1. A method of producing a doped silicon nitride film, doped silicon oxide film, doped silicon oxynitride film or doped silicon carbide film, comprising:
providing at least one silicon precursor,
in the case of a doped silicon nitride film, doped silicon oxide film or doped silicon oxynitride film, providing at least one of a nitrogen precursor or an oxygen precursor,
providing at least one non-silicon precursor, and
forming a doped silicon nitride film, a doped silicon oxide film, a doped silicon oxynitride film or a doped silicon carbide film having a stress tuned to a selected level from said at least one silicon precursor and said at least one non-silicon precursor, and in the case of a doped silicon nitride film, doped silicon oxide film or doped silicon oxynitride film, said nitrogen precursor or said oxygen precursor, provided that when the film is a doped silicon oxide, the non-silicon precursor is neither boron nor phosphorous,
wherein the providing steps are performed by deposition and the deposition is conducted at room temperature.
2. The method of claim 1, wherein the providing of at least one silicon precursor and the providing of at least one non-silicon precursor occurs simultaneously and is in a form of providing flow of a gas.
3. The method of claim 1, wherein the non-silicon precursor is a germanium precursor.
4. The method of claim 1, wherein the non-silicon precursor is selected from the group consisting of a carbon precursor, a boron precursor, an aluminum precursor, an arsenic precursor, a hafnium precursor, a gallium precursor and an indium precursor.
5. The method of claim 1, wherein the doped silicon nitride film is doped with germanium or carbon.
6. The method of claim 1, wherein the non-silicon precursor is an organogermanium compound or a germanium precursor selected from the group consisting of GeH4, GeH3CH3, diborane, trimethyl aluminum (TMA), a C2H2 carbon precursor, trimethyl Ga, trimethyl In, trialkyl amino Ga, trialkyal amino In, GaH3 InH3, AlH3, and aluminum isopropoxide.
7. The method of claim 1, wherein said providing steps are performed by deposition and the deposition is RTCVD, PECVD, LPCVD, remote plasma nitride or ALD.
8. The method of claim 1, further comprising a step of measuring a signal for a non-silicon dopant from the non-silicon precursor, said signal measuring for controlling an etch end point.
9. A method of producing a doped silicon nitride film, doped silicon oxide film, doped silicon oxynitride film or doped silicon carbide film, comprising:
providing at least one silicon precursor,
in the case of a doped silicon nitride film, doped silicon oxide film or doped silicon oxynitride film, providing at least one of a nitrogen precursor or an oxygen precursor, and
providing at least one non-silicon precursor, wherein the non-silicon precursor is an alkyl hydride or an alkyl amino hydride of germanium, carbon, aluminum, boron, arsenic, hafnium, gallium or indium,
wherein a doped silicon nitride film, a doped silicon oxide film, a doped silicon oxynitride film or a doped silicon carbide film is formed, provided that when the film is a doped silicon oxide, the non-silicon precursor is neither boron nor phosphorous.
10. A method of producing a doped silicon nitride film, doped silicon oxide film, doped silicon oxynitride film or doped silicon carbide film, comprising:
providing at least one silicon precursor,
in the case of a doped silicon nitride film, doped silicon oxide film or doped silicon oxynitride film, providing at least one of a nitrogen precursor or an oxygen precursor, and
providing at least one non-silicon precursor,
applying a precursor modification to tune at least one physical property of a produced film,
wherein a doped silicon nitride film, a doped silicon oxide film, a doped silicon oxynitride film or a doped silicon carbide film is formed, provided that when the film is a doped silicon oxide, the non-silicon precursor is neither boron nor phosphorous, and wherein one or more of the following is present
a) the precursor modification is a mixture of at least two precursors,
b) the at least one physical property is stress of a produced film, and
c) the at least one physical property is selected from the group consisting of wet etch rate, dry etch rate, etch end point, deposition rate, and electrical andor optical property.
