1. An active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit being provided over said TFT substrate for controlling said driver TFT,
wherein at least one of a portion of said TFT substrate over which said control circuit chip is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
2. The display of claim 1, wherein in order to install said control circuit in a control circuit accommodation portion of said TFT substrate, said control circuit accommodation portion is made thinner than other portions of said TFT substrate.
3. The display of claim 1, wherein said control circuit is packed over said TFT substrate by COG (chip-on-glass) technology.
4. An active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a bus line provided over said TFT substrate and connected with at least one of said pixel TFTs;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit provided over said TFT substrate for controlling said driver TFT,
wherein at least one of a portion of said TFT substrate over which said control circuit chip is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
5. The display of claim 4, wherein in order to install said control circuit in a control circuit accommodation portion of said TFT substrate, said counter substrate has a thinned portion located opposite to said control circuit accommodation portion.
6. The display of claim 4, wherein said control circuit is packed over said TFT substrate by COG (chip-on-glass) technology.
7. An active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate, said sealing material being provided outside at least said pixel TFTs;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit provided over said TFT substrate for controlling said driver TFT,
wherein at least one of a portion of said TFT substrate over which said control circuit chip is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
8. The display of claim 7, wherein in order to install said control circuit in a control circuit accommodation portion of said TFT substrate, said counter substrate has a thinned portion located opposite to said control circuit accommodation portion.
9. The display of claim 7, wherein said control circuit is packed over said TFT substrate by COG (chip-on-glass) technology.
10. An active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a bus line provided over said TFT substrate and connected with at least one of said pixel TFTs;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate, said sealing material being provided outside at least said pixel TFTs;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit provided over said TFT substrate for controlling said driver TFT,
wherein at least one of a portion of said TFT substrate over which said control circuit chip, is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
11. The display of claim 10, wherein in order to install said control circuit in a control circuit accommodation portion of said TFT substrate, said counter substrate has a thinned portion located opposite to said control circuit accommodation portion.
12. The display of claim 10, wherein said control circuit is packed over said TFT substrate by COG (chip-on-glass) technology.
13. A method of fabricating an active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a bus line provided over said TFT substrate and connected with at least one of said pixel TFTs;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate and outside at least said pixel TFTs;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit provided over said TFT substrate for controlling said driver TFT,
said method comprising:
cutting said TFT substrate and said counter substrate outside said sealing material having said control circuit sealed in said sealing material,
wherein at least one of a portion of said TFT substrate over which said control circuit chip is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
14. The method of claim 13, further comprising the step of thinning a portion of said counter substrate which is located opposite to a control circuit for controlling said driver circuit made up of said driver TFTs, to install said control circuit.
15. The method of claim 13, wherein said control circuit is packed over said TFT substrate by COG (chip-on-glass) technology.
16. A method of fabricating an active matrix liquid crystal display comprising:
a plurality of pixel TFTs arranged in rows and columns over a TFT substrate and arrayed in a matrix;
a bus line provided over said TFT substrate and connected with at least one of said pixel TFTs;
a counter substrate located opposite to said TFT substrate;
a layer of a liquid crystal material provided between said TFT substrate and said counter substrate;
a sealing material sealing around said liquid crystal material and provided between said TFT substrate and said counter substrate;
a driver TFT provided over said TFT substrate; and
a control circuit comprising a control circuit chip sealed in said sealing material, said control circuit provided over said TFT substrate for controlling said driver TFT,
said method comprising:
cutting said TFT substrate and said counter substrate outside said sealing material having said control circuit sealed in said sealing material,
wherein at least one of a portion of said TFT substrate over which said control circuit chip is provided and a portion of said counter substrate adjacent to said control circuit is made thinner than other portions of said TFT substrate and said counter substrate.
17. The method of claim 16, further comprising the step of thinning a portion of said counter substrate which is located opposite to said control circuit, to install said control circuit.
18. A semiconductor device including one liquid crystal panel comprising a TFT substrate and a counter substrate,
wherein said TFT substrate and said counter substrate each comprises a first side edge, a second side edge, a third side edge, and a fourth side edge;
wherein said TFT substrate comprises a glass; and
wherein said counter substrate is located opposite to said TFT substrate,
said semiconductor device comprising:
a pixel TFT provided over said TFT substrate;
a channel formation region provided in a semiconductor film provided over said TFT substrate;
a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween, said pixel TFT comprising said channel formation region and said gate electrode and said gate insulating film;
a bus line provided over said TFT substrate and connected with said pixel TFT, said bus line having a part located adjacent to at least one of the first side edge, the second side edge and the third side edge of said TFT substrate;
a sealing material provided between said TFT substrate and said counter substrate; and
a nonconductive material applied to the first side edge, the second side edge, and the third side edge of said TFT substrate and said counter substrate of said liquid crystal panel,
wherein said nonconductive material is provided on an outer side of said sealing material,
wherein said nonconductive material is not applied to the fourth side edge of said TFT substrate and said counter substrate of said liquid crystal panel, and
wherein said nonconductive material covers the part of the bus line.
