What is claimed is:
1. A determination device for a semiconductor integrated device comprising:
laser irradiation means for irradiating a PN junction of a semiconductor integrated device with a laser beam in an arbitrary cycle, and
detection means for detecting power supply current flowing through said semiconductor integrated device not being irradiated with said laser beam and current obtained by superposing power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and photoelectric current.
2. The determination device for a semiconductor integrated device as set forth in claim 1, further comprising
operation means for operating a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
3. The determination device for a semiconductor integrated device as set forth in claim 2, further comprising
display means for displaying a graph plotting said operated first coefficient and second coefficient.
4. The determination device for a semiconductor integrated device as set forth in claim 1, further comprising
display means for displaying a difference between the power supply current waveform of said semiconductor integrated device not being irradiated with said laser beam and the current waveform obtained by superposing the power supply current of said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
5. The determination device for a semiconductor integrated device as set forth in claim 1, further comprising:
operation means for operating a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with the laser beam and the photoelectric current,
display means for displaying a graph plotting said operated first coefficient and second coefficient, and
display means for displaying a difference between the power supply current waveform of said semiconductor integrated device not being irradiated with said laser beam and the current waveform obtained by superposing the power supply current of said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
6. The determination device for a semiconductor integrated device as set forth in claim 1, wherein
said laser beam irradiation means simultaneously irradiates PN junctions at a plurality of positions of said semiconductor integrated device in different cycles and said detection means conducts said detection with respect to each position.
7. The determination device for a semiconductor integrated device as set forth in claim 1, wherein
said semiconductor integrated device has a large amount of through current flowing in the normal state.
8. A method of determining a semiconductor integrated device comprising the steps of:
a laser irradiation step of irradiating a PN junction of a semiconductor integrated device with a laser beam in an arbitrary cycle, and
a detection step of detecting power supply current flowing through said semiconductor integrated device not being irradiated with said laser beam and current obtained by superposing power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and photoelectric current.
9. The method of determining a semiconductor integrated device as set forth in claim 8, further comprising
an operation step of operating a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
10. The method of determining a semiconductor integrated device as set forth in claim 8, wherein
at said laser beam irradiation step, PN junctions at a plurality of positions of said semiconductor integrated device are simultaneously irradiated in different cycles and at said detection step, said detection is conducted with respect to each position.
11. A computer readable memory storing a determination program for controlling a computer to make determination of a semiconductor integrated device,
said determination program comprising the functions of:
irradiating a PN junction of a semiconductor integrated device with a laser beam in an arbitrary cycle, and
detecting power supply current flowing through said semiconductor integrated device not being irradiated with said laser beam and current obtained by superposing power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and photoelectric current.
12. The computer readable memory storing a determination program for making determination of a semiconductor integrated device as set forth in claim 11,
said determination program further comprising
operating a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
13. The computer readable memory storing a determination program for making determination of a semiconductor integrated device as set forth in claim 11, wherein
in said determination program,
at said laser beam irradiation function, PN junctions at a plurality of positions of said semiconductor integrated device are simultaneously irradiated in different cycles and at said detection step, said detection is conducted with respect to each position.
14. A determination device for a semiconductor integrated device comprising:
laser irradiation unit which irradiates a PN junction of a semiconductor integrated device with a laser beam in an arbitrary cycle, and
detection unit which detects power supply current flowing through said semiconductor integrated device not being irradiated with said laser beam and current obtained by superposing power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and photoelectric current.
15. The determination device for a semiconductor integrated device as set forth in claim 14, further comprising
operation unit which operates a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
16. The determination device for a semiconductor integrated device as set forth in claim 15, further comprising
display unit which displays a graph plotting said operated first coefficient and second coefficient.
17. The determination device for a semiconductor integrated device as set forth in claim 14, further comprising
display unit which displays a difference between the power supply current waveform of said semiconductor integrated device not being irradiated with said laser beam and the current waveform obtained by superposing the power supply current of said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
18. The determination device for a semiconductor integrated device as set forth in claim 14, further comprising:
operation unit which operates a first coefficient obtained by Fourier transform of a waveform of said detected power supply current flowing through said semiconductor integrated device not being irradiated with the laser beam and a second coefficient obtained by Fourier transform of a waveform of the current obtained by superposing the power supply current flowing through said semiconductor integrated device being irradiated with the laser beam and the photoelectric current,
display unit which displays a graph plotting said operated first coefficient and second coefficient, and
display unit which displays a difference between the power supply current waveform of said semiconductor integrated device not being irradiated with said laser beam and the current waveform obtained by superposing the power supply current of said semiconductor integrated device being irradiated with said laser beam and the photoelectric current.
19. The determination device for a semiconductor integrated device as set forth in claim 14, wherein
said laser beam irradiation unit simultaneously irradiates PN junctions at a plurality of positions of said semiconductor integrated device in different cycles and said detection unit conducts said detection with respect to each position.
20. The determination device for a semiconductor integrated device as set forth in claim 14, wherein
said semiconductor integrated device has a large amount of through current flowing in the normal state.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A base material for a pattern-forming material, comprising a low molecular weight compound (X1), which is formed from a polyhydric phenol compound (x) that comprises two or more phenolic hydroxyl groups and satisfies conditions (1), (2), and (3) described below, wherein either a portion of, or all of, said phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups:
(1) a molecular weight within a range from 300 to 2,500, (2) a molecular weight dispersity of no more than 1.5, and (3) an ability to form an amorphous film using a spin coating method.
