1. A method for fabricating a nonvolatile memory device, the method comprising:
forming a tunneling insulation layer and a conductive layer for a floating gate over a substrate;
partially etching the conductive layer, the tunneling insulation layer, and the substrate to form a trench;
forming an isolation layer filling a portion of the trench;
forming spacers on both sidewalls of the conductive layer which is not covered by the isolation layer;
recessing a portion of the exposed isolation layer using the spacers as an etch barrier layer to form a wing spacer;
removing the spacers;
performing a primary cleaning process on the resulting substrate, where the spacers are removed, using a mixed solution of sulphuric acid (H2SO4) and hydrogen peroxide (H2O2) and a mixed solution of ammonium hydroxide (NH4OH), H2O2, and H2O; and
performing a secondary cleaning process on the resulting structure, where the primary cleaning process is completed, using a mixed solution of a hydrogen fluoride (HF) solution and a deionized water and a mixed solution of NH4OH, H2O2, and H2O.
2. The method of claim 1, wherein the primary cleaning process is performed for approximately 230 seconds to approximately 270 seconds, and the secondary cleaning process is performed for approximately 110 seconds to approximately 150 seconds.
3. The method of claim 1, wherein the forming of the spacers comprises:
forming an insulation layer over the conductive layer including the isolation layer; and
etching the insulation layer.
4. The method of claim 3, wherein the insulation layer comprises an oxide layer, a nitride layer, an amorphous carbon layer, or a photoresist resin.
5. The method of claim 1, wherein the isolation layer comprises a high density plasma (HDP) layer or a stacked structure of an HDP layer and a spin on dielectric (SOD) layer.
6. The method of claim 1, further comprising, after performing the secondary cleaning process:
forming a dielectric layer over the conductive layer including the wing spacer; and
forming a control gate over the dielectric layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An immunoapheresis method of treating a patient suffering from dilated cardiomyopathy (DCM) comprising:
having the patient undergo a plurality of immunoapheresis procedures comprising passing the patient’s plasma over a column having coupled thereto a specific ligand selected from the group consisting of a polyclonal or monoclonal anti-human immunoglobulin antibody or a fragment thereof, protein A and protein G,
followed by reinfusion of the patient’s plasma into the patient, wherein at least 80 percent of the patient’s immunoglobulin is removed, and wherein the immunoapheresis procedure is conducted under conditions which promote the binding of the specific ligand to immunocilobulin in the plasma.
2. The method according to claim 1 wherein any autoantibodies recognized by the specific ligand are directed against a molecule selected from the group consisting of \u03b21-adrenergic receptors, ADP-ATP carriers, \u03b1 and \u03b2 myosin heavy chains, and adenine nucleotide translocators.
3. The method according to claim 1 wherein the patient is further treated in parallel or subsequent combination with a \u03b2-blocker, intravenous immunoglobulin, or cardiac assist devices.
4. The method according to claim 1 wherein at least three immunoapheresis procedures are performed on the patient within a one or two week period.
5. The method according to claim 1 wherein the immunoapheresis procedure is conducted for at least once a day for five consecutive days.