19. A semiconductor device including one liquid crystal panel comprising a TFT substrate and a counter substrate,
wherein said TFT substrate and said counter substrate each comprises a first side edge, a second side edge, a third side edge, and a fourth side edge;
wherein said TFT substrate comprises a glass; and
wherein said counter substrate is located opposite to said TFT substrate,
said semiconductor device comprising:
a pixel TFT provided over said TFT substrate;
a channel formation region provided in a semiconductor film provided over said TFT substrate;
a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween, said pixel TFT comprising said channel formation region and said gate electrode and said gate insulating film;
a bus line provided over said TFT substrate and connected with said pixel TFT, said bus line having a part located adjacent to a side edge at least one of the first side edge, the second side edge and the third side edge of said TFT substrate;
a sealing material provided between said TFT substrate and said counter substrate; and
a weakly conductive material applied to the first side edge, the second side edge, and the third side edge of said TFT substrate and said counter substrate of said liquid crystal panel,
wherein said weakly conductive material is provided on an outer side of said sealing material,
wherein said weakly conductive material is not applied to the fourth side edge of said TFT substrate and said counter substrate of said liquid crystal panel, and
wherein said weakly conductive material covers the part of the bus line.
20. A semiconductor device including one liquid crystal panel comprising a TFT substrate and a counter substrate,
wherein said TFT substrate and said counter substrate each comprises a first side edge, a second side edge, a third side edge, and a fourth side edge;
wherein said TFT substrate comprises a glass; and
wherein said counter substrate is located opposite to said TFT substrate,
said semiconductor device comprising:
a pixel TFT provided over a TFT substrate;
a channel formation region provided in a semiconductor film provided over said TFT substrate;
a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween, said pixel TFT comprising said channel formation region and said gate electrode and said gate insulating film;
a driver TFT provided over said TFT substrate;
a bus line provided over said TFT substrate and connected with said pixel TFT, said bus line having a part located adjacent to at least one of the first side edge, the second side edge and the third side edge of said TFT substrate;
a sealing material provided between said TFT substrate and said counter substrate; and
a nonconductive material applied to the first side edge, the second side edge, and the third side edge of said TFT substrate and said counter substrate of said liquid crystal panel,
wherein said nonconductive material is provided on an outer side of said sealing material,
wherein said nonconductive material is not applied to the fourth side edge of said TFT substrate and said counter substrate of said liquid crystal panel, and
wherein said nonconductive material covers the part of the bus line.
21. A semiconductor device including one liquid crystal panel comprising a TFT substrate and a counter substrate,
wherein said TFT substrate and said counter substrate each comprises a first side edge, a second side edge, a third side edge, and a fourth side edge;
wherein said TFT substrate comprises a glass; and
wherein said counter substrate located opposite to said TFT substrate,
said semiconductor device comprising:
a pixel TFT provided over a TFT substrate;
a channel formation region provided in a semiconductor film provided over said TFT substrate;
a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween, said pixel TFT comprising said channel formation region and said gate electrode and said gate insulating film;
a driver TFT provided over said TFT substrate;
a bus line provided over said TFT substrate and connected with said pixel TFT, said bus line having a part located adjacent to at least one of the first side edge, the second side edge and the third side edge of said TFT substrate;
a sealing material provided between said TFT substrate and said counter substrate; and
a weakly conductive material applied to the first side edge, the second side edge, and the third side edge of said TFT substrate and said counter substrate of said liquid crystal panel,
wherein said weakly conductive material is provided on an outer side of said sealing material, and
wherein said weakly conductive material is not applied to the fourth side edge of said TFT substrate and said counter substrate of said liquid crystal panel, and
wherein said weakly conductive material covers the part of the bus line.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. In a hand held radio communications device having an antenna, the improvement including shielding for the antenna only on the side of the device facing the user.
2. The device of claim 1 wherein said shielding is an arcuate EM radiation conducting material extending over an arc of approximately sixty degrees.
3. The device of claim 1 wherein both said antenna and shielding telescopes within the housing of the device.
4. In a hand held radio communications device having an antenna internal of a housing having a face plate which contains dialing push buttons, the improvement wherein the composition of the face plate includes radiation adsorbing material to thereby provide shielding for the antenna on the side of the device facing the user thereof.
5. In a hand held radio communications device having an antenna, the improvement wherein said housing is covered by a layer of radiation adsorbing material to thereby provide shielding for the user on at least the side of the device facing the user when in normal use.
6. A head covering for the user of a hand held radiation device, said head covering including radiation absorbing material to thereby protect the user of a hand held communications device from electromagnetic radiation emanating form the device and its associated equipment.
7. The head covering of claim 6 wherein said head covering is a baseball cap and wherein said radiation absorbing material is a liner comprising a woven fabric with electrically conductive components woven therein.
8. Eye glasses for the user of a hand held radiation device, the frames of said eye glasses including radiation absorbing material to thereby reduce the exposure of the user of a hand held communications device from electromagnetic radiation emanating from the device and its associated equipment.
9. In a hand held communication device, the improvement wherein the antenna is embedded within the device housing and shielded on the side of the device facing the user thereof when the device is in use.