1. A method comprising:
receiving weather data of weather at least one of encountered or to be encountered by one or more vehicles in a vehicle system traveling on a trip along a route;
based at least in part on the weather data, determining a first estimated weight of the vehicle system, wherein the first estimated weight that is determined accounts for mass attributable to the weather; and
controlling movements of the vehicle system during the trip based at least in part on the first estimated weight of the vehicle system.
2. The method of claim 1, further comprising:
generating a first trip plan based in part on the first estimated weight; the first trip plan including operational settings that are designated for the vehicle system during the trip according to locations of the vehicle system as the vehicle system travels along the route;
wherein the movements of the vehicle system during the trip are controlled according to the operational settings prescribed in the first trip plan based on where the vehicle system is located along the route.
3. The method of claim 2, further comprising:
while controlling the movements of the vehicle system according to the first trip plan, determining a difference between an actual movement of the vehicle system and an expected movement of the vehicle system;
if the difference is greater than a designated threshold, determining a second estimated weight of the vehicle system, generating a second trip plan based in part on the second estimated weight, and controlling movements of the vehicle system according to the second trip plan.
4. The method of claim 3, wherein the difference between the actual movement of the vehicle system and the expected movement of the vehicle system is smaller than if the first trip plan was generated without taking the weather data into account.
5. The method of claim 3, wherein the difference between the actual movement of the vehicle system and the expected movement of the vehicle system includes at least one of a difference in speed of the vehicle system for a given amount of tractive effort or a difference in tractive effort of the vehicle system for a given speed.
6. The method of claim 1, wherein the determined first estimated weight of the vehicle system accounts for at least one of mass gain due to retention of precipitation within the vehicles in the vehicle system or mass loss due to release of precipitation from within the vehicles in the vehicle system.
7. The method of claim 1, wherein the first estimated weight of the vehicle system is determined prior to starting the trip based on weather that the vehicle system is predicted to encounter during the trip at locations along the route.
8. The method of claim 1, wherein the weather data is received via at least one of precipitation sensors on one or more of the vehicles in the vehicle system or weather reports communicated from an off-board source.
9. The method of claim 1, wherein the weather data includes at least one of predicted weather reports at locations along the route traveled by the vehicle system during times that the vehicle system is to be traveling through the locations or past weather reports at locations of one or more of the vehicles in the vehicle system prior to the trip.
10. The method of claim 1, wherein the first estimated weight of the vehicle system is determined based on the weather data and a vehicle system makeup, the vehicle system makeup including at least one of a number of vehicles in the vehicle system, a type of vehicles in the vehicle system, an amount of cargo hauled by the vehicle system, or a type of cargo hauled by the vehicle system, wherein the vehicle system makeup affects retention of precipitation within the vehicles of the vehicle system.
11. A system comprising:
a weight determination device configured to receive weather data of weather at least one of encountered or to be encountered by one or more vehicles in a vehicle system traveling on a trip along a route, the weight determination device further configured to determine a first estimated weight of the vehicle system based at least in part on the weather data, wherein the first estimated weight accounts for mass attributable to the weather; and
a trip planner device configured to generate a first trip plan based in part on the first estimated weight, wherein movements of the vehicle system during the trip are controlled according to the first trip plan.
12. The system of claim 11, wherein the system further comprises at least one of a memory that stores past weather data of weather encountered by one or more of the vehicles in the vehicle system prior to the trip, a communication system that receives predicted weather data from an off-board source, or a precipitation sensor disposed on one or more vehicles in the vehicle system that records current weather data encountered by the one or more vehicles, the weight determination device configured to receive the weather data from at least one of the memory, the communication system, or the precipitation sensor.
13. The system of claim 11, wherein the first estimated weight of the vehicle system accounts for at least one of mass gain due to retention of precipitation within the vehicles in the vehicle system or mass loss due to release of precipitation from within the vehicles in the vehicle system.
14. The system of claim 11, wherein the trip plan generated by the trip planner device designates operational settings of the vehicle system during the trip as a function of at least one of time or location of the vehicle system along the route as the vehicle system travels along the route, the operational settings including tractive and braking settings, wherein the movements of the vehicle system during the trip are controlled according to the operational settings prescribed in the first trip plan.
15. The system of claim 11, further comprising a weight monitoring device, the weight monitoring device configured to determine a difference between the first estimated weight of the vehicle system based on expected movement of the vehicle system during the trip and a calculated actual weight of the vehicle system based on actual movement of the vehicle system during the trip.
16. The system of claim 15, wherein if the weight monitoring device determines that the difference between the first estimated weight of the vehicle system and the calculated actual weight of the vehicle system is greater than a designated threshold, the weight determination device is configured to receive additional weather data and determine a second estimated weight of the vehicle system, and the trip planner device is configured to generate a second trip plan based in part on the second estimated weight, such that movements of the vehicle system during a remainder of the trip are controlled according to the second trip plan.
17. The system of claim 15, wherein the difference between the first estimated weight of the vehicle system based on the expected movement of the vehicle system and the calculated actual weight of the vehicle system based on actual movement of the vehicle system during the trip is smaller than if the first trip plan was generated without taking the weather data into account.
18. The system of claim 11, wherein the weight determination device is configured to determine the first estimated weight based on the weather data and a vehicle system makeup, the vehicle system makeup including a type of cargo hauled by the vehicle system, wherein the type of cargo affects retention of precipitation within the vehicles of the vehicle system.
