1. A method of building a digital identity, the method comprising:
receiving profile attributes associated with a user;
generating a plurality of digital booklets comprising digital information associated with said attributes;
updating said booklets over time; and
tracking and cataloguing said booklets over time.
2. The method as claimed in claim 1, wherein said method is computer-implemented.
3. The method as claimed in claim 2, wherein said attributes comprise intrinsic attributes that inherently define said user and extrinsic attributes that comprise information about social objects and about relations of said user with said social objects.
4. The method as claimed in claim in 3, wherein said tracking and cataloguing said booklets over time comprises tracking and cataloguing user’s real life experience with said social objects over time through said booklets.
5. The method as claimed in claim 3, wherein said attributes are stored into a first database and said generated digital booklets are stored into a second database.
6. The method as claimed in claim 5, further comprising generating data records associated with said tracking and cataloguing said booklets over time, and storing said data records into a third database.
7. The method as claimed in claim 3, wherein said social objects are related to at least one category of products, animals, things, people, places and interests.
8. The method as claimed in claim 7, wherein said received attributes are in a textual or a multimedia format.
9. The method as claimed in claim 3, wherein said method is implemented on a computer server connected to a social network, said profile attributes are automatically collected from one or more databases independent from said computer server.
10. The method as claimed in claim 9, wherein said generating digital booklets is carried out automatically using predefined booklet generating criteria.
11. The method as claimed in claim 10, wherein said profile attributes comprising intrinsic and extrinsic attributes are stored into a first database, and said digital booklets are generated based on at least one social object among said social objects by extracting information related thereto from said first database.
12. The method as claimed in claim 11, wherein said tracking and cataloguing said booklets over time is carried out automatically using predefined tracking and cataloguing criteria.
13. The method as claimed in claim 12, wherein said tracking and cataloguing criteria is predefined by said user.
14. The method as claimed in claim 3, wherein said method is implemented on a computer server connected to a social network, said profile attributes are transmitted by said user using at least one of a user interface connected to said computer server and a device operating independently of the computer server.
15. The method as claimed in claim 14, further comprising receiving a request from said user for generating said digital booklets, where said request comprises said booklet generating criteria.
16. The method as claimed in claim 15, wherein said booklet generating criteria comprises an identification of at least one social object among said social objects, and said digital booklets are generated based on said at least one social object identified by said user.
17. The method as claimed in claim 16, wherein said updating said booklets over time is carried out by said user.
18. A method of sharing a digital identity the method comprising:
receiving from a first user a request to create at least one digital subset-identity, where each one of said at least one subset-identity is associated with at least one digital booklet containing digital information associated with attributes of said user;
for each one of said at least one subset-identity, setting corresponding privacy rules; and
controlling other users’ access to said at least one subset-identity in accordance with said privacy rules.
19. The method as claimed in claim 18, wherein said method is computer-implemented.
20. The method as claimed in claim 19, wherein said method is implemented over a social network.
21. The method as claimed in claim 20, wherein said corresponding privacy rules comprise access privileges comprising information allowing for identifying users eligible for visualizing said digital information contained in said at least one digital booklet, and said controlling other users’ access to said at least one subset-identity comprises determining users eligible to visualize information contained in said at least one digital booklet and granting said eligible users said access to visualize in accordance with said access privileges.
22. The method as claimed in claim 21, wherein said at least one subset-identity consist of at least two subset-identities, said method further comprising setting hierarchical access rules between said at least two subset-identities for enabling eligible users granted access to a subset-identity of an upper level to be automatically granted access to one or more subset-identities of a lower level, and, if required, automatically granting said eligible users access to said at least two-subset identities in accordance with said hierarchical access rules.
23. The method as claimed in claim 20, wherein said corresponding privacy rules comprise interaction privileges comprising information allowing for identifying users eligible to interact with at least one other eligible user through said at least one digital booklet, and said controlling other users’ access to said at least one subset-identity comprises determining users eligible to interact with at least one other eligible user through said at least one digital booklet and enabling said eligible users to interact with said first user through said at least one digital booklet in accordance with said interaction privileges.
24. The method as claimed in claim 23, wherein said enabling said other users to interact with at least one other eligible user through said at least one digital booklet comprises enabling said other users to use said at least one digital booklet as at least one of a mean of interaction and a subject of discussion.
25. The method as claimed in claim 20, wherein said corresponding privacy rules comprise administration privileges comprising information allowing for identifying users eligible to carry out administration actions in connection with said at least one digital booklet, and said controlling other users’ access to said at least one subset-identity comprises determining users eligible to carry out administration actions in connection with said at least one digital booklet and enabling said eligible users to carry out said administration actions in accordance with said defined administration privileges.
