What is claimed is:
1. A method of reducing the conductivity of a layer of semiconductor doped with Tin (Sn) comprising the steps of:
(a) forming a region of SiO2 on said semiconductor layer; and
(b) annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2.
2. The method of claim 1 wherein the annealing step occurs at a temperature sufficiently low and for a period of time sufficiently short to inhibit significant intermixing between the region of SiO2 and the semiconductor layer.
3. The method of claim 1 wherein the region of SiO2 is smaller in area than is the semiconductor layer so that after the annealing steps a region is defined in said SiO2 layer having a reduced concentration of Sn dopant compared to other portions of said semiconductor layer.
4. The method of claim 3 wherein the annealing step occurs at a temperature of approximately 600 C.
5. The method of claim 4 wherein the anneal time of the annealing step is approximately 10 minutes.
6. The method of claim 1 wherein the semiconductor layer is a selected one of Indium Phosphide (InP), Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs).
7. The method of claim 1 wherein the annealing step occurs at a temperature of approximately 600 C.
8. The method of claim 1 further including removing the region of SiO2 after the annealing step is performed.
9. The method of claim 7 wherein the anneal time of the annealing step is approximately 10 minutes.
10. A method of reducing the conductivity of a layer of a group III-V semiconductor doped with a group IV semiconductor, the group III, IV and V semiconductors each having an atomic number with the atomic number of the group IV semiconductor being larger than the atomic numbers of each of the group III and group V semiconductors, said method comprising the steps of:
(a) forming a region of SiO2 on said group III-V semiconductor layer; and
(b) annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the group IV semiconductor to leach from the semiconductor layer into the region of SiO2.
11. The method of claim 10 further including removing the region of SiO2 after the annealing step is performed.
12. The method of claim 11 wherein the group III-V semiconductor is selected from semiconductor materials including Indium Phosphide (InP), Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) and the group IV semiconductor is Tin (Sn).
13. The method of claim 10 wherein the group III-V semiconductor is selected from semiconductor materials including Indium Phosphide (InP), Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) and the group IV semiconductor is Tin (Sn).
14. A method of forming a gate region of a semiconductor device comprising the steps of:
(a) forming a layer of semiconductor doped with Sn;
(b) forming a region of SiO2 on said semiconductor layer, the region of SiO2 corresponding to said gate region;
(c) annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2 and to thereby form a region in said SiO2 layer having a reduced concentration of Sn dopant, the annealing step occurring at a temperature sufficiently low and for a period of time sufficiently short to inhibit significant intermixing between the region of SiO2 and the semiconductor layer;
(d) removing the region of SiO2 after the annealing step is performed; and
(e) forming a gate electrode on said semiconductor layer.
15. The method of claim 14 wherein the annealing step occurs at a temperature of approximately 600 C.
16. The method of claim 15 wherein the anneal time of the annealing step is approximately 10 minutes.
17. The method of claim 14 further including the step of etching a channel in the region in said SiO2 layer having the reduced concentration of Sn dopant.
18. A method of reducing base-collector capacitance of a semiconductor device having a layer of a group III-V semiconductor which is doped with a group IV semiconductor, said method comprising the steps of:
(a) forming a region of SiO2 on said group III-V semiconductor layer;
(b) annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the group IV semiconductor to leach from at least a region of the group III-V semiconductor layer into the region of SiO2;
(c) removing the region of SiO2 after the annealing step is performed; and
(d) forming semiconductor layers defining a collector region and defining a base region over the region of the group III-V semiconductor layer from which the IV semiconductor was leached.
19. The method of claim 18 wherein the group III-V semiconductor is selected from semiconductor materials including Indium Phosphide (InP), Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) and the group IV semiconductor is Tin (Sn).
20. A method of making a HEMT device comprising the steps of:
(a) forming a device channel on a substrate;
(b) forming a cap layer of a group III-V semiconductor which is doped with a group IV semiconductor over said device channel;
(c) forming a region of SiO2 on said group III-V semiconductor cap layer;
(d) annealing the semiconductor cap layer and the region of SiO2 formed thereon at a temperature sufficiently high to cause atoms of the group IV semiconductor to leach from at least a region of the group III-V semiconductor cap layer into the region of SiO2;
(e) forming self-aligned, regrowth contacts adjacent said semiconductor cap layer and adjacent the region of SiO2;
(f) partially etching the region of SiO2 after the regrowth contacts are formed;
(g) forming and patterning an insulating layer over the regrowth contacts and over exposed portions of the group III-V semiconductor cap layer;
(h) removing the partially etched region of SiO2 after forming the insulating layer; and
(i) forming metal contacts for the group III-V semiconductor cap layer and for the regrowth contacts.
21. The method of claim 20 wherein the group III-V semiconductor is Indium Phosphide (InP) or Indium Gallium Arsenide (InGaAs) or Gallium Arsenide (GaAs) and the group IV semiconductor is Tin (Sn).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for installation of an elevator, the method comprising:
moving, without use of a worksite crane, a first platform of the elevator and a separate first support structure by a plurality of jump-lifts in progressive steps upwards in an elevator hoistway, the first platform including at least machinery for moving an elevator car during the installation of the elevator; and
utilizing at least a movable support structure of the first platform to form a final support structure supporting the machinery in a final machine room of the elevator after completion of a final jump-lift among the plurality of jump-lifts, wherein
the first platform is positioned below the separate first support structure in the elevator hoistway,
the separate first support structure supports the first platform during the installation of the elevator,
the separate first support structure is positioned below a separate second support structure in the elevator hoistway, and
the separate second support structure supports the separate first support structure via a hoisting device and a rope or cable during the installation of the elevator.