19. A method comprising:
determining a precipitation retention mass associated with at least one vehicle of a vehicle system, the precipitation retention mass determined based on received weather data of weather at least one of encountered by the at least one vehicle prior to a trip or to be encountered by the at least one vehicle while traveling along a route during the trip;
generating a trip plan based at least in part on the precipitation retention mass, wherein the trip plan comprises operational settings of the vehicle system as a function of at least one of time or location along the trip; and
controlling the vehicle system along the route during the trip according to the trip plan.
20. The method of claim 19, further comprising determining a difference between an actual movement of the vehicle system and an expected movement of the vehicle system along the route during the trip, and generating a trip re-plan if the difference exceeds a designated threshold.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a semiconductor structure comprising:
forming a disposable dielectric gate structure over a semiconductor material portion;
forming a source region, a drain region, and a body region in said semiconductor material portion;
forming a raised source region and a raised drain region on said source region and said drain region, respectively, wherein said raised source region and said raised drain region contact sidewalls of said disposable dielectric gate structure;
forming a planarization dielectric layer over said raised source region and said raised drain region and around said disposable dielectric gate structure;
removing said disposable dielectric gate structure selective to said planarization dielectric layer to form a gate cavity; and
converting surface portions of said raised source region and said raised drain region into a first dielectric spacer and a second dielectric spacer.
2. The method of claim 1, wherein said converting of said surface portions of said raised source region and said raised drain region is performed employing a thermal oxidation process, a thermal nitridation process, a thermal oxynitridation process, a plasma oxidation process, a plasma nitridation process, a plasma oxynitridation process, or a combination thereof.
3. The method of claim 1, further comprising:
forming a diffusion-resistant dielectric material liner on said semiconductor material portion, wherein said disposable dielectric gate structure is formed over said diffusion-resistant dielectric material liner;
patterning said diffusion-resistant dielectric material liner into a dielectric material portion, wherein said dielectric material portion protects a portion of said body region from conversion into a dielectric material during said converting of said surface portions of said raised source region and said raised drain region.
4. The method of claim 1, further comprising forming a replacement gate structure including a gate dielectric and a gate electrode within said gate cavity.
5. The method of claim 1, further comprising:
recessing a top surface of said planarization dielectric layer relative to a top surface of said disposable dielectric gate structure;
forming a semiconductor material layer over said planarization dielectric layer; and
converting said semiconductor material layer into a semiconductor-element-including dielectric material layer simultaneously with said converting of said surface portions of said raised source region and said raised drain region.
6. The method of claim 5, further comprising:
depositing a conformal dielectric material layer in said gate cavity after said converting of said surface portions of said raised source region and said raised drain region; and
forming an additional dielectric spacer by anisotropically etching said conformal dielectric material layer employing said semiconductor-element-including dielectric material layer as an etch mask.
7. The method of claim 1, wherein said semiconductor material portion is a semiconductor fin.
8. The method of claim 1, wherein said semiconductor material portion has a bottommost surface that is located directly on a topmost surface of an insulator layer.
9. The method of claim 1, wherein said forming said raised source region and said raised drain region comprises deposition of a semiconductor material with in-situ doping.
10. The method of claim 9, wherein said deposition is a selective epitaxy process.
11. The method of claim 1, wherein said first dielectric spacer and said second dielectric spacer are distinct structures that do not contact each other.
12. The method of claim 11, wherein said first dielectric spacer and said second dielectric spacer have an inner sidewall that is vertical at a lower portion, and a convex surface at an upper portion.
13. A method of forming a semiconductor structure comprising:
forming a dielectric gate structure over a semiconductor material portion;
forming a source region, a drain region, and a body region in said semiconductor material portion;
forming a raised source region and a raised drain region on said source region and said drain region, respectively, wherein said raised source region and said raised drain region contact sidewalls of said dielectric gate structure;
forming a planarization dielectric layer over said raised source region and said raised drain region and around said dielectric gate structure;
forming a dielectric material layer having an opening therein over said planarization dielectric layer, wherein a periphery of said opening is within an area defined by sidewalls of said dielectric gate structures; and
forming a dielectric spacer and a gate cavity by anisotropically etching said dielectric gate structure employing said dielectric material layer as an etch mask, wherein a remaining contiguous portion of said dielectric gate structure constitutes said dielectric spacer.
14. The method of claim 13, further comprising forming a replacement gate structure including a gate dielectric and a gate electrode within said gate cavity.
15. The method of claim 13, further comprising:
recessing said planarization dielectric layer below a top surface of said dielectric gate structure; and
etching said dielectric gate structure isotropically, wherein a top surface of said dielectric gate structure protrudes above a recessed surface of said planarization dielectric layer and peripheral surfaces of said dielectric gate structure adjoin sidewalls of said planarization dielectric layer below said recessed surface of said planarization dielectric layer after said etching of said dielectric gate structure.
16. The method of claim 15, wherein said dielectric material layer having said opening therein is formed directly on a recessed surface of said planarization dielectric layer and directly on portions of said sidewalls of said planarization dielectric layer.
17. The method of claim 13, wherein said semiconductor material portion is a semiconductor fin.
18. The method of claim 13, wherein said semiconductor material portion has a bottommost surface that is located directly on a topmost surface of an insulator layer.
19. The method of claim 13, wherein said forming said raised source region and said raised drain region comprises deposition of a semiconductor material with in-situ doping.
20. The method of claim 19, wherein said deposition is a selective epitaxy process.