1. A vertical cavity surface emitting laser including a vertical cavity, the laser comprising:
a substrate;
a bottom distributed Bragg reflector;
a top distributed Bragg reflector;
an electrical current aperture;
top and bottom electrodes; and
the vertical cavity between said bottom and said top distributed Bragg reflectors containing an active region; wherein said vertical cavity includes:
a plurality of holes arranged in a plurality of patterns; and
at least one missing hole defect in each of said patterns, a ratio of the hole diameter divided by the hole pitch being dependent upon the hole depth and set to produce single transverse mode operation; wherein some of said patterns are different and some are matched to provide transverse optical coupling.
2. The structure of claim 1, wherein patterns are matched by having matched dimensions of said holes, pitch between holes, hole depth and defect radius.
3. A vertical cavity surface emitting laser including a vertical cavity, the laser comprising:
the substrate;
a bottom distributed Bragg reflector;
a top distributed Bragg reflector;
an electrical current aperture;
top and bottom electrodes; and
a vertical cavity between said bottom and said top distributed Bragg reflectors containing an active region; wherein said vertical cavity includes:
a plurality of holes arranged in a pattern; and
at least one missing hole defect in the pattern, a ratio of the hole diameter divided by the hole pitch being dependent upon the hole depth and set to produce single transverse mode operation;
wherein a radius of said missing hole defect is set to achieve single mode operation; and
wherein dimensions are set such that the V-parameter of the laser is set such that Veff is less than \u02dc2.405, wherein Veff is defined by:
V
eff
=
2
\u2062
\u03c0
\u2062
\u2062
r
\u03bb
\u2062
n
eff
2
–
(
n
eff
–
\u03b3
\u2062
\u2062
\u0394
\u2062
\u2062
n
)
2
where \u03bb is an operating wavelength, r is an equivalent defect radius, neff is the effective refractive index of the said vertical cavity without a photonic crystal hole pattern and defect structure present, \u0394n is the refractive index reduction introduced by the said pattern and said one or more defects, and y is the depth dependence single transverse mode factor.
4. The laser of claim 3, wherein said plurality of holes and said defect are finite depth holes formed in said top distributed Bragg reflector.
5. The laser of claim 3, wherein said plurality of holes are finite depth holes that extend through said vertical cavity and extend through at least a part of each of said top and bottom distributed Bragg reflectors.
6. The laser of claim 3, wherein said plurality of holes are infinite depth holes.
7. The laser of claim 3, comprising a plurality of defects arranged in said pattern.
8. The structure of claim 7, wherein said pattern comprises a seven point defect pattern.
9. The structure of claim 8, further comprises additional seven point defect patterns.
10. The laser of claim 3, wherein said electrical current aperture comprises an oxidized region in said vertical cavity.
11. The laser of claim 3, wherein said electrical current aperture comprises an ion implanted region in said vertical cavity.
12. The laser of claim 3, wherein \u0394n is set through optimization to an increased amount that maintains Veff is less than \u02dc2.405.
13. The laser of claim 12, wherein \u0394n is set to be greater than 10\u22123.
14. A photonic crystal defect structure in a vertical cavity surface emitting laser including a vertical cavity, the laser comprising:
a substrate;
a bottom electrode electrically contacting said substrate;
a bottom distributed Bragg reflector formed on an opposite side of said substrate from said bottom electrode;
a top distributed Bragg reflector;
a plurality of finite depth holes arranged in a pattern and a missing hole defect in the pattern, the pattern being formed in at least a portion of said top distributed Bragg reflector, the diameter, pitch and depth of the holes being defined by a depth dependence single transverse mode factor;
the vertical cavity including claddings that clad an active region, said vertical cavity being between said top and bottom distributed Bragg reflectors; and
a top electrode including an aperture larger than the pattern;
comprising a plurality of said patterns, wherein some of said patterns are different and some are matched to provide transverse optical coupling.
15. A photonic crystal defect structure in a vertical cavity surface emitting laser, comprising:
a plurality of holes arranged in a pattern; and
at least one missing hole defect in the pattern, a ratio of the hole diameter divided by the hole pitch being dependent upon the hole depth and set to produce single transverse mode operation;
wherein a radius of said missing hole defect is set to achieve single mode operation; and
wherein dimensions are set such that the V-parameter of the laser is set such that Veff is less than \u02dc2.405, wherein Vis defined by:
V
eff
=
2
\u2062
\u03c0
\u2062
\u2062
r
\u03bb
\u2062
n
eff
2
–
(
n
eff
–
\u03b3
\u2062
\u2062
\u0394
\u2062
\u2062
n
)
2
where \u03b3 is an operating wavelength, r is an equivalent defect radius, neff is the effective refractive index of the said vertical cavity without a photonic crystal hole pattern and defect structure present, \u0394n is the refractive index reduction introduced by the said pattern and said one or more defects, and \u03b3 is the depth dependence single transverse mode factor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a high purity nickel target for magnetron sputtering, comprising the steps of:
hot forging a high purity nickel having a purity of at least 4N5 (99.995 wt %);
after said hot forging step, cold rolling said high purity nickel at a rolling rate of 30% or more, and further performing heat treatment thereto for recrystallization at a temperature of 300\xb0 C. or higher; and
repeating said cold rolling and heat treatment steps two or more times to produce a high purity nickel sputtering target having a magnetic permeability of 100 or more.
2. A method according to claim 1, wherein said heat treatment is at a temperature of 300\xb0 C. to 600\xb0 C.
3. A method of manufacturing a high purity nickel alloy target for magnetron sputtering, comprising the steps of:
hot forging a high purity nickel alloy consisting of nickel having a purity of at least 4N5 (99.995 wt %) and 0.5 to 7 at % of an alloying element;
after said hot forging step, cold rolling said high purity nickel alloy at a rolling rate of 30% or more, and further performing heat treatment thereto for recrystallization at a temperature of 300\xb0 C. or higher; and
repeating said cold rolling and heat treatment steps two or more times to produce a high purity nickel alloy sputtering target having a magnetic permeability of 100 or more.
4. A method according to claim 3, wherein said heat treatment is at a temperature of 300\xb0 C. to 600\xb0 C.