1. A kit for creating a cast from which a flexible 3D artificial replica breast mimicking a natural breast can be produced, said kit comprising:
a first elastomer layer conformed to a shape of nipple and areola regions of the natural breast;
a layer of elastic nylon mesh directly engaged against an outer surface of the elastomer layer to prevent premature tearing; and
a second elastomer layer situated over said elastic nylon mesh for creating a seamless impression replica of the nipple and areola regions.
2. The kit of claim 1, further comprising: a layer of melted wax coated against said inner surface of said first elastomer layer, wherein said second elastomeric layer is tinted to a distinct color for simulating an epidermal tissue color of the natural breast, and said wax layer has an embossed serial number engraved therein for identifying a manufacturing date and owner of said replica.
3. The kit of claim 1, wherein the nipple region of said wax layer and said first and second elastomeric layers are provided with a plurality of orifices in such a manner that said orifices pass through an entire thickness of the replica.
4. The kit of claim 3, further comprises: a skin-toned color palette from which a mother can select the color used for making a layer of natural pigments applied to said second elastomeric layer and for providing coloration similar to an epidermal layer of the natural breast.
5. The kit of claim 4, wherein said replica includes a substantially dome-shaped central region, a rigid outer perimeter provided with a curvilinear shape contiguously extending about an entire circumference of said replica, said outer perimeter having first and second orthogonally registered walls concentrically positioned about said central region, and a centrally registered top protrusion monolithically formed with said central region;
wherein said orifices are formed within said top protrusion and spaced from said central region respectively.
6. The kit of claim 5, wherein the nipple region of said wax layer and said first and second elastomeric layers are provided with a plurality of orifices in such a manner that said orifices pass through an entire thickness of the replica.
7. The kit of claim 6, further comprises: a skin color palette from which a layer of natural pigments are chosen to be applied to said second elastomeric layer for providing coloration similar to an epidermal layer of the natural breast.
8. A method for forming a prosthetic 3D replica breast molded from a cast mold of a natural breast, said method comprising the steps of:
a. coating a first layer of an elastomer onto the cast mold of the natural breast;
b. precisely spreading the first elastomer layer across nipple and areola regions of the cast mold of the natural breast before the elastomer cures;
c. while said first elastomer layer is seated on the cast of the natural breast, applying a layer of an elastic nylon mesh on an outer surface of the first elastomer layer to prevent premature tearing; and
d. while said first elastomer layer and said nylon mesh layer are seated on the cast mold of the natural breast, applying a second layer of elastomer over the elastic nylon mesh for creating a seamless replica of the nipple and areola regions.
9. The method of claim 8, further comprising the step of:
e. engraving an embossed serial number into said wax layer for identifying a manufacturing date and an owner of said replica.
10. The method of claim 9, further comprising the steps of:
f. while said first and second elastomer layers and said nylon mesh layer are seated on the cast mold, allowing said first and second elastomer layers to cure in room temperature;
g. removing said replica from the cast mold;
h. layering an inner surface of said first elastomer layer with a layer of melted wax;
i. allowing said wax layer to cure;
j. tinting said second elastomer layer to a distinct color; and
k. correcting defective curvatures of said second elastomer layer along the nipple and areola regions respectively.
11. The method of claim 10, further comprising the steps of:
l. creating a plurality of orifices directly into said nipple and areola regions of said first and second elastomer layers as well as said wax layer;
m. filling an elastomer substance into deep cracks formed in said areola and nipple regions that are in a vicinity of said orifices; and
n. shaving off undesirable protrusions from said nipple and areola regions.
12. The method of claim 10, further comprising the steps of:
o. applying natural pigments to said second elastomer layer for providing coloration similar to an epidermal layer of the natural breast;
p. placing said replica in an elevated pressure compartment so that gases are eliminated from said replica prior to solidification thereof;
q. manually agitating said first and second elastomer layers by hand along multiple planes;
r. applying a volatile solvent onto said second elastomer layer;
s. blending organic pigments on a palate to match various natural colors of said nipple and areola regions; and
t. selectively applying said organic pigments directly onto said nipple and areola regions of said second elastomer layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the strained semiconductor layer has a misfit dislocation density of less than about 105 cmcm2.
2. The structure of claim 1, wherein the semiconductor layer comprises germanium.
3. The structure of claim 1, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.
4. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the strained semiconductor layer has a threading dislocation density selected from the range of about 10 dislocationscm2 to about 107 dislocationscm2.
5. The structure of claim 4, wherein the semiconductor layer comprises germanium.
6. The structure of claim 4, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.
7. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the semiconductor layer has a surface roughness selected from the range of approximately 0.01 nm to approximately 1 nm.
8. The structure of claim 7, wherein the semiconductor layer comprises germanium.
9. The structure of claim 7, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.
10. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the strained semiconductor layer has a thickness uniformity across the substrate of better than approximately \xb110%.
11. The structure of claim 10, wherein the semiconductor layer comprises germanium.
12. The structure of claim 10, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.
13. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer bonded to the dielectric layer, the bond between the dielectric layer and the strained semiconductor layer maintaining strain in the strained semiconductor layer,
wherein the strained semiconductor layer has a thickness of less than approximately 200 \u212b.
14. The structure of claim 13, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.
15. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the strained semiconductor layer has a thickness of less than approximately 200 \u212b, and comprises germanium.
16. A structure comprising:
a substrate having a dielectric layer disposed thereon; and
a strained semiconductor layer disposed in contact with the dielectric layer,
wherein the semiconductor layer has a surface germanium concentration of less than approximately 1\xd71012 atomscm2.
17. The structure of claim 16, wherein the semiconductor layer comprises at least one of a group II, a group III, a group V, and a group VI element.
18. The structure of claim 16, further comprising:
a transistor including:
a gate disposed above the strained semiconductor layer, the gate comprising a material selected from the group consisting of a doped semiconductor, a metal, and a metallic compound.