1. An isolated adherent placental stem cell that is:
2. CD200+ and HLA-G+;
3. CD73+, CD105+, and CD200+;
4. CD200+ and OCT-4+;
5. CD73+, CD105+ and HLA-G+;
6. CD73+ and CD105+ and facilitates the formation of one or more embryoid-like bodies in a population of placental cells comprising said stem cell when said population is cultured under conditions that allow the formation of an embryoid-like body; or
7. OCT-4+ and facilitates the formation of one or more embryoid-like bodies in a population of placental cells comprising the stem cell when said population is cultured under conditions that allow formation of embryoid-like bodies; or any combination thereof.
8. The isolated stem cell of claim 1, wherein said CD200+, HLA-G+ stem cell is CD34\u2212, CD38\u2212, CD45\u2212, CD73+ and CD105+.
9. The isolated stem cell of claim 1, wherein said CD73+, CD105+, and CD200+ stem cell is CD34\u2212, CD38\u2212, CD45\u2212, and HLA-G+.
10. The isolated stem cell of claim 1, wherein said CD200+, OCT-4+ stem cell is CD34\u2212, CD38\u2212, CD45\u2212, CD73+, CD105+ and HLA-G+.
11. The isolated stem cell of claim 1, wherein said CD73+, CD105+ and HLA-G+ stem cell is CD34\u2212, CD45\u2212, OCT-4+ and CD200+.
12. The isolated stem cell of claim 1, wherein said CD73+ and CD105+ stem cell that facilitates the formation of one or more embryoid-like bodies is OCT4+, CD34\u2212, CD38\u2212 and CD45\u2212.
13. The isolated stem cell of claim 1, wherein said OCT-4+ and which facilitates the formation of one or more embryoid-like bodies is CD73+, CD105+, CD200+, CD34\u2212, CD38\u2212, and CD45\u2212.
14. A population of isolated placental stem cells that is enriched for adherent placental stem cells that are:
15. CD200+ and HLA-G+;
16. CD73+, CD105+, and CD200+;
17. CD200+ and OCT-4+;
18. CD73+, CD105+ and HLA-G+;
19. CD73+ and CD105+ and facilitate the formation of one or more embryoid-like bodies in a population of placental cells comprising said stem cell when said population is cultured under conditions that allow the formation of an embryoid-like body; or
20. OCT-4+ and facilitate the formation of one or more embryoid-like bodies in a population of placental cells comprising the stem cell when said population is cultured under conditions that allow formation of embryoid-like bodies.
21. The population of claim 8, wherein said CD200+, HLA-G+ stem cells are CD34\u2212, CD38\u2212, CD45\u2212, CD73+ and CD105+.
22. The population of claim 8, wherein said CD73+, CD105+, and CD200+ stem cells are CD34\u2212, CD38\u2212, CD45\u2212, and HLA-G+.
23. The population of claim 8, wherein said CD200+, OCT-4+ stem cell is CD34\u2212, CD38\u2212, CD45\u2212, CD73+, CD105+ and HLA-G+.
24. The population of claim 8, wherein said CD73+, CD105+ and HLA-G+ stem cells are CD34\u2212, CD45\u2212, OCT-4+ and CD200+.
25. The population of claim 8, wherein said CD73+ and CD105+ stem cells that facilitate the formation of one or more embryoid-like bodies are OCT4+, CD34\u2212, CD38\u2212 and CD45\u2212.
26. The population of claim 8, wherein said OCT-4+ stem cells that facilitate the formation of one or more embryoid-like bodies are CD73+, CD105+, CD200+, CD34\u2212, CD38\u2212, and CD45\u2212.
27. The population of claim 8, wherein said population has been expanded.
28. The population of claim 8, wherein said population has been passaged at least once.
29. The population of claim 8, wherein said population has been passaged at least three times.
30. The population of claim 8, wherein said population has been passaged at least five times.
31. The population of claim 8, wherein said population has been passaged at least ten times.
32. The population of claim 8, wherein said cells have been cryopreserved, and wherein said population is contained within a container.
