrical with respect to a common central axis.
3. A plasma processing apparatus according to claim 1, characterized in that said first conductive plate of said slot antenna has an upward convex shape.
4. A plasma processing apparatus according to claim 1, characterized in that said first conductive plate of said slot antenna has a downward convex shape.
5. A plasma processing apparatus according to claim 1, characterized in that a gap between said first and second conductive plates is not less than 5 mm and less than \u03bbAg2 where \u03bbg (\u03bbg>10 mm) is the wavelength of an electromagnetic field between said first and second conductive plates.
6. A plasma processing apparatus according to claim 1, characterized in that said first dielectric member has a flat plate-like shape.
7. A plasma processing apparatus according to claim 1, characterized in that a gap between said first conductive plate and said second conductive plate becomes short from the central part of said second conductive plate toward the peripheral part.
8. A plasma processing apparatus according to claim 1, characterized in that a gap between said first conductive plate and said second conductive plate becomes long from the central part of said second conductive plate toward the peripheral part.
9. A plasma processing apparatus according to claim 1, characterized in that
said first dielectric member has a flat plate-like shape,
said first conductive plate inclines with respect to said first dielectric member,
the radiation direction of said electromagnetic field supplied from said slot antenna to the inside of said processing vessel inclines with respect to the direction of the normal to said first dielectric member.
10. A plasma processing apparatus according to claim 9, characterized in that
a member for changing the angle of inclination of said first conductive plate with respect to said first dielectric member is further provided.
11. A plasma processing apparatus according to claim 1, characterized in that said first dielectric member has a flat plate-like shape.
12. A plasma processing apparatus comprising a susceptor for placing a target object,
a processing vessel in which said susceptor is arranged,
a slot antenna opposed to said susceptor to supply an electromagnetic field into said processing vessel, and
a first dielectric member opposed to a radiation surface of said slot antenna, wherein said first dielectric member is parallel with a surface of the susceptor,
characterized in that said slot antenna comprises
a first conductive plate constituting said radiation surface, wherein said first conductive plate is nonparallel with said surface of the susceptor,
a second conductive plate arranged on a side opposite to said susceptor when seen from said first conductive plate, wherein said first and second conductive plates are nonparallel relative to one another, and said second conductive plate is parallel with said surface of the susceptor
an inlet port formed at a central part of said second conductive plate for introducing said electromagnetic field into a space between said first conductive plate and second conductive plate, and
a plurality of slots formed in said first conductive plate.
13. A plasma processing apparatus according to claim 12, characterized in that said first and second conductive plates of said slot antenna, and said first dielectric member are symmetrical with respect to a common central axis.
14. A plasma processing apparatus according to claim 12, characterized in that said first conductive plate of said slot antenna has an upward convex shape.
15. A plasma processing apparatus according to claim 12, characterized in that said first conductive plate of said slot antenna has a downward convex shape.
16. A plasma processing apparatus according to claim 12, characterized in that a gap between said first and second conductive plates is not less than 5 mm and less than \u03bbg2 where \u03bbg (\u03bbg>10 mm) is the wavelength of an electromagnetic field between said first and second conductive plates.
17. A plasma processing apparatus according to claim 12, characterized in that
said first dielectric member has a flat plate-like shape,
said first conductive plate inclines with respect to said first dielectric member,
the radiation direction of said electromagnetic field supplied from said slot antenna to the inside of said processing vessel inclines with respect to the direction of the normal to said first dielectric member.