1. A control device, comprising:
a first processor configured to
perform data communications with an electronic device;
a relay device configured to
relay the data communications, the relay device including a buffer for storing data to be transmitted or received in the data communications;
a second processor configured to
check a state of the buffer to detect a buffer full state in which the buffer is full; and
a third processor configured to
check a state of the first processor to detect a halt state in which the first processor has halted, and
reset the relay device upon detecting the halt state and upon the second processor detecting the buffer full state.
2. The control device according to claim 1, wherein
the second processor is placed on a communication path connecting the first processor and the relay device, and
the second processor is configured to
detect the buffer full state on basis of information which is communicated between the first processor and the relay device, the information indicating whether the buffer is full.
3. The control device according to claim 1, wherein
the third processor is configured to
detect the halt state by referring to information which is updated by the first processor.
4. The control device according to claim 3, wherein
the third processor is configured to
send the first processor an instruction to update the information.
5. The control device according to claim 1, wherein
the second processor is configured to
check the state of the buffer upon the third processor detecting the halt state.
6. The control device according to claim 1, wherein
the first processor is configured to
detect an abnormality in the relay device, and
perform, upon detecting the abnormality, port invalidation of invalidating a port of the relay device,
the third processor is configured to
detect the halt state when the abnormality is not eliminated even though the port invalidation is performed, and
the second processor is configured to
detect the buffer full state when the abnormality is not eliminated even though the port invalidation is performed.
7. A control method performed by a control device including a first processor, a second processor, a third processor, and a relay device including a buffer for storing data to be transmitted to or received from the first processor, the control method comprising:
checking, by the second processor, a state of the buffer to detect a buffer full state in which the buffer is full;
checking, by the third processor, a state of the first processor to detect a halt state in which the first processor has halted, and
resetting, by the third processor, the relay device upon detecting the halt state and upon the second processor detecting the buffer full state.
8. The control method according to claim 7, wherein
the second processor detects the buffer full state on basis of information which is communicated between the first processor and the relay device, the information indicating whether the buffer is full.
9. The control method according to claim 7, wherein
the third processor detects the halt state by referring to information which is updated by the first processor.
10. The control method according to claim 9, further comprising:
sending by the third processor, to the first processor, an instruction to update the information.
11. The control method according to claim 7, wherein
the second processor checks the state of the buffer upon the third processor detecting the halt state.
12. The control method according to claim 7, further comprising:
detecting, by the first processor, an abnormality in the relay device; and
performing by the first processor, upon detecting the abnormality, port invalidation of invalidating a port of the relay device,
wherein
the third processor detects the halt state when the abnormality is not eliminated even though the port invalidation is performed, and
the second processor detects the buffer full state when the abnormality is not eliminated even though the port invalidation is performed.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A stable solution of molecular material, comprising:
a first type of organic or organometallic molecule (M1);
a second type of organic or organometallic molecule or of ion (M2);
the first type at least having groups allowing electron delocalization;
a third type of molecule (M3) that may be a surfactant or a solvent, capable of combining with the first or the second type of molecule or of ion (M1, M2), to form an adduct in solution whose presence prevents the precipitation of the compound M1-M2 formed by reaction between M1 and M2 and makes it possible to obtain a solution whose concentration of compound M1-M2 is greater than that governed by the precipitation constant of the compound M1-M2 in the absence of molecules of the third type M3.
2. The stable solution of molecular material according to claim 1, further comprising a fourth type of molecule (M4), which may be a surfactant or a solvent, capable of combining with the first and the second types of organic or organometallic molecule (M1, M2).
3. The stable solution of molecular material according to claim 1, wherein the first or second type of molecule is an organic or organometallic molecule, or an organic or organometallic molecular salt.
4. The stable solution of molecular material according to claim 1, wherein one or more of the third and fourth type of molecule (M3, M4) is a compound comprising functions of amine or carboxylic acid or phosphine type or molecules bearing a \u03c0 coordinating system.
