1. A manufacturing method of a microcrystalline silicon film comprising the steps of:
forming a first microcrystalline silicon film over an insulating film by a first plasma CVD method, under a first condition by alternately supplying a first supply gas including a first deposition gas and first hydrogen, and a second supply gas including a second deposition gas and second hydrogen; and
forming a second microcrystalline silicon film over the first microcrystalline silicon film by a second plasma CVD method, under a second condition by supplying a third supply gas including a third deposition gas and third hydrogen,
wherein the first microcrystalline silicon film comprises mixed phase grains comprising a silicon crystallite and amorphous silicon,
wherein the first condition is a condition that a first treatment chamber is set to be higher than or equal to 67 Pa and lower than or equal to 1333 Pa, and the second condition is a condition that a second treatment chamber is set to be higher than or equal to 1333 Pa and lower than or equal to 13332 Pa,
wherein a flow rate of the first hydrogen is greater than or equal to 50 times and less than or equal to 1000 times a flow rate of the first deposition gas,
wherein a flow rate of the second deposition gas is less than the flow rate of the first deposition gas so as to primarily cause etching of silicon deposited over the insulating film rather than deposition of silicon over the insulating film, and
wherein a flow rate of the third hydrogen is greater than or equal to 100 times and less than or equal to 2000 times a flow rate of the third deposition gas.
2. The manufacturing method of the microcrystalline silicon film according to claim 1, further comprising the step of:
forming a third microcrystalline silicon film over the second microcrystalline silicon film by a third plasma CVD method, under a third condition by supplying a fourth supply gas including a fourth deposition gas and fourth hydrogen,
wherein the third condition is a condition that a third treatment chamber is set to be higher than or equal to 1333 Pa and lower than or equal to 13332 Pa, and
wherein a flow rate ratio of the fourth hydrogen to the fourth deposition gas is higher than a flow rate ratio of the third hydrogen to the third deposition gas.
3. The manufacturing method of the microcrystalline silicon film according to claim 1, wherein a rare gas is contained in at least one of the first supply gas to the third supply gas.
4. The manufacturing method of the microcrystalline silicon film according to claim 2, wherein a rare gas is contained in at least one of the first supply gas to the fourth supply gas.
5. The manufacturing method of the microcrystalline silicon film according to claim 1, wherein a crystallinity of the mixed phase grains is set to be higher by the first condition than the second condition.
6. The manufacturing method of the microcrystalline silicon film according to claim 1, wherein a crystal growth rate of the mixed phase grains in the first condition is higher than a crystal growth rate of the mixed phase grains in the second condition.
7. The manufacturing method of the microcrystalline silicon film according to claim 1, wherein the flow rate of the second deposition gas is higher than or equal to 0 sccm.
8. The manufacturing method of the microcrystalline silicon film according to claim 1, wherein the second microcrystalline silicon film fills a space between the mixed phase grains of the first microcrystalline silicon film.
9. A manufacturing method of a semiconductor device comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first microcrystalline silicon film over the gate insulating film by a first plasma CVD method, under a first condition by alternately supplying a first supply gas including a first deposition gas and first hydrogen, and a second supply gas including a second deposition gas and second hydrogen;
forming a second microcrystalline silicon film over the first microcrystalline silicon film by a second plasma CVD method, under a second condition by supplying a third supply gas including a third deposition gas and third hydrogen; and
forming a source region and a drain region over the second microcrystalline silicon film,
wherein the first microcrystalline silicon film comprises mixed phase grains comprising a silicon crystallite and amorphous silicon,
wherein the first condition is a condition that a first treatment chamber is set to be higher than or equal to 67 Pa and lower than or equal to 1333 Pa, and the second condition is a condition that a second treatment chamber is set to be higher than or equal to 1333 Pa and lower than or equal to 13332 Pa,
wherein a flow rate of the first hydrogen is greater than or equal to 50 times and less than or equal to 1000 times a flow rate of the first deposition gas,
wherein a flow rate of the second deposition gas is less than the flow rate of the first deposition gas so as to primarily cause etching of silicon deposited over the gate insulating film rather than deposition of silicon over the gate insulating film, and
wherein a flow rate of the third hydrogen is greater than or equal to 100 times and less than or equal to 2000 times a flow rate of the third deposition gas.
