1460707012-81bccde7-c06c-45ec-8654-5dc568ad83da

1. A method of packaging a semiconductor comprising:
electrically coupling a contact on a first surface of each of a plurality of die to a respective first one of a plurality of leads of a lower lead frame, wherein the plurality of leads of the lower lead frame are coupled together by one or more tie bars of the lower lead frame;
bending opposite edges of each corresponding set of two or more leads of a plurality of leads of an upper lead frame while the adjacent edges of each corresponding set of two or more leads are coupled together by one or more tie bars of the upper lead frame, wherein each of the plurality of leads is bent into an L-shape, wherein the bent opposite edges of each corresponding set of leads of the upper lead frame support the upper lead frame from the lower lead frame at a desired position with respect to the plurality of die, and wherein the plurality of leads of the upper lead frame are coupled together by one or more additional tie bars of the upper lead frame; and
electrically coupling the leads of the upper lead frame between respective contacts on a second surface of each respective die and a respective second one of the plurality of leads of the lower lead frame.
2. The method according to claim 1, further comprising:
encapsulating the plurality of die, at least a portion the upper lead frame and a portion of the lower lead frame after the lower lead frame and upper lead frames have been electrically coupled to the plurality of die; and
singulating the die into packaged semiconductors after encapsulation.
3. The method according to claim 2, wherein singulating the die comprises cutting through the encapsulant, the tie bars coupling the leads of the lower lead frame, and the tie bars coupling the leads of the upper lead frame to separate the plurality of die into the packaged semiconductors.
4. The method according to claim 2, wherein the leads of the upper lead frame are electrically coupled at a cavity of the respective second one of the plurality of leads of the lower lead frame.
5. The method according to claim 2, wherein the leads of the upper lead frame are electrically coupled to the contacts on the second surface of each respective die proximate one or more grooves in the leads of the upper lead frame.
6. The method according to claim 1, wherein:
surface of each of the plurality of die to the respective first one of the plurality of leads of the lower lead frame comprises reflowing solder applied between the first surface of each of the plurality of dies and the respective first one of the plurality of leads of the lower lead frame; and
electrically coupling the leads of the upper lead frame between respective contacts on the second surface of each respective die and the respective second one of the plurality of leads of the lower lead frame comprises reflowing solder applied between the leads of the upper lead frame and the second surface of each respective die and the respective second one of the plurality of leads of the lower lead frame.
7. The method according to claim 6, wherein a ratio of a thickness of the solder coupling the upper lead frame to the die and the thickness of the solder layer coupling the lower lead frame to the die is regulated to provide a desired position of the plurality of die between the lower lead frame and upper lead frame.
8. The method according to claim 1, wherein:
each of the first one of the plurality of lower leads of the lower lead frame is electrically coupled to a respective gate of the plurality of die;
each of the upper lead of the upper lead frame is electrically coupled to a respective drain of the plurality of die;
each of the second lower lead of the lower lead frame is electrically coupled to the respective drain of the plurality of die through the respective upper lead; and
each of a third lower lead of the lower lead frame is electrically coupled to a respective source of the plurality of die.
9. The method according to claim 1, wherein the upper leads of the upper lead frame are not coupled to another lower lead of the lower lead frame.
10. The method according to claim 1, wherein the contact on the first surface of the plurality of die are electrically coupled at a mesa portion of the respective first one of the plurality of leads of the lower lead frame.
11. A method of packaging a semiconductor comprising:
electrically coupling a contact on a first surface of each of a plurality of die to a respective first one of a plurality of leads of a lower lead frame, wherein the plurality of leads of the lower lead frame are coupled together by one or more tie bars;
forming oppositely disposed sets of two L-shaped leads in an upper lead frame such that bent edges of each set of two L-shaped leads are opposite each other, wherein the L-shaped leads of the upper lead frame are coupled together by one or more tie bars; and
electrically coupling the L-shaped leads of the upper lead frame between respective contacts on a second surface of each respective die and a respective second one of the plurality of leads of the lower lead frame.
12. The method according to claim 11, wherein the upper leads of the upper lead frame are not coupled to another lower lead of the lower lead frame.
13. The method according to claim 11, further comprising:
encapsulating the plurality of die, at least a portion the upper lead frame and a portion of the lower lead frame after the lower lead frame and upper lead frames have been electrically coupled to the plurality of die; and
cutting through the encapsulant, the tie bars coupling the leads of the lower lead frame, and the tier bars coupling the leads of the upper lead frame to separate the plurality of die into packaged semiconductors.
14. The method according to claim 13, further comprising cutting through the encapsulant, the tie bars coupling the leads of the lower lead frame, and the tier bars coupling the leads of the upper lead frame in multiple patterns to produce multiple different lead layouts.
