1. A semiconductor device comprising:
a pixel portion including a plurality of pixels; and
a source signal line driver circuit portion including a first circuit and a second circuit,
wherein the first circuit is configured to control timing for sampling video signals,
wherein the second circuit is configured to sample the video signals in accordance with the timing and is configured to input sampled video signals to the plurality of pixels,
wherein the second circuit includes a first transistor and a second transistor, the first transistor comprising a first oxide semiconductor film and a second oxide semiconductor film which are stacked with each other,
wherein the first oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is greater than an atomic percent of the Group 13 element other than the indium,
wherein the second oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is less than or equal to an atomic percent of the Group 13 element other than the indium,
wherein the first circuit and the second circuit are electrically connected to each other by a wiring, and
wherein the wiring is electrically connected to a gate of the first transistor and a gate of the second transistor.
2. The semiconductor device according to claim 1, wherein the first circuit includes a semiconductor element using a single crystal semiconductor substrate.
3. The semiconductor device according to claim 1, wherein the first transistor and the second transistor each has a field effect mobility of 20 cm2Vs or higher.
4. The semiconductor device according to claim 1, wherein the first oxide semiconductor film has a composition where an atomic percent of the indium is greater than twice of an atomic percent of the Group 13 element other than the indium.
5. The semiconductor device according to claim 1, wherein the Group 13 element other than the indium is gallium.
6. The semiconductor device according to claim 5, wherein the first oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 3:1:2.
7. The semiconductor device according to claim 5, wherein the second oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:1:1.
8. The semiconductor device according to claim 1, wherein the first transistor and the second transistor each comprises silicon and nitrogen as a gate insulating film.
9. The semiconductor device according to claim 1, wherein the first oxide semiconductor film or the second oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor.
10. The semiconductor device according to claim 1, wherein the first oxide semiconductor film or the second oxide semiconductor film comprises an amorphous oxide semiconductor.
11. The semiconductor device according to claim 1,
wherein the first transistor further comprises a third oxide semiconductor film,
wherein the first oxide semiconductor film is interposed between the second oxide semiconductor film and the third oxide semiconductor film, and
wherein the third oxide semiconductor film comprises indium and a Group 13 element other than the indium and has a composition where an atomic percent of the indium is less than or equal to an atomic percent of the Group 13 element other than the indium.
12. The semiconductor device according to claim 11, wherein the third oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor.
13. The semiconductor device according to claim 11, wherein the third oxide semiconductor film comprises an amorphous oxide semiconductor.
14. The semiconductor device according to claim 11,
wherein the Group 13 element other than the indium is gallium, and
wherein the first oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 3:1:2.
15. The semiconductor device according to claim 11,
wherein the Group 13 element other than the indium is gallium, and
wherein the second oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:3:2.
16. The semiconductor device according to claim 11,
wherein the Group 13 element other than the indium is gallium, and
wherein the third oxide semiconductor film comprises zinc and has a composition where the atomic ratio of indium, gallium, and zinc is substantially 1:1:1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for hydrogenation of polycarboxylic acids or derivatives thereof, comprising:
hydrogenation of polycarboxylic acids or derivatives thereof in the presence of a catalyst, wherein the catalyst comprise an active metal and a support, the support comprises a Group IIA element and a Group IIIA element, and the active metal comprises a Group VIIIB element.
2. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the polycarboxylic acids comprise phthalic acids.
3. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the polycarboxylic acids comprise isophthalic acids, trimellitic acids, trimesic acids, hemimellitic acids or pyromellitic acids.
4. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the polycarboxylic acids comprise terephthalic acids.
5. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the polycarboxylic acid derivatives comprise C1-C30 alkyl ester, C3-C30 cycloalkyl ester or C1-C30 alkoxyalkyl ester.
6. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the polycarboxylic acids or derivatives thereof comprise diethyl phthalate (DEP), dibutyl phthalate (DBP), diisooctyl phthalate (DOP) or diisononyl phthalate.
7. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the catalyst further comprises an additive, and the additive comprises activated carbon, silicon carbide, aluminum oxide, silicon dioxide, titanium dioxide or combinations thereof.
8. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the Group IIA element comprises Mg, Ca, Sr, Ba or combinations thereof.
9. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the Group IIIA element comprises B, Al or combinations thereof.
10. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the Group VIIIB element comprises Pt, Pd, Ru, Rh or combinations thereof.
11. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the active metal comprises 0.2-10 weight % of the catalyst.
12. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 1, wherein the process for hydrogenation of polycarboxylic acids or derivatives thereof is carried out in a reactor, and the reactor comprises a batchwise reactor or trickle bed reactor.
13. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 11, wherein the reactor is conducted in a pressure of about 1-50 Bar.
14. The process for hydrogenation of polycarboxylic acids or derivatives thereof as claimed in claim 11, wherein the reactor is conducted at a temperature of about 100-250\xb0 C.