10. The manufacturing method of the semiconductor device according to claim 9, further comprising the step of:
forming a third microcrystalline silicon film over the second microcrystalline silicon film by a third plasma CVD method, under a third condition by supplying a fourth supply gas including a fourth deposition gas and fourth hydrogen before forming the source region and the drain region,
wherein the third condition is a condition that a third treatment chamber is set to be higher than or equal to 1333 Pa and lower than or equal to 13332 Pa, and
wherein a flow rate ratio of the fourth hydrogen to the fourth deposition gas is higher than a flow rate ratio of the third hydrogen to the third deposition gas.
11. The manufacturing method of the semiconductor device according to claim 9, wherein a rare gas is contained in at least one of the first supply gas to the third supply gas.
12. The manufacturing method of the semiconductor device according to claim 10, wherein a rare gas is contained in at least one of the first supply gas to the fourth supply gas.
13. The manufacturing method of the semiconductor device according to claim 9, wherein a crystallinity of the mixed phase grains is set to be higher by the first condition than the second condition.
14. The manufacturing method of the semiconductor device according to claim 9, wherein a crystal growth rate of the mixed phase grains in the first condition is higher than a crystal growth rate of the mixed phase grains in the second condition.
15. The manufacturing method of the semiconductor device according to claim 9, wherein the flow rate of the second deposition gas is higher than or equal to 0 sccm.
16. The manufacturing method of the semiconductor device according to claim 9, wherein the second microcrystalline silicon film fills a space between the mixed phase grains of the first microcrystalline silicon film.
17. The manufacturing method of the semiconductor device according to claim 9, further comprising the step of:
forming an impurity silicon film over the second microcrystalline silicon film before forming the source region and the drain region.
18. The manufacturing method of the semiconductor device according to claim 10, further comprising the step of:
forming an impurity silicon film over the third microcrystalline silicon film before forming the source region and the drain region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A facial exercise device, the device comprising:
(a) an annular ring having a front portion and a back portion;
(b) a tongue arm extending from the back portion of the annular ring, said tongue arm having an axis;
(c) at least two cheek arms extending from the tongue arm in directions relatively perpendicular to the axis of the tongue arm.
2. The facial exercise device of claim 1, further comprising:
(d) a handle extending from the front portion of the annular ring.
3. The facial exercise device of claim 1, wherein the cheek arms are of substantially equal length.
4. The facial exercise device of claim 1, further comprising:
(d) an eyepiece, said eyepiece comprising:
(1) a right eye portion;
(2) a left eye portion; and
(3) a connecting portion connecting the right eye portion and the left eye portion.
5. The facial exercise device of claim 4, wherein the eyepiece is connected to the handle of the facial exercise device.
6. The facial exercise device of claim 4, wherein the eyepiece further comprises:
(4) a first plurality of protrusions extending from the right eye portion in a substantially outward direction; and
(5) a second plurality of protrusions extending from the left eye portion in a substantially outward direction.
7. The facial exercise device of claim 6, wherein the first plurality of protrusions and the second plurality of protrusions are of varying lengths.
8. A facial exercise device, the device comprising:
(a) a right eye portion;
(b) a left eye portion; and
(c) a connecting portion connecting the right eye portion and the left eye portion.
9. The facial exercise device of claim 8, wherein the eyepiece further comprises:
(d) a first plurality of protrusions extending from the right eye portion in a substantially outward direction; and
(e) a second plurality of protrusions extending from the left eye portion in a substantially outward direction.
10. The facial exercise device of claim 9, wherein the first plurality of protrusions and the second plurality of protrusions are of varying lengths.