15. The method according to claim 11, wherein:
electrically coupling the contacts on the first surface of each of the plurality of die to the respective first one of the plurality of leads of the lower lead frame comprises reflowing solder applied between the first surface of each of the plurality of dies and the respective first one of the plurality of leads of the lower lead frame; and
electrically coupling the leads of the upper lead frame between respective contacts on the second surface of each respective die and the respective second one of the plurality of leads of the lower lead frame comprises reflowing solder applied between the leads of the upper lead frame and the second surface of each respective die and the respective second one of the plurality of leads of the lower lead frame.
16. The method according to claim 15, wherein a ratio of a thickness of the solder coupling the upper lead frame to the die and the thickness of the solder layer coupling the lower lead frame to the die is regulated to provide a desired position the plurality of die between the lower lead frame and upper lead frame.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An immersion lithography system, comprising:
an imaging lens having a front surface;
a substrate stage positioned under the front surface of the imaging lens;
an immersion fluid retaining structure having at least one fluid port, configured to hold a fluid from the fluid inlet for at least partially filling a space between the front surface and a substrate on the substrate stage, and receive or dispel the fluid through the fluid port; and
a particle monitor module integrated with the immersion fluid retaining structure.
2. The system of claim 1, wherein the fluid port is a fluid outlet, and the particle monitor module comprises a first liquid particle counter (LPC) coupled to the fluid outlet for monitoring particles in the fluid flowing out the fluid outlet.
3. The system of claim 1, further comprising:
a tank coupled to the fluid port for receiving the fluid;
a first liquid particle counter coupled to the tank for monitoring particles in the received fluid; and
a gas inlet coupled to the tank for supplying gas to the tank.
4. The system of claim 3, wherein the fluid port is a fluid inlet, and the particle monitor module comprises a second liquid particle counter coupled to the fluid inlet for monitoring particles in the fluid coming to the fluid inlet.
5. The system of claim 1, wherein the fluid port comprises a fluid inlet and a fluid outlet, the particle monitor module further comprises a first liquid particle counter and a second liquid particle counter, the fluid outlet is coupled to the first liquid particle counter for monitoring particles in the fluid flowing out the fluid outlet, the fluid inlet is coupled to the second liquid particle counter for monitoring particles in the fluid coming to the fluid inlet.
6. The system of claim 1, further comprising:
a data processing module configured for collecting data from the particle monitor module, analyzing the data for particle result and distributing the particle result.
7. The system of claim 6, wherein the distributing of the particle data comprises sending out warning information.
8. An immersion lithography system, comprising:
an imaging system;
a substrate stage positioned underlying the imaging system;
an immersion fluid retaining structure configured to hold a fluid at least partially filling a space between the imaging system and a substrate on the substrate stage;
a tank coupled to the immersion fluid retaining structure for receiving the fluid;
a liquid particle counter coupled to the tank for monitoring particles in the fluid; and
a gas filter coupled to the tank for providing gas to the tank for use with the liquid particle counter.
9. The system of claim 8, further comprising:
a first valve configured between the tank and the immersion fluid retaining structure;
a second valve configured between the tank and the liquid particle counter; and
a third valve configured between the gas filter and the tank.
10. The system of claim 8, further comprising:
a controller designed for controlling particle monitoring process, colleting particle data from the liquid particle counter, and processing the particle data.
11. A method for immersion photolithography patterning semiconductor integrated circuits, comprising:
flowing an immersion fluid to a space between an imaging lens and a substrate on a substrate stage, through an immersion fluid retaining module; and
monitoring particles in the immersion fluid before flowing into the space or after flowing out from the space.
12. The method of claim 11, wherein monitoring particles in the immersion fluid flowing out from the space utilizes a first liquid particle counter.
13. The method of claim 11, wherein monitoring particles in the immersion fluid before flowing into the space utilizes a second liquid particle counter.
14. The method of claim 11, wherein the monitoring further comprises:
opening a first valve coupled between the tank and an immersion fluid outlet of the immersion fluid retaining module, for filling the immersion fluid into the tank from the space;
closing the first valve after filling the tank with the immersion fluid;
opening a second valve coupled between a gas filter and the tank, for providing a gas to the tank;
maintaining the tank with the immersion fluid for a period of duration; and
opening a third valve coupled between the tank and the first liquid particle counter for flowing the immersion fluid through the first liquid particle counter, and measuring the particle in the immersion fluid.
15. The method of claim 11, further comprising illuminating the imaging lens to perform a lithographic exposing process on the substrate.
16. The method of claim 11, further comprising:
collecting data from the first liquid particle counter;
analyzing the data to provide a particle result; and
distributing the particle result.
17. The method of claim 16, wherein the distributing the particle result comprises providing warning information to a user according to the particle result.
18. The method of claim 16, wherein the collecting data comprises storing the data into a database.