26. The method as claimed in claim 25, wherein said administration actions comprise at least one of updating content of said at least one booklet, editing content of said at least one booklet, setting rules for receiving feeds through said at least one booklet and setting privileges to other users in connection with said at least one booklet.
27. The method as claimed in claim 25, wherein said information allowing for identifying eligible users consist of user selection criteria comprising at least one of a type and a group of eligible users.
28. The method as The method as claimed in claim 25, wherein said information allowing for identifying eligible users consist of predefined identifiers allowing for uniquely identifying said users.
29. The method as claimed in claim 28, wherein said method is implemented on a computer server connected to said social network, and said other users consist of users pre-registered on a database connected to said computer server or on another platform independent of said computer server.
30. The method as claimed in claim 29, wherein said attributes comprise intrinsic attributes that inherently define said user and extrinsic attributes that comprise information about social objects about relations of said user with said social objects.
31. The method as claimed in claim 30, wherein said request is transmitted by said user using at least one of a user interface connected to said computer server and a device operating independently of the computer server.
32. A method of generating a biography, the method comprising:
providing a first database storing data records associated with a plurality of digital booklets comprising digital information associated with attributes of a user, where said data records comprise tracking records of time-based events associated with said digital booklets;
receiving at a computing device connected to said first database a request for generating a biography associated with said user, the request comprising information allowing for determining at least one booklet associated with the request and a time frame to be covered by said biography;
inquiring said first database as a function of said information and retrieving corresponding data records thereof;
organizing events associated with said corresponding data records as a function of time; and
displaying said time-based events in a form of biographical coverage.
33. The method as claimed in claim 32, wherein said method is computer-implemented.
34. The method as claimed in claim 33, wherein said attributes comprise intrinsic attributes that inherently define said user and extrinsic attributes that comprise information about social objects and about relations of said user with said social objects.
35. The method as claimed in claim 34, wherein said biography associated with a user consist of a biography associated with a social object among said social objects of said user.
36. A system for building a digital identity of a user, the system comprising:
a first module for receiving profile attributes associated with said user;
a first database for storing said attributes;
a second module for generating a plurality of digital booklets comprising digital information associated with said attributes;
a second database for storing said generated booklets;
a third module for updating said booklets over time;
a fourth module for tracking and cataloguing said booklets over time and for generating data records associated therewith; and
a third database for storing said generated data records.
37. The system as claimed in claim 35, further comprising a user interface adapted to be connected to said first module for enabling said user to manually upload said profile attributes.
38. The system as claimed in claim 36, wherein said user interface comprises features for enabling said user to define booklet generating criteria, wherein said generating a plurality of digital booklets is carried out as a function of said defined booklet generating criteria.
39. The system as claimed in claim 35, further comprising a fifth module adapted to be connected to said first module for automatically collecting said profile attributes from a remote device through a data network.
40. A system for sharing a digital identity, the system comprising:
a first module for receiving from a user a request to create at least one digital subset-identity;
a second module for associating each one of said at least one subset-identity with at least one digital booklet stored in a first database, said at least one digital booklet containing digital information associated with attributes of said user;
a second database for storing data records about said at least one subset-identity;
a third module for setting, for each one of said at least one subset-identity, corresponding privacy rules;
a third database for storing data records about said privacy rules;
a fourth module adapted to be connected to a social network and to said first, second and third databases for controlling other users’ access to said at least one subset-identity in accordance with said privacy rules.
41. The system as claimed in claim 40, further comprising a user interface adapted to be connected to said first module for enabling said user to define manually said request.
42. The system as claimed in claim 41, wherein said user interface is further connected to said third module for enabling said user to set manually said privacy rules.
43. A system for generating a biography associated with a user, the system comprising:
a database storing data records associated with a plurality of digital booklets comprising digital information associated with attributes of a user, where said data records comprise tracking records of time-based events associated with said digital booklets;
a first module for receiving a request for generating a biography associated with a user, the request comprising information allowing for determining at least one booklet associated with the request and a time frame to be covered by said biography;
a second module for inquiring said first database as a function of said information and retrieving corresponding data records thereof;
a third module for generating said biography, where said generating comprises organizing events associated with said corresponding data records as a function of time; and
a fourth module for displaying said time-based events in a form of biographical coverage.
44. The system as claimed in claim 43, further comprising a user interface for enabling users to define said request for generating a biography.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A debris removal system for the removal of plasma produced residue debris on a reflecting surface of an EUV collector in an EUV light source, wherein the reflecting surface comprises a first material and the residue debris comprises a second material comprising:
a controlled sputtering ion source comprising:
a gas comprising the atoms of the sputtering ion material;
a stimulating mechanism exciting the atoms the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material.