5. The stable solution of molecular material according to claim 1, wherein one or more of the first and second type of molecule or of ion (M1, M2) is an organic or organometallic molecule of donor type, comprising one or more of:
TTF derivative;
transition metal complexes;
complexes of metals with bisdithiolene ligands: M(dmit)2 in neutral or charged state with M: Ni, Pd, Pt and dmit: 4,5-dimercapto-1,3-dithiole-2-thione;
complexes of metals with ligands of TTF-bisdithiolene type such as tmdt: M(tmdt)2 in neutral or charged state with tmdt: trimethylenetetrathiafulvalene-dithiolate and M: Ni, Pd, Pt;
complexes of metals with dcbdt ligands: M(dcbdt)2, in neutral or charged state with dcbdt: dicyanobenzenedithiolate and M: Ni, Pd, Pt; and
perylene.
6. The stable solution of molecular material according to claim 1, wherein one or more of the first and second type of molecule (M1, M2) is an organic or organometallic molecule of acceptor type, comprising one or more of:
a TCNQ derivative: tetracyano-p-quinodimethane;
TNAP: 11,11,12,12-tetracyanonaphtho-2,6-quino dimethane; and
DCNQI: dicyanoquinonediimine.
7. The stable solution of molecular material according to claim 1, wherein when only one first type or second type is of the organic or organometallic molecule type, the other type may be of ionic type and may be included among one of the following anions: hexafluorophosphates, triiodide, chloride, bromide, arseniates, antimoniates.
8. The stable solution of molecular material according to claim 1, wherein when only one first type or second type is of organic or organometallic molecule type, the other type may be of ionic type and may be included among one of the following cations: Na+ (sodium), K+ (potassium) or a transition metal cation.
9. The stable solution of molecular material according to claim 1, wherein:
the molecules of the first type are TTF molecules;
the molecules of the second type are TCNQ molecules; and
the molecules of the third type are long-carbon-chain amine molecules.
10. The stable solution of molecular material according to claim 2, wherein:
the molecules of the first type are TTF molecules;
the molecules of the second type are TCNQ molecules; and
the molecules of the third type are long-carbon-chain amine molecules.
11. A process for preparing a stable solution of molecular material according to claim 1, said process comprising the mixing of the first type of organic or organometallic molecule (M1) and of the second type of organic or organometallic molecule or of ion (M2), the first type at least having groups allowing electron delocalization, and being capable of forming a molecular crystal, in the presence of at least the third type of molecule (M3) which may be a surfactant or a solvent, capable of combining with the first or with the second type of molecule or of ion (M1, M2), to form an adduct in solution whose presence prevents the precipitation of the compound M1-M2 formed by reaction between M1 and M2 and makes it possible to obtain a solution whose concentration of compound M1-M2 is greater than that governed by the precipitation constant of the compound M1-M2 in the absence of molecules of the third type M3.
12. The process for preparing a stable solution of molecular material comprising molecular materials according to claim 11, further comprising the addition of the third type of molecule (M3) and of the fourth type of molecule (M4) which may be a surfactant or a solvent, capable of combining with the first and the second types of organic or organometallic molecule (M1, M2).
13. The process for preparing a stable solution of molecular material according to claim 11, the following steps:
the mixing of TTF molecules and of long-carbon-chain amine molecules in an organic solvent, so as to obtain a primary mixture; and
the addition of TCNQ molecules in an organic solvent to the primary mixture.
14. The process for preparing a stable solution of molecular material according to claim 11, further comprising:
the mixing of TTF3(BF4)2 molecules and of long-carbon-chain amine molecules in an organic solvent, so as to obtain a primary mixture; and
the addition of (n-C4H9)4NNi(dmit)2 molecules in an organic solvent to the primary mixture.
15. A process for preparing a nanoparticulate powder of molecular material, said method comprising drying a stable solution of molecular material according to claim 1.
16. A process for manufacturing a film based on molecular material, said process comprising the deposition of a stable solution of molecular material according to claim 1 onto a support, followed by the drying of the said solution.
17. A process for manufacturing a composite material based on molecular material, said process comprising the mixing of a stable solution according to one claim 1 with an organic or inorganic matrix.
18. A process for manufacturing a composite material based on molecular material, said process comprising the mixing of a nanometric powder obtained via the process of claim 15 with an organic or inorganic matrix.
19. A process for the preparation of an electromagnetic absorbent material, said process comprising using a stable solution of molecular material according to claim 1.
20. A process for the preparation of an active material for electronics, said process comprising using a stable solution of molecular material according to claim 1.
21. A process for the preparation of a conductive track or a transistor or a light-emitting diode, said process comprising using a stable solution of molecular material according to claim 1.