11. The method of claim 10, wherein the precursor modification is a mixture of at least two precursors.
12. The method of claim 10, wherein the at least one physical property is stress of a produced film.
13. The method of claim 10, wherein \u201cc\u201d is present.
14. A method of producing a doped silicon nitride film, doped silicon oxide film, doped silicon oxynitride film or doped silicon carbide film, comprising:
providing at least one silicon precursor,
in the case of a doped silicon nitride film, doped silicon oxide film or doped silicon oxynitride film, providing at least one of a nitrogen precursor or an oxygen precursor, and
providing at least one non-silicon precursor,
wherein a doped silicon nitride film, a doped silicon oxide film, a doped silicon oxynitride film or a doped silicon carbide film is formed, provided that when the film is a doped silicon oxide, the non-silicon precursor is neither boron nor phosphorous, and
wherein the providing steps are performed by deposition and the deposition is at a lower temperature than if the non-silicon precursor were omitted.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device which provides a test supply voltage during manufacturing and testing of a semiconductor device and an operational supply voltage after certification of the semiconductor device, the operational supply voltage being lower than the test supply voltage, the device comprising:
a clamp circuit having a plurality of voltage regulation devices, the voltage regulation devices controlling a clamping threshold of the clamp circuit, wherein the clamping circuit is configured to allow an output to track an input below a clamping maximum;
a voltage regulator electrically coupled to the clamp circuit, the voltage regulator comprising a switching device configured to bypass at least one diode responsive to the clamping threshold of the clamp circuit and to the operational or test supply voltage, such that the switching device is configured to generate a first control signal;
a control circuit electrically coupled to the voltage regulator circuit which generates a second control signal responsive to the first control signal;
a charge pump which receives the second control signal from the control circuit, the charge pump generating the test supply voltage; and
at least one bypass device connected to at least one of the plurality of voltage regulation devices, wherein the at least one bypass device is activated following the certification of the semiconductor device to bypass the at least one of the plurality of voltage regulation devices of the clamp circuit to lower the clamping threshold of the clamp circuit, the voltage regulator generating a third control signal responsive to the lowered clamping threshold of the clamp circuit to cause the charge pump to generate the operational supply voltage.
2. The device of claim 1, wherein the plurality of voltage regulation devices comprise a plurality of diodes.
3. The device of claim 2, wherein the a plurality of diodes are implemented through transistors.
4. A device which provides a test supply voltage during manufacturing and testing of a semiconductor device and an operational supply voltage after certification of the semiconductor device, the operational supply voltage being lower than the test supply voltage, the device comprising:
a clamp circuit having a plurality of voltage regulation devices, the voltage regulation devices controlling a clamping threshold of the clamp circuit, wherein the clamping circuit is configured to allow an output to track an input below a clamping maximum;
a voltage regulator electrically coupled to the clamp circuit, the voltage regulator comprising a switching device configured to bypass at least one diode responsive to the clamping threshold of the clamp circuit and to the operational or test supply voltage, such that the switching device is configured to generate a first control signal;
a control circuit electrically coupled to the voltage regulator circuit which generates a second control signal responsive to the first control signal;
a charge pump which receives the second control signal from the control circuit, the charge pump generating the test supply voltage; and
at least one bypass device connected to at least one of the plurality of voltage regulation devices, the bypass device comprising a fuse in series with a transistor, wherein the at least one bypass device is activated following the certification of the semiconductor device to bypass the at least one of the plurality of voltage regulation devices of the clamp circuit to lower the clamping threshold of the clamp circuit, the voltage regulator generating a third control signal responsive to the lowered clamping threshold of the clamp circuit to cause the charge pump to generate the operational supply voltage.
5. The device of claim 4, wherein the bypass device is activated by blowing the fuse.
6. The device of claim 4, wherein the value of the operational supply voltage is reduced for each voltage regulation device bypassed.
7. The device of claim 4, wherein the voltage regulation devices limit the maximum voltage output of the clamp circuit.
8. The device of claim 4, wherein the first control signal reduces the test supply voltage when the voltage regulation devices limit the output of the clamp circuit.
9. The device of claim 4, wherein the third control signal reduces the operational supply voltage when the non-bypassed voltage regulation devices limit the output of the clamp circuit.