2. The apparatus of claim 1 further comprising:
the stimulating mechanism is an RF or microwave induction mechanism.
3. The apparatus of claim 2 further comprising;
the gas is maintained at a pressure that in part determines the selected energy peak.
4. The apparatus of claim 3 further comprising:
the stimulating mechanism creates an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material.
5. The apparatus of claim 4 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
6. The apparatus of claim 5 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
7. The apparatus of claim 6, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
8. The apparatus of claim 4 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
9. The apparatus of claim 8 further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
10. The apparatus of claim 4 further comprising:
the first material comprises molybdenum.
11. The apparatus of claim 4 further comprising:
the second material comprises lithium.
12. The apparatus of claim 11 further comprising:
the second material comprises a compound of lithium.
13. The apparatus of claim 4 further comprising:
the sputtering ion material comprises He.
14. The apparatus of claim 4 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
15. The apparatus of claim 14 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
16. The apparatus of claim 15 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
17. The apparatus of claim 16 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
18. The apparatus of claim 4 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
19. The apparatus of claim 18 comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
20. The apparatus of claim 19 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
21. The apparatus of claim 3 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
22. The apparatus of claim 21 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
23. The apparatus of claim 22, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
24. The apparatus of claim 3 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected liftime.
25. The apparatus of claim 24, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
26. The apparatus of claim 3 further comprising:
the first material comprises molybdenum.
27. The apparatus of claim 3 further comprising:
the second material comprises lithium.
28. The apparatus of claim 27 further comprising:
the second material comprises a compound of lithium.
29. The apparatus of claim 3 further comprising:
the sputtering ion material comprises He.
30. The apparatus of claim 3 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
31. The apparatus of claim 30 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
32. The apparatus claim 31 further comprising:
the temperature is between 400\xb0C. and 700\xb0 C.
33. The apparatus of claim 32 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
34. The apparatus of claim 3 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
35. The apparatus of claim 34 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formationtime and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
36. The apparatus of claim 35 further comprising:
the heater element comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
37. The apparatus of claim 2 further comprising:
the stimulating mechanism creates an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material.
38. The apparatus of claim 37 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
39. The apparatus of claim 38 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
40. The apparatus of claim 39, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
41. The apparatus of claim 37 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
42. The apparatus of claim 41, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
43. The apparatus of claim 37 further comprising:
the first material comprises molybdenum.
44. The apparatus of claim 37 further comprising:
the second material comprises lithium.
45. The apparatus of claim 44 further comprising:
the second material comprises a compound of lithium.
46. The apparatus of claim 37 further comprising:
the sputtering ion material comprises He.
47. The apparatus of claim 37 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
48. The apparatus of claim 47 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
49. The apparatus of claim 48 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
50. The apparatus of claim 49 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
51. The apparatus of claim 37 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
52. The apparatus of claim 51 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the rime between the plasma formation time and a subsequent plasma formation time.
53. The apparatus of claim 52 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
54. The apparatus claim 2 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
55. The apparatus of claim 54 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
56. The apparatus of claim 55, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
57. The apparatus of claim 2 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
58. The apparatus of claim 57, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
59. The apparatus of claim 2 further comprising:
the first material comprises molybdenum.
60. The apparatus of claim 2 further comprising:
the second material comprises lithium.
61. The apparatus of claim 60 further comprising:
the second material comprises a compound of lithium.
62. The apparatus of claim 2 further comprising:
the sputtering ion material comprises He.
63. The apparatus of claim 2 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
64. The apparatus of claim 63 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
65. The apparatus of claim 64 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
66. The apparatus of claim 65 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
67. The apparatus claim 2 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
68. The apparatus of claim 67 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
69. The apparatus of claim 68 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
70. The apparatus of claim 1 further comprising:
the gas is maintained at a pressure that in part determines the selected energy peak.
71. The apparatus of claim 70 further comprising:
the stimulating mechanism creates an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material.
72. The apparatus of claim 71 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers or the first material and layers of a third material.
73. The apparatus of claim 72 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
74. The apparatus of claim 73, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
75. The apparatus of claim 71 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
76. The apparatus of claim 75 further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
77. The apparatus of claim 71 further comprising:
the first material comprises molybdenum.
78. The apparatus of claim 71 further comprising:
the second material comprises lithium.
79. The apparatus of claim 78 further comprising:
the second material comprises a compound of lithium.
80. The apparatus of claim 71 further comprising:
the sputtering ion material comprises He.
