1. A non-planar transistor comprising:
a gate electrode including a gate electrode top and a gate electrode bottom, the gate electrode bottom coupled to a substrate;
a first fin coupled to the gate electrode, a first drain, and a first source;
a second fin coupled to the gate electrode, a second drain, and a second source;
a trench drain contact coupled to the first fin and the second fin, the trench drain contact including a drain contact top and a drain contact bottom; and
a trench source contact coupled to the first fin and the second fin, the trench source contact including a source contact top and a source contact bottom;
wherein the drain contact bottom is formed above the substrate and does not directly contact the substrate.
2. The non-planar transistor of claim 1, wherein the drain contact bottom is formed at or higher than the gate electrode top.
3. The non-planar transistor of claim 1, wherein the drain contact bottom is formed higher than the gate electrode bottom.
4. The non-planar transistor of claim 1, wherein between the first fin and the second fin an insulative material is formed between the drain contact bottom and the substrate.
5. The non-planar transistor of claim 1, wherein the source contact bottom is formed above the substrate and does not directly contact the substrate.
6. The non-planar transistor of claim 1, wherein the entire drain contact bottom is planar.
7. The non-planar transistor of claim 1, wherein the drain contact top is formed higher than the gate electrode top.
8. The non-planar transistor of claim 1, wherein the first drain includes a first drain top and a first drain bottom, the first drain top being formed at or higher than the gate electrode top.
9. A method comprising:
forming a gate electrode including a gate electrode top and a gate electrode bottom,
coupling the gate electrode bottom to a substrate;
coupling a first fin to the gate electrode, a first drain, and a first source;
coupling a second fin to the gate electrode, a second drain, and a second source;
coupling a first transistor terminal contact to the first fin and the second fin, the first transistor terminal contact including a first contact top and a first contact bottom; and
coupling a second transistor terminal contact to the first fin and the second fin, the second transistor terminal contact including a second contact top and a second contact bottom; and
forming the first contact bottom above the substrate and not directly contacting the substrate.
10. The method of claim 9, further comprising forming the first contact bottom at or higher than the gate electrode top.
11. The method of claim 9, further comprising forming, between the first fin and the second fin, an insulative material between the first contact bottom and the substrate.
12. The method of claim 9, further comprising forming the first contact bottom higher than the gate electrode bottom.
13. The method of claim 9, further comprising forming the first contact top higher than the gate electrode top.
14. The method of claim 9, further comprising forming a first drain top at or higher than the gate electrode top, the first drain including the first drain top and a first drain bottom.
15. The non-planar transistor of claim 1, wherein:
the drain contact includes a portion extending the entire length of a dead space located between the first and second fins;
the gate electrode includes a portion extending the entire length of the dead space;
the entire top and bottom of the drain contact portion are both higher than any part of the gate electrode portion.
16. The non-planar transistor of claim 1, wherein the drain contact bottom lowers between the first and second fins and rises above the first and second fins.
17. The non-planar transistor of claim 1, wherein the drain contact bottom includes a first portion extending the entire length between the first and second fins and the entire first portion is higher than any portion of the gate electrode.
18. The non-planar transistor of claim 1, wherein
the drain contact includes a portion extending the entire length of a dead space located between the first and second fins;
the gate electrode includes a portion extending the entire length of the dead space;
the entire top of the drain contact portion is higher than any part of the gate electrode portion,
the entire bottom of the drain contact portion is lower than a part of the gate electrode portion.
19. The non-planar transistor of claim 1, wherein the drain contact bottom includes a first portion extending the entire length between the first and second fins and the entire first portion is planar.
20. The non-planar transistor of claim 1, wherein the trench drain contact directly connects to the first and second fins.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A coating composition comprising an oxidatively drying binder and a reactive diluent, wherein at least a part of the diluent is an ester of a polyunsaturated alcohol and a compound comprising one or more carboxylic acid groups, the ester being without chain-end double bonds;
wherein the polyunsaturated alcohol is selected from the group consisting of geraniol, nerol, and farnesol;
wherein said compound comprising one or more carboxylic acid groups is a dicarboxylic acid selected from the group consisting of malonic acid, succinic acid, itaconic acid, isophthalic acid, naphthalene dicarboxylic acid, cyclohexane dicarboxylic acid, tetrahydrophthalic acid, anhydrides of tetrahydrophthalic acid, and polyesters having two terminal groups with unreacted carboxylic acid moieties; and
wherein the polyester further comprises one or more cyclo-alkyl building blocks.
2. The coating composition according to claim 1, wherein said dicarboxylic acid is malonic acid.
3. The coating composition according to claim 2, further comprising a building block derived from an aldehyde coupled to the malonate backbone by a Knoevenagel reaction.
4. The coating composition according to claim 3, wherein the aldehyde-derived building block is selected from the group consisting of isobutyl, benzyl, and cinnamyl.
5. The coating composition according to claim 1, wherein the binder is an alkyd.
6. The coating composition according to claim 1, further comprising one or more solvents.
7. The coating composition according to claim 1, wherein the composition is a water-borne composition.
8. The coating composition according to claim 1, wherein said polyester having two terminal groups with unreacted carboxylic acid moieties comprises at least one terminal malonate group.
9. The coating composition according to claim 8, further comprising a building block derived from an aldehyde coupled to the malonate backbone by a Knoevenagel reaction.
10. The coating composition according to claim 3, wherein the binder is an alkyd.