2. A base material for a pattern-forming material according to claim 1, wherein said polyhydric phenol compound (x) is one or more compounds selected from the group consisting of polyhydric phenol compounds represented by general formulas (I), (II), and (III) shown below:
wherein, R11 through R17 each represent, independently, an alkyl group or aromatic hydrocarbon group of 1 to 10 carbon atoms, and these structures may also include a hetero atom; g and j each represent, independently, an integer of 1 or greater, k and q each represent either 0 or an integer of 1 or greater, and g+j+k+q is no greater than 5; h is an integer of 1 or greater, l and m each represent, independently, either 0 or an integer of 1 or greater, and h+l+m is no greater than 4; i is an integer of 1 or greater, n and o each represent, independently, either 0 or an integer of 1 or greater, and i+n+o is no greater than 4; and p is either 0 or 1,
wherein, R21 through R26 each represent, independently, an alkyl group or aromatic hydrocarbon group of 1 to 10 carbon atoms, and these structures may also include a hetero atom; d and g each represent, independently, an integer of 1 or greater, h represents either 0 or an integer of 1 or greater, and d+g+h is no greater than 5; e represents an integer of 1 or greater, i and j each represent, independently, either 0 or an integer of 1 or greater, and e+i+j is no greater than 4; f and k each represent, independently, an integer of 1 or greater, l represents either 0 or an integer of 1 or greater, and f+k+l is no greater than 5; and m is an integer from 1 to 20,
wherein, R31 through R38 each represent, independently, an alkyl group or aromatic hydrocarbon group of 1 to 10 carbon atoms, and these structures may also include a hetero atom; a and e each represent, independently, an integer of 1 or greater, f represents either 0 or an integer of 1 or greater, and a+e+f is no greater than 5; b and h each represent, independently, an integer of 1 or greater, g represents either 0 or an integer of 1 or greater, and b+h+g is no greater than 5; c and i each represent, independently, an integer of 1 or greater, j represents either 0 or an integer of 1 or greater, and c+i+j is no greater than 5; d represents an integer of 1 or greater, k and l each represent, independently, either 0 or an integer of 1 or greater, and d+k+l is no greater than 3.
3. A positive resist composition, comprising a base material component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under action of acid, and (B) an acid generator that generates acid on exposure, wherein
said base material component (A) is a base material for a pattern-forming material according to claim 1.
4. A positive resist composition, comprising a base material component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under action of acid, and (B) an acid generator that generates acid on exposure, wherein
said base material component (A) is a base material for a pattern-forming material according to claim 2.
5. A positive resist composition according to claim 3, further comprising a nitrogen-containing organic compound (D).
6. A method of forming a resist pattern comprising the steps of applying a positive resist composition according to claim 3 to a substrate, conducting a prebake, performing selective exposure, conducting PEB (post exposure baking), and performing alkali developing to form a resist pattern.
7. A method of forming a resist pattern comprising the steps of applying a positive resist composition according to claim 4 to a substrate, conducting a prebake, performing selective exposure, conducting PEB (post exposure baking), and performing alkali developing to form a resist pattern.
8. A base material for a pattern-forming material, comprising a protected material (Y1), which is formed from a polyhydric phenol compound (y) that comprises two or more phenolic hydroxyl groups and has a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, said phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups, wherein a proportion within said base material of an unprotected material (Y2), in which said phenolic hydroxyl groups of said polyhydric phenol compound (y) are not protected with acid dissociable, dissolution inhibiting groups, is no more than 60% by weight.
9. A base material for a pattern-forming material according to claim 8, wherein a molecular weight dispersity (MwMn) of said polyhydric phenol compound (y) is no more than 1.5.
10. A base material for a pattern-forming material according to claim 8, wherein said polyhydric phenol compound (y) is a compound represented by a general formula (I) shown below:
wherein, R1 through R6 each represent, independently, an alkyl group or aromatic hydrocarbon group of 1 to 10 carbon atoms, and these structures may also include a hetero atom; g and j each represent, independently, an integer of 1 or greater, k represents either 0 or an integer of 1 or greater, and g+j+k is no greater than 5; h is an integer of 1 or greater, l and m each represent, independently, either 0 or an integer of 1 or greater, and h+l+m is no greater than 4; i is an integer of 1 or greater, n and o each represent, independently, either 0 or an integer of 1 or greater, and i+n+o is no greater than 4; and p is either 0 or 1.
11. A positive resist composition, comprising a base material component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under action of acid, and (B) an acid generator that generates acid on exposure, wherein
said base material component (A) is a base material for a pattern-forming material according to claim 8.
12. A positive resist composition, comprising a base material component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under action of acid, and (B) an acid generator that generates acid on exposure, wherein
said base material component (A) is a base material for a pattern-forming material according to claim 10.
13. A positive resist composition according to claim 11, further comprising a nitrogen-containing organic compound (D).
14. A method of forming a resist pattern comprising the steps of applying a positive resist composition according to claim 11 to a substrate, conducting a prebake, performing selective exposure, conducting PEB (post exposure baking), and performing alkali developing to form a resist pattern.
15. A method of forming a resist pattern comprising the steps of applying a positive resist composition according to claim 12 to a substrate, conducting a prebake, performing selective exposure, conducting PEB (post exposure baking), and performing alkali developing to form a resist pattern.