81. The apparatus of claim 71 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
82. The apparatus of claim 81 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
83. The apparatus of claim 82 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
84. The apparatus of claim 83 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
85. The apparatus of claim 71 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
86. The apparatus of claim 85 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
87. The apparatus of claim 86 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
88. The apparatus of claim 70 further comprising:
the reflecting surface is normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
89. The apparatus of claim 88 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
90. The apparatus of claim 89, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
91. The apparatus of claim 70 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
92. The apparatus of claim 91, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
93. The apparatus of claim 70 further comprising:
the first material comprises molybdenum.
94. The apparatus of claim 70 further comprising:
the second material comprises lithium.
95. The apparatus of claim 94 further comprising:
the second material comprises a compound of lithium.
96. The apparatus of claim 70 further comprising:
the sputtering ion material comprises He.
97. The apparatus of claim 70 further comprising;
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
98. The apparatus or claim 97 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiency high to evaporate the second material and low enough not to damage the reflecting surface materials.
99. The apparatus of claim 98 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
100. The apparatus of claim 99 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
101. The apparatus of claim 70 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
102. The apparatus of claim 101 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
103. The apparatus of claim 102 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
104. The apparatus of claim 1 further comprising:
the stimulating mechanism creates an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material.
105. The apparatus of claim 104 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
106. The apparatus of claim 105 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
107. The apparatus of claim 106, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
108. The apparatus of claim 104 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
109. The apparatus of claim 108, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
110. The apparatus of claim 104 further comprising:
the first material comprises molybdenum.
111. The apparatus of claim 104 further comprising:
the second material comprises lithium.
112. The apparatus of claim 111 further comprising:
the second material comprises a compound of lithium.
113. The apparatus of claim 104 further comprising:
the sputtering ion material comprises He.
114. The apparatus of claim 104 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
115. The apparatus of claim 114 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
116. The apparatus of claim 115 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
117. The apparatus of claim 116 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
118. The apparatus of claim 104 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
119. The apparatus of claim 118 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the rime between the plasma formation time and a subsequent plasma formation time.
120. The apparatus of claim 119 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
121. The apparatus of claim 1 further comprising:
the reflecting surface is a normal angle of incidence multilayer reflector that is highly reflective to EUV light comprising a laminate of layers of the first material and layers of a third material.
122. The apparatus of claim 121 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
123. The apparatus of claim 122 further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
124. The apparatus of claim 1 further comprising:
the sputter thickness rate for sputtering of the first material by the second material is at or below a rate that will result in a single layer of the first material sustaining such sputtering for greater than a selected lifetime.
125. The apparatus of claim 124, further comprising:
the reflecting surface comprises a capping layer comprising a fourth material selected to have a sputter thickness rate that will also sustain sputtering by the second material at or below a rate that will result in a single layer of the fourth material sustaining such sputtering for greater than the selected time and to have more favorable properties when exposed to ambient or operating environments than those of the first material.
126. The apparatus of claim 1 further comprising:
the first material comprises molybdenum.
127. The apparatus of claim 1 further comprising:
the second material comprises lithium.
128. The apparatus of claim 127 further comprising:
the second material comprises a compound of lithium.
129. The apparatus of claim 1 further comprising:
the sputtering ion material comprises He.
130. The apparatus of claim 1 further comprising:
a heater element operatively coupled to the reflective surface heating the reflective surface independently of the stimulating mechanism and the ambient operating environment of the reflective surface.
131. The apparatus of claim 130 further comprising:
the heater element maintains the temperature of the reflecting surface at a temperature sufficiently high to evaporate the second material and low enough not to damage the reflecting surface materials.
132. The apparatus of claim 131 further comprising:
the temperature is between 400\xb0 C. and 700\xb0 C.
133. The apparatus of claim 132 further comprising:
the temperature is between 450\xb0 C. and 650\xb0 C.
134. The apparatus of claim 1 further comprising:
the stimulating mechanism is connected to the reflecting surface and comprises a signal generator.
135. The apparatus of claim 134 further comprising:
the stimulating mechanism provides a signal that is essentially constant during a plasma formation time and a high frequency alternating signal during at least a portion of the time between the plasma formation time and a subsequent plasma formation time.
136. The apparatus of claim 135 further comprising:
the stimulating mechanism comprises a current generator that provides a first essentially constant direct current during the plasma formation time and a second opposite polarity essentially constant direct current during the time between the plasma formation time and a subsequent plasma formation time.
137. A method of continuous removal of debris from a collector reflecting surface in an EUV light source for the removal of plasma produced residue debris on the reflecting surface, wherein the reflecting surface comprises a first material and the residue debris comprises a second material comprising the steps of:
creating a controlled sputtering ion source comprising the steps of:
providing a gas comprising the atoms of the sputtering ion material; and,
exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material.