2. The method according to claim 1, further comprising:
transferring, via the final jump-lift, the machinery from a position in the elevator hoistway into a space reserved for the final machine room.
3. The method according to claim 2, wherein the transferring comprises:
lifting the movable support structure through an aperture leading into the space reserved for the final machine room; and
lowering the movable support structure onto load-bearing structures of a building.
4. The method according to claim 3, wherein the load-bearing structures include at least one of,
a part of a floor of the space reserved for the final machine room,
a third support structure supported on the floor, or
a wall structure of a top part of the elevator hoistway.
5. The method according to claim 3, further comprising:
removing, prior to the lifting of the movable support structure, at least one of
at least a part of the hoisting device,
at least a part of a frame of the first platform supporting the machinery,
a working platform above the machinery,
buffers, or
the separate first support structure.
6. The method according to claim 2, after transferring the machinery into the space reserved for the final machine room, the method further includes
supporting the first platform in position in the final machine room, wherein
in the final machine room, the machinery is at least partly supported by the movable support structure.
7. The method according to claim 2, wherein:
the space reserved for the final machine room includes a floor; and
the space reserved for the final machine room is wider than the elevator hoistway in at least one lateral direction.
8. The method according to claim 1, further comprising:
transferring, while being supported by the first platform, the machinery into a space reserved for the final machine room of the elevator by lifting the movable support structure through an aperture leading into the space while the movable support structure is in a contracted position;
extending the movable support structure into an extended position in which the movable support structure extends over load-bearing structures of a building; and
lowering the movable support structure onto the load-bearing structures of the building.
9. The method according to claim 8, wherein after lowering the movable support structure onto the load-bearing structures of the building, the method further includes,
filling the aperture between the elevator hoistway and the space with casting material.
10. The method according to claim 9, wherein the filling comprises:
casting the casting material onto a plate placed in the aperture, a top surface of the plate being below a top surface of a floor of the space reserved for the final machine room.
11. The method according to claim 9, further comprising:
casting a platform having a top surface on substantially the same level as a top surface of a floor of the final machine room.
12. The method according to claim 8, wherein, in the extended position, the movable support structure extends over a load-bearing structure of the building on at least two opposite sides of the aperture.
13. The method according to claim 1, further comprising:
lifting the separate first support structure with the hoisting device, which takes a vertical support force needed for lifting from a structure of a space reserved for the final machine room of the elevator, such that the support force is taken from a position higher than a level of a top surface of a floor of the space reserved for the final machine room.
14. The method of claim 13, wherein the vertical support force is taken from at least one of,
a roof of the space reserved for the final machine room,
walls of the space reserved for the final machine room, or
an additional support structure arranged in the space reserved for the final machine room, the additional support structure being supported by the floor of the space reserved for the final machine room.
15. The method according to claim 1, further comprising:
utilizing the machinery to move the elevator car and serve passengers during the installation of the elevator and while the machinery is positioned lower in the elevator hoistway relative to the separate first support structure.
16. The method according to claim 1, further comprising:
serving passengers using the elevator before reaching a final lifting height of the elevator; and
transferring the machinery into a space reserved for the final machine room of the elevator when the first platform reaches an upper part of the elevator hoistway, the space reserved for the final machine room of the elevator being an extension of the elevator hoistway, and being above the upper part of the elevator hoistway.
17. The method according to claim 1, wherein the utilizing comprises:
forming the final support structure supporting the machinery in the final machine room of the elevator at least partly from the movable support structure of the first platform such that a space above the movable support structure is the final machine room, and the elevator hoistway is below the movable support structure.
18. The method according to claim 1, further comprising:
supporting, after each of the plurality of jump-lifts, the first platform in position in the elevator hoistway by extending the movable support structure to rest on a top surface of a load-bearing structure of a building on at least two opposite sides of the elevator hoistway.
19. The method according to claim 1, wherein the machinery used to move the elevator car during the installation of the elevator between the plurality of jump-lifts is used as the machinery for moving the elevator car of the elevator after installation of the elevator is complete.
20. The method according to claim 9, wherein the filling comprises:
forming at least part of a roof structure of the elevator hoistway.
21. A method for installation of an elevator, the method comprising:
moving, without use of a worksite crane, a first platform of the elevator by a plurality of jump-lifts in progressive steps upwards in an elevator hoistway, the first platform including at least machinery for moving an elevator car during the installation of the elevator;
removing at least a part of a frame of the first platform, to decrease a total height of the first platform, the part of the frame of the first platform including at least a part of the frame of the first platform positioned above the machinery;
transferring, via a final jump-lift among the plurality of jump-lifts, the machinery from a position in the elevator hoistway into a space reserved for a final machine room of the elevator; and
utilizing at least a support structure of the first platform to form a final support structure supporting the machinery in the final machine room after completion of the final jump-lift among the plurality of jump-lifts, the first platform having been positioned lower in the elevator hoistway relative to a separate movable support structure supporting the first platform during the installation of the elevator.