1460725903-1de43093-4686-4adf-8adf-55591145994a

1. A method of controlling a memory cell comprising:
providing a controllably conductive media between a first electrode and at least a second electrode, the controllably conductive media comprising at least one active layer having a breakdown voltage and at least one passive layer comprising super ionic material;
doping the active layer; and
altering a state of the memory cell by changing the breakdown voltage of the at least one active layer from a first value to a second value, each value is associated with a different state of the memory cell.
2. The method of claim 1, wherein doping the active layer further comprises:
applying an external stimuli having a first polarity;
causing dopant to move from the passive layer to the active layer;
reducing the breakdown voltage of the active layer;
placing the memory cell in a program state.
3. The method of claim 2, further comprising:
applying an external stimuli having a second polarity and a magnitude slightly larger than the reduced breakdown voltage; and
placing the memory cell in a read state.
4. The method of claim 2, further comprising:
applying an external stimuli having a second polarity;
de-doping the active layer; and
placing the memory cell in an erase state.
5. The method of claim 4, wherein de-doping the active layer comprises causing the dopant to move from the active layer to the passive layer.
6. The method of claim 1, the breakdown voltage is determined by the doping level of the active layer.
7. The method of claim 6, the doping level determines the electrical characteristics of the memory cell.
8. The method of claim 1, wherein the super ionic material is selected from the group consisting of Cu2S, CuS, Ag2S, CuO, Cu2O, Cu2Se, Ag2Se and TiSe2.
9. The method of claim 1, the active layer has operating characteristics of a Zener diode.
10. The method of claim 1, wherein the active layer comprises one of an organic semiconductor material, an inorganic semiconductor material and a mixture of organic and inorganic semiconductor material.
11. The method of claim 1, wherein the passive layer comprises at least one conductivity facilitating compound.
12. A method of controlling a memory cell, comprising:
providing a first electrode and at least a second electrode;
placing a controllably conductive media between the first electrode and the at least a second electrode, the controllably conductive media comprises a super ionic layer and an active layer having a first breakdown voltage level and at least a second breakdown voltage level, and
selectively modifying a value of an applied external stimuli between the first breakdown voltage level and at least the second breakdown voltage level to change the electrical characteristics of the memory cell, wherein each breakdown voltage level corresponds to a different state of the memory cell.
13. The method of claim 12, modifying the value of the external stimuli from the first breakdown voltage level to the at least a second breakdown voltage level erases the memory cell.
14. The method of claim 12, modifying the value of the external stimuli from the at least a second breakdown voltage level to a value slightly above the first breakdown voltage level programs the memory cell.
15. The method of claim 12, further comprising selecting a material of the active layer from at least one of an organic semiconductor material, an inorganic semiconductor material or a mixture of organic and inorganic semiconductor material.
16. The method of claim 12, further comprising selecting a material of the superior ionic material from the group consisting of Cu2S, CuS, Ag2S, CuO, Cu2O, Cu2Se, Ag2Se and TiSe2.
17. The method of claim 12, selectively modifying the value of the external stimuli from the first breakdown voltage level to the at least a second breakdown voltage level causes a traveling erase voltage to provide a relatively fast erase of the memory cell.
18. The method of claim 12, further comprising selectively changing the controllably conductive media to at least one of conductive, semiconductive, or nonconductive in a controllable manner with the applied external stimuli.
19. The method of claim 12, applying the external stimuli in a first direction causes doping of the active layer, placing the memory cell in a programming state.
20. The method of claim 19, applying the external stimuli in a second direction causes de-doping of the active layer, placing the memory cell in an erase state.
21. A computer that employs the method of claim 12.
22. A hand-held electronic device that employs the method of claim 12.
23. A memory device comprising an array of the memory cells that employ the method of claim 12.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A vehicle control apparatus equipped with an engine and an automatic transmission comprising:
a fuel cut control means that stops fuel injection into the engine on condition that the vehicle is decelerating and engine revolutions are not less than fuel cut reset revolutions, and resumes fuel injection into the engine when the engine revolutions have decreased to the fuel cut reset revolutions; and
downshift control means that executes downshifting of the automatic transmission during fuel cut control by the fuel cut control means; and
wherein the fuel cut reset revolutions are lowered when executing downshift control during the fuel cut control and when the engine revolutions have decreased to the fuel cut reset revolutions when executing the downshift control during the fuel cut control, a gearshift point for next downshift control during the fuel cut control is changed to a higher vehicle speed side, and the fuel cut control is maintained in the next downshift control during the fuel cut control.
2. The vehicle control apparatus according to claim 1, comprising:
a lockup clutch that directly connects the engine and the automatic transmission; and
a deceleration lockup slippage control means that performs slippage control on the lockup clutch during the fuel cut control,
wherein the fuel cut reset revolutions are changed to a lower side so as to maintain the fuel cut control and deceleration lockup slippage control when executing the downshift control during the fuel cut control.
3. A vehicle control apparatus equipped with an engine and an automatic transmission comprising:
a fuel cut control means that stops fuel injection into the engine on condition that the vehicle is decelerating and engine revolutions are not less than fuel cut reset revolutions, and resumes fuel injection into the engine when the engine revolutions have decreased to the fuel cut reset revolutions; and
downshift control means that executes downshifting of the automatic transmission during fuel cat control by the fuel cut control means,
wherein the fuel cut reset revolutions are lowered when executing downshift control during the fuel cut control and when the engine revolutions have a margin with respect to the fuel cut reset revolutions when executing the downshift control during the fuel cut control, a gearshift point for next downshift control during the fuel cut control is changed to a lower vehicle speed side, and the fuel cut control is maintained in the next downshift control during the fuel cut control.
4. The vehicle control apparatus according to claim 3, comprising:
a lockup clutch that directly connects the engine and the automatic transmission; and
a deceleration lockup slippage control means that performs slippage control on the lockup clutch during the fuel cut control,
wherein the fuel cut reset revolutions are changed to a lower side so as to maintain the fuel cut control and deceleration lookup slippage control when executing the downshift control during the fuel cut control.
5. A vehicle control apparatus equipped with an engine and an automatic transmission comprising:
a fuel cut control means that stops fuel injection into the engine on condition that the vehicle is decelerating and engine revolutions are not less than fuel cut reset revolutions, and resumes fuel injection into the engine when the engine revolutions have decreased to the fuel cut reset revolutions; and
a downshift control means that executes downshifting of the automatic transmission during fuel cut control by the fuel cut control means,
wherein the fuel cut reset revolutions are lowered when executing downshift control during the fuel cut control and when the engine revolutions have decreased to the fuel cut reset revolutions when executing the downshift control during the fuel cut control, a control timing of a release-side oil pressure of a hydraulic type frictionally engaging apparatus of the automatic transmission is delayed when next downshift control during fuel cut control is performed, and the fuel cut control is maintained in the next downshift control during the fuel cut control.
6. The vehicle control apparatus according to claim 5, comprising:
a lockup clutch that directly connects the engine and the automatic transmission; and
a deceleration lockup slippage control means that performs slippage control on the lockup clutch during the fuel cut control,
wherein the fuel cut reset revolutions are changed to a lower side so as to maintain the fuel cut control and deceleration lockup slippage control when executing the downshift control during the fuel cut control.