1. A shielding structure for a control module installed on the surface of a rear cover of a display, comprising:
a plurality of clipping portions distributed on the surface of said rear cover and around said control module;
a shielding cover, at least one engaging sheet being disposed at the lateral sides of the shielding cover, said engaging sheet being respectively engaged in each said clipping portion; and
at least one propping structure disposed on the upper surface of said shielding cover and propping against said control module.
2. The shielding structure according to claim 1, wherein an accepting
space is formed inside of said shielding cover for accepting said control module and an opening is formed at one side of said shielding cover.
3. The shielding structure according to claim 1, wherein said propping structure comprises:
a through hole disposed in the upper surface of said shielding cover, a propping sheet being extended slantwise downward from the wall of said through hole, the front end of said propping sheet being bended upward an angle of elevation to form a propping portion; and
a pulling sheet disposed at the front end of said propping portion.
4. The shielding structure according to claim 1, wherein said propping structure comprises a rectangular through hole disposed in the surface of said shielding cover, and a propping sheet is extended slantwise downward from the wall of said through hole, and a notch is opened in the middle of the surface of said propping sheet.
5. The shielding structure according to claim 1, wherein said clipping portion is constituted by a clipping body and an accepting space is formed between said clipping body and the surface of said rear cover.
6. The shielding structure according to claim 1, wherein said clipping portions all face to a same direction.
7. The shielding structure according to claim 1, wherein said clipping portions respectively disposed at the right and the left sides of said control module face to each other.
8. The shielding structure of claim 1, wherein a protrusion is protruded at the inner side of said clipping body and said protrusion contacts with said engaging sheet in the form of a dot or a line.
9. The shielding structure of claim 1, wherein a plurality of rectangular through holes is disposed in each said engaging sheet for said clipping portion to pass through.
10. The shielding structure according to claim 1, wherein a breach is formed between each two adjacent engaging sheets for said clipping portion to pass through.
11. The shielding structure according to claim 1, wherein the front end of said clipping portion is extended upward an angle of elevation to form a guide plate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A polycrystalline silicon solar cell, comprising:
(a) a back electrode formed on a transparent insulating substrate;
(b) an N-type polycrystalline silicon layer formed on the back electrode, in which amorphous silicon is crystallized through a metal induced crystallization (MIC) process, and in which electrons are accumulated;
(c) a light-absorbing layer formed on the N-type polycrystalline silicon layer, which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move;
(d) a P-type polycrystalline silicon layer formed on the light-absorbing layer, which is formed using the same method as in the light-absorbing layer, which has the same vertical column grain structure as the light-absorbing layer, and in which holes are accumulated;
(e) a transparent electrode layer formed on the P-type polycrystalline silicon layer;
(f) front electrodes formed on the transparent electrode layer; and
(g) an antireflection coating film covering the front electrodes and the transparent electrode layer.
2. A method of forming a light-absorbing layer of a polycrystalline silicon solar cell, comprising:
(a) forming a polycrystalline silicon layer on a back electrode;
(b) forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and
(c) heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon.
3. The method of forming a light-absorbing layer of a polycrystalline silicon solar cell according to claim 2, wherein the forming of the polycrystalline silicon layer comprises:
(a-1) forming an amorphous silicon layer on the back electrode;
(a-2) forming a catalytic metal layer on the amorphous silicon layer to perform low-temperature crystallization; and
(a-3) heat-treating the transparent insulating substrate to crystallize amorphous silicon included in the amorphous silicon layer located beneath the catalytic metal layer into polycrystalline silicon through a metal induced crystallization (MIC) process.
4. The method of forming a light-absorbing layer of a polycrystalline silicon solar cell according to claim 3, wherein the amorphous silicon layer is deposited to a thickness of 50\u02dc200 nm in a CVD chamber through a low pressure chemical vapor deposition (LPCVD) or a plasma enhanced chemical vapor deposition (PECVD) process.
