1. A bifurcated endoluminal prosthetic assembly, comprising:
a trunk body including a body lumen;
a first branch body having a first branch body lumen in communication with the trunk body lumen;
a shortened branch body having a shortened branch body lumen in communication with the trunk body lumen and at least one access port wherein the lumen has a shortened branch body lumen diameter;
a second branch body positioned adjacent the access port, the second branch body including a second branch body lumen in communication with the trunk body lumen;
a ring positioned within the trunk body lumen and spaced apart from the second branch body, the ring sized to operably engage the trunk body at a region of the trunk body distal to the first branch body and second branch body and wherein the ring diameter is greater than the shortened branch body lumen diameter; wherein the ring retains the second branch body adjacent the access port, and
an elongated connector spanning between the ring and the second branch body, the connector connected at one end to the ring and at another end to the second branch body.
2. The assembly of claim 1 wherein the connector provides a relative range of motion between the second branch body and the ring.
3. The assembly of claim 1 wherein the connector maintains a fixed relative position of the second branch body and the ring.
4. The assembly of claim 1 further comprising at least one latch portion operably attached to the ring, wherein the latch portion is adapted to interlock with a portion of the trunk body.
5. The assembly of claim 1 wherein the ring comprises at least one radiopaque marker.
6. The assembly of claim 1 wherein the ring comprises a biocompatible membrane disposed on a support element.
7. The assembly of claim 1 wherein the ring comprises an expandable ring, wherein the expandable ring expands from a collapsed ring form to an expanded ring form.
8. The assembly of claim 7 wherein the expandable ring comprises an expandable stent.
9. The assembly of claim 7 wherein the expandable ring comprises a self-expanding ring.
10. The assembly of claim 7 wherein the expandable ring comprises a balloon-expandable ring.
11. The assembly of claim 7 wherein the expandable ring comprises an expanded ring diameter greater than a body lumen diameter.
12. The assembly of claim 7 wherein the access port is adapted to receive the collapsed ring form.
13. A bifurcated endoluminal prosthetic assembly, comprising:
a trunk body including a body lumen having a trunk body diameter;
a first branch body extending from the trunk body, the first branch body including a branch lumen in communication with the body lumen;
a shortened branch body extending from the trunk body, the shortened branch body including an access port wherein the lumen has a shortened branch body diameter; and
a ring including at least one connector, the ring spaced apart from and operably attached to a second branch body via the at least one connector, the second branch body having an upper portion sealingly deployed in said access port, the ring being deployed in and engaged with an inside surface of said body lumen at a region of the trunk body distal to and adjacent the access port and having a deployed diameter approximating said body lumen diameter, wherein said at least one connector between said ring and said second branch body provides a retaining force to help retain said second branch body within the access port when a separating force tending to pull said second branch body out of said access port is present.
14. The assembly of claim 13, wherein the connector provides a relative range of motion between said second branch body said ring.
15. The assembly of claim 13 further comprising:
at least one latch portion operably attached to the ring, wherein the latch portion is adapted to interlock with a portion of the trunk body.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated circuit structure, comprising:
a substrate having a first area and a second area;
a low voltage device disposed on the first area of the substrate, comprising:
a first gate stack disposed on the first area of the substrate;
a second gate stack disposed on the first area of the substrate; and
a first epitaxial structure disposed in the first area of the substrate and between the first gate stack and the second gate stack, and having a first beeline distance from the first epitaxial structure to the first gate stack or the second gate stack; and
a high voltage device disposed on the second area of the substrate, comprising:
a third gate stack disposed on the second area of the substrate;
a fourth gate stack disposed on the second area of the substrate; and
a second epitaxial structure disposed in the second area of the substrate and between the third gate stack and the fourth gate stack, and having a second beeline distance from the second epitaxial structure to the third gate stack or the fourth gate stack,
wherein the second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device in a range of about 3 nm to about 10 nm.
2. The integrated circuit structure of claim 1, wherein the low voltage device includes a core metal-oxide semiconductor (MOS) device.
3. The integrated circuit structure of claim 1, wherein the high voltage device includes an input-output (IO) MOS device.
4. The integrated circuit structure of claim 1, wherein the first epitaxial structure, the second epitaxial structure or the both are made of a P-type semiconductor material or an N-type semiconductor material.
5. The integrated circuit structure of claim 1, further comprising an ion-doped layer in the second area of the substrate.
6. The integrated circuit structure of claim 5, wherein the ion-doped layer includes carbon (C), germanium (Ge), boron (B), boron fluoride (BF2), phosphor (P), arsenic (As), antimony (Sb), and the combination thereof.
7. The integrated circuit structure of claim 5, wherein the ion-doped layer is an N-type ion-doped layer or a P-type ion-doped layer.
8. The integrated circuit structure of claim 5, wherein the ion-doped layer is disposed under the third gate stack and the fourth gate stack, and in contact with opposite sidewalls of the second epitaxial structure.
9. An integrated circuit structure, comprising:
a substrate having a first area and a second area;
a low voltage device disposed on the first area of the substrate, comprising:
a first gate stack disposed on the first area of the substrate; and
a first epitaxial structure disposed in the first area of the substrate and adjacent to the first gate stack, and a first beeline distance from the first epitaxial structure to the first gate stack; and
a high voltage device disposed on the second area of the substrate, comprising:
a second gate stack disposed on the second area of the substrate; and
a second epitaxial structure disposed in the second area of the substrate and adjacent to the second gate stack, and a second beeline distance from the second epitaxial structure to the second gate stack,
wherein the second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device in a range of about 3 nm to about 10 nm.
10. The integrated circuit structure of claim 9, wherein the low voltage device includes a core metal-oxide semiconductor (MOS) device.
11. The integrated circuit structure of claim 9, wherein the high voltage device includes an input-output (IO) MOS device.
12. The integrated circuit structure of claim 9, wherein the first epitaxial structure, the second epitaxial structure or the both are made of a P-type semiconductor material or an N-type semiconductor material.
13. An integrated circuit structure, comprising:
a substrate having a first area and a second area;
a low voltage device disposed on the first area of the substrate, comprising:
a first gate stack disposed on the first area of the substrate; and
a first epitaxial structure disposed in the first area of the substrate and adjacent to the first gate stack, and a first beeline distance from the first epitaxial structure to the first gate stack;
an ion-doped layer in the second area of the substrate; and
a high voltage device disposed on the second area of the substrate, comprising:
a second gate stack disposed on the second area of the substrate; and
a second epitaxial structure disposed in the second area of the substrate and adjacent to the second gate stack, and a second beeline distance from the second epitaxial structure to the second gate stack,
wherein the second beeline distance of the high voltage device is greater than the first beeline distance of the low voltage device.
14. The integrated circuit structure of claim 13, wherein the first beeline distance and the second beeline distance have a difference being in a range of about 3 nm to about 10 nm.
15. The integrated circuit structure of claim 13, wherein the ion-doped layer is disposed under the second gate stack, and in contact with a sidewall of the second epitaxial structure.
16. The integrated circuit structure of claim 13, wherein the first epitaxial structure and the second epitaxial structure are individually made of a P-type semiconductor material or an N-type semiconductor material.
17. The integrated circuit structure of claim 13, wherein the ion-doped layer is an N-type ion-doped layer or a P-type ion-doped layer.
18. The integrated circuit structure of claim 13, wherein the ion-doped layer includes carbon (C), germanium (Ge), boron (B), boron fluoride (BF2), phosphor (P), arsenic (As), antimony (Sb), and the combination thereof.