1. A method of representing a digital pathology image programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain including at least one color component; and
b. resampling the at least one color component based on importance.
2. The method of claim 1 further comprising applying a linear transform to the at least one resampled color component.
3. The method of claim 1 further comprising image coding and combining the coded image and stain vector information to generate a compressed image.
4. The method of claim 3 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
5. The method of claim 1 wherein stain separation separates the stain including at least two color components.
6. The method of claim 1 wherein resampling comprises reducing a number of bits used to represent a sample value.
7. The method of claim 1 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
8. A method of encoding a digital pathology image programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain including at least two color components;
b. resampling the at least two color components based on importance;
c. applying a linear transform to the at least two resampled color components resulting in transformed data;
d. encoding the transformed data into encoded data; and
e. combining the encoded data and stain vector information to generate a compressed image.
9. The method of claim 8 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
10. The method of claim 8 wherein resampling comprises reducing a number of bits used to represent a sample value.
11. The method of claim 8 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
12. A method of decreasing computational complexity of processing a digital pathology image by using stain separation programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain into color components;
b. implementing importance weighting for determining a weighting for each of the color components to produce a single color component;
c. processing the single color component; and
d. aggregating an output using the processed single color component and additional information.
13. The method of claim 12 wherein processing comprises implementing extended depth of field.
14. The method of claim 12 wherein the additional information comprises original RGB information.
15. The method of claim 12 wherein the additional information comprises the color components.
16. An apparatus for encoding a digital pathology image programmed in a controller in a device comprising:
a. a stain separation module for separating stain components;
b. a resampling module for resampling the stain components based on importance;
c. a transform module for applying a linear transform to the resampled stain components resulting in transformed data;
d. an encoding module for encoding the transformed data; and
e. a combining module for combining the encoded image and stain vector information to generate a compressed image.
17. The apparatus of claim 16 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
18. The apparatus of claim 16 wherein resampling comprises reducing a number of bits used to represent a sample value.
19. The apparatus of claim 16 wherein the apparatus is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
20. An apparatus comprising:
a. a memory for storing an application, the application for:
i. implementing stain separation to separate a stain including at least one color component; and
ii. resampling the at least one color component based on importance; and
b. a processing component coupled to the memory, the processing component configured for processing the application.
21. The apparatus of claim 20 wherein the application is further for applying a linear transform to the at least one resampled color component.
22. The apparatus of claim 20 wherein the application is further for image coding and combining the coded image and stain vector information to generate a compressed image.
23. The apparatus of claim 22 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
24. The apparatus of claim 20 wherein stain separation separates the stain including at least two color components.
25. The apparatus of claim 20 wherein resampling comprises reducing a number of bits used to represent a sample value.
26. The apparatus of claim 20 wherein the apparatus comprises a camera.
27. A method of generating a digital pathology image programmed in a controller in a device comprising:
a. decoding an image resulting in transformed color components;
b. applying an inverse linear transform to the transformed color components resulting in resampled color components;
c. resampling the resampled color components resulting in stain color components; and
d. combining the stain color components and additional information to generate the digital pathology image.
28. The method of claim 27 wherein the additional information comprises stain vector information.
29. The method of claim 27 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A phase change memory cell, comprising:
an interlayer insulating layer formed on a semiconductor substrate;
a first electrode and a second electrode disposed on the interlayer insulating layer;
a phase change material layer disposed between the first and second electrodes, the phase change material layer being one of an undoped GeBiTe layer having a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te), a doped GeBiTe layer containing an impurity and having a composition ratio within a range surrounded by four points (D1(Ge10, Bi20, Te70), D2(Ge30, Bi0, Te70), D3(Ge70, Bi0, Te30) and D4(Ge50, Bi20, Te30)) represented by coordinates on the triangular composition diagram, and a doped GeTe layer containing an impurity and having a composition ratio corresponding to coordinates on a straight line between the points D2 and D3; and
a bit line disposed on the interlayer insulating layer and electrically connected to the second electrode.
2. The phase change memory cell according to claim 1, further comprising:
a cell switching device formed on the semiconductor substrate and electrically connected to the first electrode.
3. The phase change memory cell according to claim 2, wherein the cell switching device is a metal oxide semiconductor (MOS) transistor including a source region and a drain region formed in the semiconductor substrate as well as a word line disposed over a channel region between the source region and the drain region, and the first electrode is electrically connected to one of the source and drain regions.
4. The phase change memory cell according to claim 2, wherein the cell switching device is a cell diode.
5. The phase change memory cell according to claim 4, wherein the cell diode is a vertical cell diode having an second conductivity-type semiconductor and a first conductivity-type semiconductor which are sequentially stacked in the interlayer insulating layer, and the first conductivity-type semiconductor is electrically connected to the first electrode.
