1. A composition prepared by reacting:
wherein;
R is alkyl having 8 to 22 carbon atoms;
and
wherein;
R is alkyl having 8 to 22 carbon atoms;
(c) a sorbitan ester conforming to the following structure:
R1 is alkyl having from 7 to 21 carbon atoms;
with a polymerizing agent conforming to the following structure
Cl\u2014CH2CH(OH)CH2Cl
in water:
and
optionally a functionalizing agent selected from the group consisting of:
and mixtures thereof;
wherein:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 6 to 36;
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
2. A composition of claim 1 wherein n is 13.
3. A composition of claim 1 wherein n is 15.
4. A composition of claim 1 wherein n is 17.
5. A composition of claim 1 wherein n is 19.
6. A composition of claim 1 wherein n is 35.
7. A composition of claim 1 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)\u2014SO3M
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
8. A composition of claim 1 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)CH2\u2014SO4M
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
9. A composition of claim 1 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)\u2014CH2\u2014OP(O)\u2014(OM)2
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
10. A composition of claim 1 wherein the functionalizing agent is a mixture of;
Cl\u2014CH2\u2014CH(OH)\u2014SO3M;
Cl\u2014CH2\u2014CH(OH)CH2\u2014SO4M;
and
Cl\u2014CH2\u2014CH(OH)\u2014CH2\u2014OP(O)\u2014(OM)2;
wherein:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 5 to 35;
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
11. A process for conditioning hair or skin which comprises contacting the hair or skin with an effective conditioning concentration of a composition prepared by reacting:
wherein;
R is alkyl having 8 to 22 carbon atoms;
and
wherein;
R is alkyl having 8 to 22 carbon atoms;
(c) a sorbitan ester conforming to the following structure:
R1 is alkyl having from 7 to 21 carbon atoms;
with a polymerizing agent conforming to the following structure
Cl\u2014CH2CH(OH)CH2Cl
in water:
and
optionally a functionalizing agent selected from the group consisting of:
and mixtures thereof;
wherein:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 6 to 36;
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
12. A process of claim 11 wherein the effective conditioning concentration ranges from 0.1 to 25% by weight.
13. A process of claim 11 wherein the effective conditioning concentration ranges from 1% to 15% by weight.
14. A process of claim 12 wherein the functionalizing agent is:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 6 to 36.
15. A process of claim 12 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)\u2014SO3M
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
16. A process of claim 12 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)CH2\u2014SO4M
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
17. A process of claim 12 wherein the functionalizing agent is
Cl\u2014CH2\u2014CH(OH)\u2014CH2\u2014OP(O)\u2014(OM)2
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
18. A process of claim 12 wherein the functionalizing agent is a mixture of;
and
Cl\u2014CH2\u2014CH(OH)\u2014CH2\u2014OP(O)\u2014(OM)2;
wherein:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 5 to 35;
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
19. A process of claim 13 wherein the functionalizing agent is a mixture of;
Cl\u2014CH2\u2014CH(OH)\u2014SO3M;
Cl\u2014CH2\u2014CH(OH)CH2\u2014SO4M;
and
Cl\u2014CH2\u2014CH(OH)\u2014CH2\u2014OP(O)\u2014(OM)2;
wherein:
R1 is CH3\u2014(CH2)n\u2014
n is an integer ranging from 5 to 35;
M is needed for charge balance and is selected from the group consisting of
H, Na, K, or NH4.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a temperature detection circuit that generates a temperature code based on a temperature of the semiconductor device;
a counter circuit that updates a count value thereof each time a refresh command is issued;
a comparison circuit that activates a match signal when the count value is coincident with a value of the temperature code; and
a refresh control circuit that controls based on the match signal whether to perform a refresh operation in response to the refresh command.
2. The semiconductor device as claimed in claim 1, wherein
the comparison circuit includes an SR latch circuit that is set in response to the match signal, and
the refresh control circuit controls, based on an output from the SR latch circuit, whether to perform the refresh operation in response to the refresh command.
3. The semiconductor device as claimed in claim 2, wherein the SR latch circuit is reset when the count value indicates a predetermined value.
4. The semiconductor device as claimed in claim 2, wherein the SR latch circuit is reset when the temperature code is changed.
5. The semiconductor device as claimed in claim 2, wherein the SR latch circuit is reset when a predetermined signal is supplied from outside.
6. The semiconductor device as claimed in claim 5, wherein the predetermined signal includes a self-refresh command.
7. The semiconductor device as claimed in claim 2, wherein the SR latch circuit is reset irrespectively of the count value when the temperature code indicates a predetermined value.
8. The semiconductor device as claimed in claim 2, wherein the refresh control circuit prohibits the refresh operation in response to the refresh command when the SR latch circuit is set.
9. The semiconductor device as claimed in claim 2, wherein the refresh control circuit prohibits the refresh operation in response to the refresh command when the SR latch circuit is reset.
10. A semiconductor device comprising:
a temperature detection circuit that generates a temperature code based on a temperature of the semiconductor device;
a counter circuit that updates a count value thereof each time a refresh command is issued;
a comparison circuit that activates a match signal when the count value is coincident with a value of the temperature code; and
a refresh control circuit that performs a refresh operation when the refresh command is issued in a first operation mode and does not perform the refresh operation even when the refresh command is issued in a second operation mode, an operation mode of the refresh control circuit being changed from one of the first and second operation modes to other one of the first and second operation modes when the match signal is activated.
11. The semiconductor device as claimed in claim 10, wherein the operation mode of the refresh control circuit is changed from the other one of the first and second operation modes to the one of the first and second operation modes when the count value indicates a predetermined value.
12. The semiconductor device as claimed in claim 10, wherein the operation mode of the refresh control circuit is changed to the first operation mode when the temperature code is changed.
13. The semiconductor device as claimed in claim 10, wherein the operation mode of the refresh control circuit is changed to the first operation mode when a predetermined signal is supplied from outside.
14. The semiconductor device as claimed in claim 10, wherein the operation mode of the refresh control circuit is changed to the first operation mode irrespectively of the count value when the temperature code indicates a predetermined value.
15. A semiconductor device comprising:
a counter circuit updating a count value thereof each time a refresh command is issued, the count value being recurrently updated from a first value to a second value;
a temperature detection circuit generating a temperature code related to an operating temperature of the semiconductor device, the temperature code taking as a value thereof one of the first value, second value, and intermediate values between the first and second values; and
a control circuit determining whether or not a refresh operation responsive to the refresh command is performed based on the count value and the temperature code.
16. The semiconductor device as claimed in claim 15, wherein the refresh operation is determined to be performed when the count value is updated by issuance of the refresh command in a range between the first value and the value of the temperature code and not to be performed when the count value is updated by issuance of the refresh command in a range between the second value and the value of the temperature code.
17. The semiconductor device as claimed in claim 15, further comprising a refresh counter circuit outputting a refresh address to which the refresh operation is to be performed, the refresh counter circuit updating the refresh address when the control circuit determines that the refresh operation responsive to the refresh command is to be performed, and maintaining the refresh address when the control circuit determines that the refresh operation responsive to the refresh command is not to be performed.
18. The semiconductor device as claimed in claim 15, further comprising:
a plurality of external command terminals; and
a command decoder coupled to the external command terminals to receive a plurality of command signals, and the command decoder issuing the refresh command in response to the command signals.
19. The semiconductor device as claimed in claim 15, wherein the value of the temperature code moves toward the second value when the operating temperature rises and the value of the temperature code moves toward the first value when the operating temperature becomes lower.