1. An alternating current (AC) lighting system comprising:
an AC power source;
a plurality of LED packages, each of the LED packages includes a plurality of LED elements, the plurality of LED packages are physically distributed over an illuminating surface of the AC lighting system; and
a plurality of LED groups comprising a first LED group and a second LED group; and
an AC driver comprising a first current sink and a second current sink and connected between the AC power source and the plurality of LED groups,
wherein the first LED group comprises a first set of LED elements including at least one LED element from each of the plurality of LED packages; and
wherein the second LED group comprises a second set of LED elements including at least one LED element other that the first set of LED elements from each of the plurality of LED packages.
2. The AC lighting system of claim 1, wherein the first current sink controls a first LED current flowing through the first LED group, and wherein the second current sink controls a second LED current flowing through the second LED group.
3. The AC lighting system of claim 2, wherein the first current sink is connected to the first LED group, and wherein the second LED group is serially connected to the first LED group via the first current sink.
4. The AC lighting system of claim 2, wherein the plurality of LED groups further comprise a third LED group, and wherein the third LED group comprises a third set of LED elements including at least one LED element other that the first set of LED elements and the second set of LED elements from each of the plurality of LED packages.
5. The AC lighting system of claim 4, wherein the AC driver further comprising a third current sink, and wherein the third current sink controls a third LED current flowing through the third LED group.
6. The AC lighting system of claim 5, wherein the first LED group, the second LED group, and the third LED group are serially connected via the first current sink, the second current sink and the third current sink.
7. The AC lighting system of claim 1, wherein the first set of LED elements of the first LED group includes a first row of LED elements from a first group of LED packages, and a second row of LED elements from a second group of LED packages.
8. An AC lighting driver comprising:
a voltage input for receiving AC power from an AC power source; and
a plurality of current sinks comprising a first current sink and a second current sink;
wherein the first current sink is connected to and drives a first LED group of a plurality of LED groups,
wherein the second current sink is connected to and drives a second LED group of the plurality of LED groups,
wherein the first LED group comprises a first set of LED elements including at least one LED element from each of the plurality of LED packages, and
wherein the second LED group comprises a second set of LED elements including at least one LED element other that the first set of LED elements from each of the plurality of LED packages.
9. The AC lighting driver of claim 8, wherein the first current sink controls a first LED current flowing through the first LED group, and wherein the second current sink controls a second LED current flowing through the second LED group.
10. The AC lighting driver of claim 9, wherein the first current sink is connected to the first LED group and, and wherein the second LED group is serially connected to the first LED group via the first current sink.
11. The AC lighting driver of claim 8, wherein the plurality of LED groups further comprising a third LED group, and wherein the third LED group comprising a third set of LED elements including at least one LED element other that the first set of LED elements and the second set of LED elements from each of the plurality of LED packages.
12. The AC lighting driver of claim 11, wherein the AC driver further comprising a third current sink, and wherein the third current sink controls a third LED current flowing through the third LED group.
13. The AC lighting driver of claim 12, wherein the first LED group, the second LED group, and the third LED group are serially connected via the first current sink, the second current sink and the third current sink.
14. The AC lighting driver of claim 8, wherein the first set of LED elements of the first LED group includes a first row of LED elements from a first group of LED packages, and a second row of LED elements from a second group of LED packages.
15. A method for driving a plurality of LED groups comprising:
providing an LED driver that is configured to control an LED current flowing through a corresponding LED group of the plurality of LED groups using a plurality of current sinks;
grouping a first LED group comprising a first set of LED elements, wherein the first set of LED elements includes at least one LED element from each of the plurality of LED packages; and
grouping a second LED group comprising a second set of LED elements, wherein the second set of LED elements includes at least one LED element other that the first set of LED elements from each of the plurality of LED packages.
16. The method of claim 15 further comprising:
controlling a first LED current flowing through the first LED group using a first current sink of the plurality of current sinks, and
controlling a second LED current flowing through the second LED group using a second current sink of the plurality of current sinks.
17. The method of claim 16, wherein the first current sink is connected to the first LED group, and wherein the second LED group is serially connected to the first LED group via the first current sink.
18. The method of claim 16, further comprising grouping a third LED group comprising a third set of LED elements, wherein the third set of LED elements includes at least one LED element other that the first set of LED elements and the second set of LED elements from each of the plurality of LED packages.
19. The method of claim 18, further comprising controlling a third LED current flowing through the third LED group using a third current sink of the plurality of current sinks.
20. The method of claim 19, further comprising serially connecting the first LED group, the second LED group, and the third LED group.
