What is claimed is:
1. A liquid crystal composite material for use in a liquid crystal layer of a liquid crystal display device having a pair of substrates with the liquid crystal layer interposed therebetween, and an electrode structure for generating an electric field having a component predominantly in parallel with one of said pair of substrates;
wherein said liquid crystal composite material includes a liquid chemical compound represented by a general chemical formula (I)
6
wherein in the formula (I), X1, X2 and X3 are selected from a group consisting of fluoro group, cyano group, trifluoromethyl group, trifluoromethoxyl group, nitro group and hydrogen atom, not all three X1, X2 and X3 being a hydrogen group; R is selected from a group consisting of alkyl group and alkoxyl group having the carbon number 1 to 10 which can be substituted; Ring A is selected from a group consisting of cyclohexane ring, benzene ring, dioxane ring, pyrimidine ring, and 2, 2, 2-bicyclohexane ring, Z is selected from a group consisting of single bonding, ester bonding, ether bonding, methylene, and ethylene; and n is 1 or 2.
2. A liquid crystal composition material according to claim 1, wherein X2 is a cyano group.
3. A liquid crystal composite material according to claim 1, wherein a relation between an elasticity constant K2 and a dielectric anisotropy As of said liquid crystal composite material satisfies the relation K2<9108dyn.
4. A liquid crystal composite material for use in a liquid crystal layer of a liquid crystal display device having a pair of substrates with the liquid crystal layer interposed therebetween, and an electrode structure for generating an electric field having a component predominantly in parallel with one of said pair of said substrates;
wherein said liquid composite material has a resistivity which is no greater than 11013 m and not less than 1109 m.
5. A liquid crystal composite material according to claim 4, wherein a relation between an elasticity constant K2 and a dielectric anisotropy As of said liquid composite material satisfies the relation K2<9108 dyn.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An active matrix substrate, comprising:
a plurality of scanning lines extending parallel to each other;
a plurality of signal lines extending parallel to each other in a direction crossing the scanning lines;
a plurality of thin film transistors each provided at each of intersections of the scanning lines and the signal lines, and each including a semiconductor layer and a source electrode and a drain electrode which are formed on the semiconductor layer in a layer in which the signal lines are formed; and
a coating type insulating layer formed between each of the scanning lines and each of the signal lines,
wherein a plurality of openings are formed in the insulating layer such that each of the semiconductor layers is exposed, and
at least part of a peripheral end of the opening of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers.
2. The active matrix substrate of claim 1, wherein
each of the thin film transistors includes a gate electrode formed in a layer in which the scanning lines are formed, and
the semiconductor layer and the gate electrode are electrically insulated from each other by an gate insulating film.
3. The active matrix substrate of claim 2, wherein
a plurality of gate insulating films are formed parallel to each other so as to cover respective upper surfaces of the scanning lines.
4. The active matrix substrate of claim 3, wherein
at least one of side end parts of the gate insulating film protrudes beyond the scanning line.
5. The active matrix substrate of claim 1, wherein
an auxiliary capacitor line is provided between adjacent ones of the scanning lines so as to extend along the scanning lines,
a plurality of openings are formed in the insulating layer so as to overlap with respective auxiliary capacitor lines, and
the auxiliary capacitor line and the drain electrode are electrically insulated from each other by a gate insulating film.
6. The active matrix substrate of claim 1, wherein
the insulating layer is made of an organic spin-on-glass material.
7. The active matrix substrate of claim 1, wherein
the semiconductor layer is made of an oxide semiconductor.
8. A method for manufacturing an active matrix substrate including
a plurality of scanning lines extending parallel to each other,
a plurality of signal lines extending parallel to each other in a direction crossing the scanning lines,
a plurality of thin film transistors each provided at each of intersections of the scanning lines and the signal lines, and each including a semiconductor layer and a source electrode and a drain electrode which are formed on the semiconductor layer in a layer in which the signal lines are formed, and
a coating type insulating layer formed between each of the scanning lines and each of the signal lines, comprising:
forming the scanning lines on an insulating substrate;
after a gate insulating film is formed so as to cover the scanning lines, forming the semiconductor layers on the gate insulating film;
after a spin-on-glass material is applied so as to cover the insulating substrate on which the semiconductor layers are formed and is baked, forming the insulating layer by patterning the spin-on-glass material such that each of the semiconductor layers is exposed; and
forming the signal lines on the insulating layer and forming a source electrode and a drain electrode so as to face each other on each of the semiconductor layers.
9. A method for manufacturing an active matrix substrate including
a plurality of scanning lines extending parallel to each other,
a plurality of signal lines extending parallel to each other in a direction crossing each of the scanning lines,
a plurality of thin film transistors each provided at each of intersections of the scanning lines and the signal lines, and each including a semiconductor layer and a source electrode and a drain electrode which are formed on the semiconductor layer in a layer in which the signal lines are formed, and
a coating type insulating layer formed between each of the scanning lines and each of the signal lines, comprising:
after a metal film, an inorganic insulating film, a semiconductor film, and a photosensitive resin film are stacked in this order on an insulating substrate, and a resist pattern is, by halftone exposure of the photosensitive resin film, formed on the semiconductor film corresponding to part of the metal film to be formed into the scanning lines and is formed so as to have a relatively-thick part corresponding to part of the semiconductor film to be formed into the semiconductor layer, forming a gate insulating film by etching part of the semiconductor film exposed through the resist pattern and part of the inorganic insulating film positioned below the semiconductor film;
forming the semiconductor layers by reducing a thickness of the resist pattern to etch the part of the semiconductor film exposed through the resist pattern;
forming the scanning lines by etching part of the metal film exposed through the gate insulating film;
after a spin-on-glass material is applied so as to cover the insulating substrate on which the scanning lines are formed and is baked, forming an insulating layer by patterning the spin-on-glass material such that each of the semiconductor layers is exposed; and
forming the signal lines on the insulating layer and forming a source electrode and a drain electrode so as to face each other on each of the semiconductor layers.