6. The phase change memory cell according to claim 5, further comprising:
a word line electrically connected to the second conductivity-type semiconductor of the cell diode.
7. The phase change memory cell according to claim 1, wherein the first electrode is a titanium nitride layer (TiN) or a titanium aluminum nitride layer (TiAlN).
8. The phase change memory cell according to claim 1, wherein the second electrode is a titanium nitride layer (TiN).
9. The phase change memory cell according to claim 1, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by four points (B1(Ge30.77, Bi15.38, Te53.85), B2(Ge48.7, Bi1.0, Te50.3), B3(Ge59.3, Bi0.5, Te40.2) and B4(Ge38.7, Bi16.1, Te45.2)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
10. The phase change memory cell according to claim 1, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by six points (C1(Ge33.33, Bi13.34, Te53.33), C2(Ge48.7, B1.0, Te50.3), C3(Ge54.43, Bi0.47, Te45.1), C4(Ge59.3, Bi0.5, Te40.2), C5(Ge47.1, Bi9.8, Te43.1) and C6(Ge44, Bi9, Te47)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
11. The phase change memory cell according to claim 1, wherein the impurity comprises at least one element selected from the group consisting of nitrogen (N), carbon (C), selenium (Se), indium (In), oxygen (O), gallium (Ga), silicon (Si), stannum (Sn), plumbum (Pb), phosphorus (P), arsenic (As), antimony (Sb) and sulfur (S).
12. The phase change memory cell according to claim 11, wherein content of the impurity is within the range of 0.01 atomic % to 20 atomic %.
13. A phase change memory device, comprising:
a semiconductor substrate having a cell array area and a peripheral circuit area;
an interlayer insulating layer formed on the semiconductor substrate;
a first electrode and a second electrode disposed on the interlayer insulating layer in the cell array area;
a phase change material layer disposed between the first and second electrodes, the phase change material layer being one of an undoped GeBiTe layer having a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te), a doped GeBiTe layer containing an impurity and having a composition ratio within a range surrounded by four points (D1(Ge10, Bi20, Te70), D2(Ge30, Bi0, Te70), D3(Ge70, Bi0, Te30) and D4(Ge50, Bi20, Te30)) represented by coordinates on the triangular composition diagram, and a doped GeTe layer containing an impurity and having a composition ratio corresponding to coordinates on a straight line between the points D2 and D3; and
a bit line disposed on the interlayer insulating layer and electrically connected to the second electrode.
14. The phase change memory device according to claim 13, further comprising:
a cell switching device formed on the semiconductor substrate in the cell array area and electrically connected to the first electrode.
15. The phase change memory device according to claim 14, wherein the cell switching device is a metal oxide semiconductor (MOS) transistor having a source region and a drain region formed in the semiconductor substrate as well as a word line disposed over a channel region between the source region and the drain region, and the first electrode is electrically connected to one of the source and drain regions.
16. The phase change memory device according to claim 14, wherein the cell switching device is a cell diode.
17. The phase change memory device according to claim 16, wherein the cell diode is a vertical cell diode having an second conductivity-type semiconductor and a first conductivity-type semiconductor which are sequentially stacked on the interlayer insulating layer, and the first conductivity-type semiconductor is electrically connected to the first electrode.
18. The phase change memory device according to claim 17, further comprising:
a word line electrically connected to the second conductivity-type semiconductor of the cell diode.
19. The phase change memory device according to claim 13, wherein the first electrode is a titanium nitride layer (TiN) or a titanium aluminum nitride layer (TiAlN).
20. The phase change memory device according to claim 13, wherein the second electrode is a titanium nitride layer (TiN).
21. The phase change memory device according to claim 13, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by four points (B1(Ge30.77, Bi15.38, Te53.95), B2(Ge48.7, Bi1.0, Te50.3), B3(Ge59.3, Bi0.5, Te40.2) and B4(Ge38.7, Bi16.1, Te45.2)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
22. The phase change memory device according to claim 13, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by six points (C1(Ge33.33, Bi13.34, Te53.33), C2(Ge48.7, Bi1.0, Te50.3), C3(Ge54.43, Bi0.47, Te45.1), C4(Ge59.3, Bi0.5, Te40.2), C5(Ge47.1, Bi9.8, Te43.1) and C6(Ge44, Bi9, Te47)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
23. The phase change memory device according to claim 13, wherein the impurity comprises at least one element selected from the group consisting of nitrogen (N), carbon (C), selenium (Se), indium (In), oxygen (O), gallium (Ga), silicon (Si), stannum (Sn), plumbum (Pb), phosphorus (P), arsenic (As), antimony (Sb) and sulfur (S).
24. The phase change memory device according to claim 23, wherein content of the impurity is within the range of 0.01 atomic % to 20 atomic %.
25.-43. (canceled)