21. The method of claim 15, wherein the first set of LED elements of the first LED group includes a first row of LED elements from a first group of LED packages, and a second row of LED elements from a second group of LED packages.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating interconnections of a microelectronic device, comprising:
preparing a semiconductor substrate comprising a lower dielectric layer and a lower interconnection;
forming an etch stopper layer and an interlayer dielectric layer on the semiconductor substrate;
forming a via hole in the interlayer dielectric layer so that the etch stopper layer is exposed through the via hole; then
performing carbon doping on the etch stopper layer using an ion implantation process; then
performing trench etching to form a trench in the interlayer dielectric layer so that the trench overlaps part of the via hole;
removing the carbon-doped etch stopper layer; and
filling the via hole and the trench with a conductive material to form an upper interconnection.
2. The method of claim 1, wherein the performing of the trench etching comprises exposing the carbon-doped etch stopper layer to a trench etching gas.
3. The method of claim 1, wherein the ion implantation process is performed at a carbon dosage of approximately 1\xd71014 ionscm2 to 1\xd71015 ionscm2.
4. The method of claim 1, further comprising, before the performing of the carbon doping, forming an etching mask for forming a trench on the interlayer dielectric layer, wherein during the performing of the carbon doping, the etching mask is also carbon-doped, and the carbon-doped etching mask is removed before or during the removal of the carbon-doped etch stopper layer.
5. The method of claim 1, wherein the performing of the carbon doping comprises forming a carbon-containing layer on the etch stopper layer.
6. The method of claim 5, wherein the performing of the trench etching comprises exposing the carbon-containing layer to a trench etching gas.
7. The method of claim 5, wherein the carbon-containing layer is a single layer consisting of an etch stopper layer having more carbon atoms than the original etch stopper layer yet to be carbon-doped or a double layer consisting of the etch stopper layer having more carbon atoms than the original etch stopper layer yet to be carbon-doped and a carbon layer.
8. The method of claim 5, wherein the carbon-containing layer is a polymer containing carbon and fluoride.
9. A method of fabricating interconnections of a semiconductor integrated circuit device, comprising:
preparing a semiconductor substrate comprising a lower dielectric layer and lower interconnection;
forming an etch stopper layer and an interlayer dielectric layer on the semiconductor substrate;
forming a via hole in the interlayer dielectric layer so that the etch stopper layer is exposed through the via hole; then
implanting carbon ions into the etch stopper layer exposed by the via hole; then performing trench etching to form a trench in the interlayer dielectric layer so that the trench overlaps part of the via hole;
removing the carbon-ion-implanted etch stopper layer; and
filling the via hole and the trench with a conductive material to form an upper interconnection.
10. The method of claim 9, wherein implanting carbon ions is performed at a carbon dosage of approximately 1\xd71014 ionscm2 to 1\xd71015 ionscm2.
11. The method of claim 9 further comprising, before the implanting of carbon ions, forming an etching mask for forming a trench on the interlayer dielectric layer, wherein during the implanting of carbon ions, carbon ions are also implanted into the etching mask, and the carbon-ion-implanted etching mask is removed before or during the removal of the carbon-ion-implanted etch stopper layer.
12. The method of claim 9, wherein the implanting of the carbon ions comprises forming a carbon-containing layer on the etch stopper layer.
13. The method of claim 12, wherein the performing of the trench etching comprises exposing the carbon-containing layer to a trench etching gas.
14. The method of claim 12, wherein the carbon-containing layer is a single layer consisting of an etch stopper layer having more carbon atoms than the original etch stopper layer yet to be carbon-doped or a double layer consisting of the etch stopper layer having more carbon atoms than the original etch stopper layer yet to be carbon-doped and a carbon layer.
15. A method of fabricating a microelectronic device, comprising:
forming a lower dielectric layer having a lower electrical interconnect therein, on a semiconductor substrate;
forming an etch-stop layer on the lower electrical interconnect and the lower dielectric layer;
forming an interlayer dielectric layer on the etch-stop layer;
forming a via hole that extends through the interlayer dielectric layer and exposes an upper surface of the etch-stop layer; then
implanting carbon ions through the via hole and into the exposed upper surface of the etch-stop layer to thereby increase a concentration of carbon in the exposed upper surface of the etch-stop layer; then
selectively etching the interlayer dielectric layer to define a trench therein having a bottom through which the via hole extends; then
removing the etch-stop layer to thereby expose the lower electrical interconnect.
16. The method of claim 15, wherein said implanting step comprises implanting carbon ions at a dose level in a range from 1\xd71014 ionscm2 to 1\xd71015 ionscm2.
17. The method of claim 15, wherein said implanting step is preceded by patterning an etching mask comprising a photoresist, on the interlayer dielectric layer; and wherein said implanting step comprises implanting carbon ions into the etching mask.