1. A rotary growing apparatus comprising:
at least one ring;
support means for said at least one ring;
means for rotatably driving said at least one ring above the rotational axis of said at least one ring;
a plurality of medium retaining members extending transversely of said at least one ring;
each of said plurality of medium retaining members being secured to said at least one ring;
at least one light source interiorly of said at least one ring; and
said at least one ring being comprised of a plurality of ring segments each having first and second ends, each of said ring segments having attachment means at each of said first and second ends for securement to an adjacent ring segment, each ring segment being secured to an adjacent ring segment by means of a mechanical fastener extending through apertures located in said ring segment, one of said apertures being a slot to permit an adjustable angle between adjacent ring segments, the arrangement being such that different size rings may be assembled from said ring segments.
2. The rotary growing apparatus of claim 1 further including a second ring, said second ring being comprised of a plurality of second ring segments, each second ring segment being secured to an adjacent ring segment by means of a mechanical fastener extending through apertures located in said second ring segment, one of said apertures being a slot to permit an adjustable angle between adjacent second ring segments.
3. The rotary growing apparatus of claim 2 wherein each of said plurality of medium retaining members has a base and at least one side wall to define a medium receiving space, and further including liquid feeding supply means for feeding a liquid to said medium receiving spaces while said rings are rotated.
4. A rotary growing apparatus comprising:
a single ring;
a support means for said single ring;
means for rotatably driving said single ring about a rotational axis of said ring, said rotational axis being substantially horizontal;
a plurality of medium retaining members extending transversely of said ring, each of said plurality of medium retaining members having a base and at least one side wall to define a medium receiving space, each of said plurality of medium retaining members having said base secured to said ring whereby said ring is centrally located with respect to said purality of medium retaining members with said plurality of medium retaining members extending beyond said ring on both sides thereof;
liquid feeding means for feeding a liquid to at least one of said plurality of medium receiving space while said ring rotates about said rotational axis; and
at least one light source interiorly of said ring.
5. The rotary growing apparatus of claim 4 wherein said at least one light source is located along said rotational axis.
6. The rotary growing apparatus of claim 4 wherein each of said plurality of medium retaining members is removably secured to said single ring by clip means.
7. The rotary growing apparatus of claim 5 wherein each of said plurality of medium retaining members has a plurality of apertures formed in said base to permit the injection of a liquidto said medium retaining space.
8. The rotary growing apparatus of claim 4 wherein said means for rotatably driving said single ring comprises a drive wheel located to drive said single ring, a drive motor having a rotating shaft, and a drive belt interconnecting said drive shaft and said drive wheel.
9. A rotary growing apparatus comprising:
at least one ring, a support means for said at least one ring;
means for rotatably driving said at least one ring about a rotational axis of said ring, said rotational axis being substantially horizontal;
a plurality of medium retaining members extending transversely of said ring, each of said plurality of medium retaining members having a base and at least one side wall to define a medium receiving space, each of said plurality of medium retaining members having said base thereof secured to said ring, whereby said ring is centrally located with respect to said plurality of beyond said ring on both sides thereof said base having at least one aperture therein;
stationary liquid supply means for supplying liquid to said medium retaining members, said liquid supply means being mounted in on upper quadrant of said ring, said liquid supply means supply liquid through said aperture in said base; and
at least one light source interiorly of said ring.
10. The rotary growing apparatus of claim 9 wherein said at least one light source is located centrally of said at least one ring.
11. The rotary growing apparatus of claim 9 wherein each of said bases of each of said plurality of medium retaining members has a plurality of apertures formed therein.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A heterojunction bipolar transistor, comprising:
a collector layer;
an intrinsic base formed over the collector layer;
an emitter formed over the collector layer and the intrinsic base; and
an extrinsic base surrounding the emitter, the extrinsic base comprising:
a first layer, the first layer comprising at least two different materials, the at least two different materials including near-single-crystalline germanium in regions directly above the intrinsic base and poly-germanium in regions not directly above the intrinsic base; and
a second layer comprising a silicide-free metal germanide formed over the first layer.
2. The heterojunction bipolar transistor of claim 1, wherein the poly-germanium is boron doped.
3. The heterojunction bipolar transistor of claim 1, wherein the poly-germanium comprises p+ poly-germanium.
4. The heterojunction bipolar transistor of claim 1, wherein the metal germanide comprises nickel germanide.
5. The heterojunction bipolar transistor of claim 1, wherein the metal germanide comprises nickel platinum germanide.
6. The heterojunction bipolar transistor of claim 1, wherein the metal germanide comprises at least one of: titanium germanide, zirconium germanide, and ytterbium germanide.
7. The heterojunction bipolar transistor of claim 1, wherein the emitter comprises n+ poly-germanium and silicon.
8. The heterojunction bipolar transistor of claim 1, wherein the intrinsic base comprises boron-doped silicon germanium.
9. The heterojunction bipolar transistor of claim 1, further comprising:
a plurality of contacts to the extrinsic base;
a plurality of contacts to the collector layer; and
at least one contact to the emitter.
10. A method for fabricating a heterojunction bipolar transistor, comprising:
providing a collector layer;
providing an intrinsic base formed over the collector layer;
forming an emitter over the collector layer and the base region; and
surrounding the emitter with an extrinsic base, the extrinsic base comprising:
a first layer, the first layer comprising at least two different materials, the at least two different materials including near-single-crystalline germanium in regions directly above the intrinsic base and poly-germanium in regions not directly above the intrinsic base; and
a second layer comprising a silicide-free metal germanide formed over the first layer.
11. The method of claim 10, wherein the emitter comprises n+ poly-germanium and silicon.
12. The method of claim 10, wherein the intrinsic base comprises p+ silicon germanium.
13. The method of claim 10, wherein the poly-germanium is boron doped.
14. The method of claim 10, wherein the poly-germanium comprises p+ poly-germanium.
15. The method of claim 10, wherein the metal germanide comprises nickel germanide.
16. The method of claim 10, wherein the metal germanide comprises nickel platinum germanide.
17. The method of claim 10, wherein the metal germanide comprises at least one of: titanium germanide, zirconium germanide, and ytterbium germanide.
18. The method of claim 10, further comprising:
forming a plurality of contacts to the extrinsic base;
forming a plurality of contacts to the collector layer; and
forming at least one contact to the emitter.
19. A heterojunction bipolar transistor, comprising:
an intrinsic base;
an n+ poly-germanium and silicon emitter formed over the intrinsic base;
an extrinsic base surrounding the emitter, the extrinsic base comprising;
a first layer, the first layer comprising at least two different materials, the at least two different materials including near-single-crystalline germanium in regions directly above the intrinsic base and poly-germanium in regions not directly above the intrinsic base; and
a second layer comprising a silicide-free metal germanide formed over the first layer;
a plurality of contacts to the extrinsic base;
a plurality of contacts to the collector layer; and
at least one contact to the emitter.
20. The heterojunction bipolar transistor of claim 19, wherein the extrinsic base comprises p+ silicon germanium.