5. A method of fabricating a polycrystalline silicon solar cell, comprising:
(a) forming a back electrode on a transparent insulating substrate;
(b) forming an amorphous silicon layer on the back electrode;
(c) forming a catalytic metal layer on the amorphous silicon layer to perform low-temperature crystallization;
(d) primarily heat-treating the transparent insulating substrate to crystallize amorphous silicon included in the amorphous silicon layer located beneath the catalytic metal layer into polycrystalline silicon through a metal induced crystallization (MIC) process;
(e) doping the polycrystalline silicon with a first conductive dopant through an ion injection process to form a first conductive polycrystalline silicon layer;
(f) forming an intrinsic amorphous silicon layer on the first conductive polycrystalline silicon layer. (g) doping a second conductive dopant to a predetermined depth into the intrinsic amorphous silicon layer through an ion injection process;
(h) secondarily heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the first conductive polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process, and simultaneously activating the second conductive dopant to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon and a second conductive polycrystalline silicon layer;
(i) depositing a transparent electrode layer on the second conductive polycrystalline silicon layer;
(j) forming front electrodes on the transparent electrode layer; and
(k) forming an antireflection coating film to cover the front electrodes and the transparent electrode layer.
6. The method of fabricating a polycrystalline silicon solar cell according to claim 5, further comprising:
removing the catalytic metal patterns after the primary heat treatment of the transparent insulating substrate.
7. The method of fabricating a polycrystalline silicon solar cell according to claim 5, further comprising:
removing a part of the uppermost layer of the second conductive polycrystalline silicon layer after the secondary heat treatment of the transparent insulating substrate.
8. The method of fabricating a polycrystalline silicon solar cell according to claim 5, wherein the primary or secondary heat treatment is performed at a temperature of 400\u02dc600\xb0 C. for 30 minutes \u22124 hours.
9. The method of fabricating a polycrystalline silicon solar cell according to claim 5, wherein the first conductive polycrystalline silicon layer is an N-type polycrystalline silicon layer, the first conductive dopant is a N-type dopant, the second conductive dopant is a P-type dopant, and the second conductive polycrystalline silicon layer is a P-type polycrystalline silicon layer.
10. The method of fabricating a polycrystalline silicon solar cell according to claim 5, wherein the catalytic metal layer is deposited to a thickness of 1\u02dc20 nm.
11. A method of fabricating a polycrystalline silicon solar cell, comprising:
(a) forming a back electrode on a transparent insulating substrate;
(b) forming an amorphous silicon layer on the back electrode and simultaneously doping the amorphous silicon layer with a first conductive dopant to form a first conductive amorphous silicon layer;
(c) forming a catalytic metal layer on the first conductive amorphous silicon layer to perform low-temperature crystallization;
(d) primarily heat-treating the transparent insulating substrate to crystallize amorphous silicon included in the amorphous silicon layer located beneath the catalytic metal layer into a first conductive polycrystalline silicon through a metal induced crystallization (MIC) process to form a first conductive polycrystalline silicon layer;
(e) forming an intrinsic amorphous silicon layer on the first conductive polycrystalline silicon layer and simultaneously doping a second conductive dopant to a predetermined depth into the intrinsic amorphous silicon layer through an ion injection process to form a second conductive amorphous silicon layer together with the intrinsic amorphous silicon layer;
(f) secondarily heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer and the second conductive amorphous silicon layer using the first conductive polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process, and simultaneously activating the second conductive dopant to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon and a second conductive polycrystalline silicon layer;
(g) depositing a transparent electrode layer on the second conductive polycrystalline silicon layer;
(h) forming front electrodes on the transparent electrode layer; and
(i) forming an antireflection coating film to cover the front electrodes and the transparent electrode layer.
12. The method of fabricating a polycrystalline silicon solar cell according to claim 11, further comprising:
removing the catalytic metal patterns after the primary heat treatment of the transparent insulating substrate.
13. The method of fabricating a polycrystalline silicon solar cell according to claim 11, further comprising:
removing a part of the uppermost layer of the second conductive polycrystalline silicon layer after the secondary heat treatment of the transparent insulating substrate.
14. The method of fabricating a polycrystalline silicon solar cell according to claim 11, wherein the primary or secondary heat treatment is performed at a temperature of 400\u02dc600\xb0 C. for 30 minutes \u02dc4 hours.
15. The method of fabricating a polycrystalline silicon solar cell according to claim 11, wherein the first conductive polycrystalline silicon layer is an N-type polycrystalline silicon layer, the first conductive dopant is a N-type dopant, the second conductive dopant is a P-type dopant, and the second conductive polycrystalline silicon layer is a P-type polycrystalline silicon layer.
16. The method of fabricating a polycrystalline silicon solar cell according to claim 11, wherein the catalytic metal layer is deposited to a thickness of 1\u02dc20 nm.