1-6. (canceled)
7. A method for producing objects of polyethylene terephthalate (PET), particularly of preforms for packaging beverages, which comprises:
a hopper for feeding polymer granules issuing from a dryer,
polymer heating, conveying and pressurizing means, such as a heated screw conveyor,
means for forming the molten polymer,
and in which an inert gas is injected at a point located at one or more of the following locations;
at the dryer;
at the hopper;
downstream of the hopper;
the gas being preheated, before its injection at said location, to a temperature of at least 170\xb0 C., preferably in the temperature range from 170\xb0 C. to 250\xb0 C.
8. The method for producing objects of claim 7, characterized in that said gas injection is carried out in the polymer feed zone of said heating, conveying and pressurizing means i.e. substantially in the transition zone between the hopper and said heating, conveying and pressurizing means.
9. The method for producing objects of claim 7, characterized in that said gas injection is carried out in said heating, conveying and pressurizing means, in what is called the plasticizingmelting zone.
10. The method for producing objects of claim 7, characterized in that said gas injection is carried out with a flow rate of between 5 and 20 Nm3h.
11. The method for producing objects of claim 7, characterized in that the acetaldehyde content of the preform thus produced is lower than the content of preforms that would be obtained in comparable operating conditions but in which the injected inert gas is not preheated.
12. A device for producing objects of polyethylene terephthalate (PET), particularly bottles for packaging beverages, said device comprising:
a hopper (3) for feeding polymer granules issuing from a dryer,
polymer heating, conveying and pressurizing means (1, 2), such as a heated screw conveyor,
means for forming the molten polymer, and
at least one means (4, 5) for injecting inert gas at a point located at the dryer, or at the hopper, or downstream of the hopper,
characterized in that it comprises means (7) for preheating the gas, before its injection at said location, to a temperature of at least 170\xb0 C., preferably in the temperature range from 170\xb0 C. to 250\xb0 C.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor memory device comprising:
a plurality of memory cells each of which is connected between a bit line and a word line and which store cell data;
a plurality of sense amplifiers which are connected to the plurality of memory cells, respectively and which read cell data from the memory cells and write cell data to the memory cells, respectively;
a plurality of sense amplifier write circuits which are connected to the plurality of sense amplifiers, respectively and which write cell data to the sense amplifiers, respectively;
a plurality of data lines which are connected to the plurality of sense amplifier write circuits, respectively and to which the cell data to be written to the sense amplifiers is written;
a data line shift circuit which shifts an arbitrary one of the data lines and replaces the arbitrary one with a data line adjacent thereto;
a plurality of data mask lines connected to the plurality of sense amplifier write circuits, respectively; and
a plurality of mask circuits which are provided for a given number of data mask lines of the plurality of data mask lines and which supply a mask signal, which invalidates write of the cell data to a given number of data lines, to the sense amplifier write circuits connected to the given number of data mask lines,
wherein the plurality of mask circuits each include at least one shift switch circuit and supply the mask signal to a sense amplifier write circuit, which is connected to a mask circuit different from that before a data line is shifted by the data line shift circuit, through the shift switch circuit and supply the mask signal to a sense amplifier write circuit, which is connected to a same mask circuit as that before the data line is shifted, not through the shift switch circuit.
2. The semiconductor memory device according to claim 1, wherein the plurality of mask circuits each include at least one mask signal line, and the mask signal line is connected to a data mask line of the sense amplifier write circuit, which is connected to the same mask circuit as that before the data line is shifted, immediately before each of the sense amplifier write circuits.
3. The semiconductor memory device according to claim 2, wherein the plurality of mask circuits each include at least one buffer circuit, and the mask signal line is connected to a data mask line through the buffer circuit.
4. The semiconductor memory device according to claim 3, further comprising:
at least first and second cell arrays each made up of a given number of memory cells of the plurality of memory cells, the first and second cell arrays being arranged and parallel with each other; and
at least a first plurality of sense amplifier write circuits and a second plurality of sense amplifier write circuits which are provided close to the first and second cell arrays and each of which is made up of a given number of sense amplifier write circuits of the plurality of sense amplifier write circuits,
wherein at least one mask signal line connected to the first plurality of sense amplifier write circuits is connected to the second plurality of sense amplifier write circuits over a first cell array.
5. The semiconductor memory device according to claim 4, wherein the first plurality of sense amplifier write circuits and the second plurality of sense amplifier write circuits are each selectively connected to a common data input line.
6. The semiconductor memory device according to claim 1, further comprising a plurality of internal data lines which connect the plurality of sense amplifiers and the plurality of sense amplifier write circuits, and wherein the plurality of internal data lines each include signal lines of complementary signal lines.
7. The semiconductor memory device according to claim 1, wherein the plurality of bit lines each include signal lines of complementary signal lines.
8. The semiconductor memory device according to claim 1, wherein the data line shift circuit has a data line shift redundancy function of relieving a defective memory cell by shifting a defective data line and replacing the shifted defective data line with a data line adjacent thereto.