10. A device which provides a test supply voltage during manufacturing and testing of a semiconductor device and an operational supply voltage after certification of the semiconductor device, the operational supply voltage being lower than the test supply voltage, the device comprising:
means for controlling an output of a clamp circuit, wherein the clamping circuit is configured to allow an output to track an input below a maximum;
means for generating a first control signal based upon the output of the clamp circuit, the means for generating comprising switching means configured to bypass at least one diode responsive to the output of the clamp circuit and to the operational or test supply voltage;
means for generating a second control signal responsive to the first control signal;
means for generating the test supply voltage responsive to the second control signal;
means for limiting the output of the clamp circuit;
means for generating a third control signal based upon the limited output of the clamp circuit; and
means for generating the operational supply voltage.
11. The device of claim 10, wherein the means for controlling the output of the clamp circuit comprise a plurality of diodes.
12. The device of claim 11, wherein the a plurality of diodes are implemented through transistors.
13. The device of claim 10, wherein the means for limiting the output of the clamp circuit comprise a fuse.
14. The device of claim 10, wherein the means for limiting the output of the clamp circuit comprise a transistor.
15. A device comprising:
a clamp circuit having a plurality of voltage regulation devices, the voltage regulation devices controlling a clamping threshold of the clamp circuit, wherein the clamping circuit is configured to allow an output to track an input below a clamping maximum;
a voltage regulator electrically coupled to the clamp circuit, the voltage regulator comprising a switching device configured to bypass at least one diode responsive to the clamping threshold of the clamp circuit and to the operational or test supply voltage, such that the switching device is configured to generate a first control signal;
a control circuit electrically coupled to the voltage regulator circuit which generates a second control signal responsive to the first control signal;
a charge pump electrically coupled to the control circuit, the charge pump generating a voltage in response to the second control signal from the control circuit;
at least one bypass device connected to at least one of the plurality of voltage regulation devices, wherein the at least one bypass device is reversibly activated to reversibly bypass the at least one of the plurality of voltage regulation devices of the clamp circuit, thereby modifying the clamping threshold of the clamp circuit; and
wherein the voltage regulator is configured to clamp the voltage generated by the charge pump.
16. The device of claim 15, wherein the bypass device comprises a fuse in series with a control terminal of a transistor.
17. A device for a semiconductor device, the voltage control circuit generating an internal supply voltage within the semiconductor device, the internal supply voltage derived from an external supply voltage that varies over a range of magnitudes, the device comprising:
a clamp circuit having a plurality of voltage regulation devices, the voltage regulation devices controlling a clamping threshold of the clamp circuit, wherein the clamping circuit is configured to allow an output to track an input below a clamping maximum;
a voltage regulator electrically coupled to the clamp circuit, the voltage regulator comprising a switching device configured to bypass at least one diode responsive to the clamping threshold of the clamp circuit and to the operational or test supply voltage, such that the switching device is configured to generate a first control signal responsive to the clamping threshold of the clamp circuit;
a control circuit electrically coupled to the voltage regulator circuit which generates a second control signal responsive to the first control signal;
a charge pump which receives the second control signal from the control circuit, the charge pump generating the internal supply voltage from the external supply voltage, the internal supply voltage varying in response to changes in the magnitude of the external supply voltage and having a magnitude greater than the magnitude of the external supply voltage by a differential magnitude responsive to the clamping threshold of the clamp circuit; and
at least one bypass device connected to at least one of the plurality of voltage regulation devices, wherein the at least one bypass device is activated following testing of the semiconductor device to bypass the at least one of the plurality of voltage regulation devices of the clamp circuit to lower the clamping threshold of the clamp circuit, the voltage regulator generating a third control signal responsive to the lowered clamping threshold of the clamp circuit to cause the charge pump to generate the internal supply voltage at an operational magnitude having a reduced differential magnitude with respect to magnitude of the external supply voltage.
18. The device of claim 1, wherein the switching device comprises a transistor.
19. The device of claim 4, wherein the switching device comprises a second transistor.
20. The device of claim 10, wherein the switching means comprises a transistor.
21. The device of claim 15, wherein the switching device comprises a transistor.
22. The device of claim 17, wherein the switching device comprises a transistor.