33. The population of claim 8, wherein said container is a bag suitable for the intravenous delivery of a liquid.
34. The population of claim 8, wherein said population comprises 1\xd7106 said stem cells.
35. The population of claim 8, wherein said population comprises 1\xd7107 said stem cells.
36. The population of claim 8, wherein said population comprises 1\xd7108 said stem cells.
37. The population of claim 8, wherein said population comprises 1\xd7109 said stem cells.
38. The population of claim 8, wherein said population comprises 1\xd71010 said stem cells.
39. The population of claim 8, wherein said stem cells have been passaged no more than 5 times.
40. The population of claim 8, wherein said stem cells have been passaged no more than 10 times.
41. The population of claim 8, wherein said stem cells have been passaged no more than 20 times.
42. The population of claim 8, wherein said population is contained in a 0.9% NaCl solution.
43. The isolated stem cell of claim 1, wherein said stem cell expresses one or more genes at a detectably higher level than a bone marrow-derived mesenchymal stem cell,
44. wherein said one or more genes are selected from the group consisting of ACTG2, ADARB1, AMIGO2, ARTS-1, B4GALT6, BCHE, C11orf9, CD200, COL4A1, COL4A2, CPA4, DMD, DSC3, DSG2, ELOVL2, F2RL1, FLJ10781, GATA6, GPR126, GPRC5B, ICAM1, IER3, IGFBP7, IL1A, IL6, IL18, KRT18, KRT8, LIPG, LRAP, MATN2, MEST, NFE2L3, NUAK1, PCDH7, PDLIM3, PKP2, RTN1, SERPINB9, ST3GAL6, ST6GALNAC5, SLC12A8, TCF21, TGFB2, VTN, and ZC3H12A, and
45. wherein said bone marrow-derived stem cell has undergone a number of passages in culture that is equivalent to the number of passages said placental stem cell has undergone.
46. The population of isolated stem cells of claim 8, wherein a plurality of said stem cells express one or more genes at a detectably higher level than a population of bone marrow-derived mesenchymal stem cells,
47. wherein said one or more genes are selected from the group consisting of ACTG2, ADARB1, AMIGO2, ARTS-1, B4GALT6, BCHE, C11orf9, CD200, COL4A1, COL4A2, CPA4, DMD, DSC3, DSG2, ELOVL2, F2RL1, FLJ10781, GATA6, GPR126, GPRC5B, ICAM1, IER3, IGFBP7, IL1A, IL6, IL18, KRT18, KRT8, LIPG, LRAP, MATN2, MEST, NFE2L3, NUAK1, PCDH7, PDLIM3, PKP2, RTN1, SERPINB9, ST3GAL6, ST6GALNAC5, SLC12A8, TCF21, TGFB2, VTN, and ZC3H12A, and
48. wherein said bone marrow derived stem cell has undergone a number of passages in culture that is equivalent to the number of passages said placental stem cell has undergone, and
49. wherein said population of bone marrow-derived mesenchymal stem cells has a number of cells equivalent to that in said population of isolated stem cells.
50. The population of isolated stem cells of claim 32, wherein said stem cells express ACTG2, ADARB1, AMIGO2, ARTS-1, B4GALT6, BCHE, C11orf9, CD200, COL4A1, COL4A2, CPA4, DMD, DSC3, DSG2, ELOVL2, F2RL1, FLJ10781, GATA6, GPR126, GPRC5B, ICAM1, IER3, IGFBP7, IL1A, IL6, IL18, KRT18, KRT8, LIPG, LRAP, MATN2, MEST, NFE2L3, NUAK1, PCDH7, PDLIM3, PKP2, RTN1, SERPINB9, ST3GAL6, ST6GALNAC5, SLC12A8, TCF21, TGFB2, VTN, and ZC3H12A at a detectably higher level than a population of isolated bone marrow-derived mesenchymal stem cell.
51. A composition comprising the isolated stem cell of claim 1.
52. A composition comprising the population of claim 8.
53. The composition of claim 34 that comprises about 1.25% wv human serum albumin and about 2.5% wv dextran.
54. The composition of claim 35 that comprises about 1.25% wv human serum albumin and about 2.5% wv dextran.
55. The composition of claim 34 comprising a matrix.
56. The composition of claim 35 comprising a matrix.
57. The composition of claim 39, wherein said matrix is a three-dimensional scaffold.
58. The composition of claim 39, wherein said matrix comprises collagen, gelatin, laminin, fibronectin, pectin, ornithine, or vitronectin.
59. The composition of claim 39 wherein said matrix is an amniotic membrane or amniotic membrane-derived biomaterial.
60. The composition of claim 38, wherein said matrix comprises an extracellular membrane protein.
61. The composition of claim 38, wherein said matrix comprises a synthetic compound.
62. The composition of claim 38, wherein said matrix comprises a bioactive compound.
63. The composition of claim 44, wherein said bioactive compound is a growth factor, cytokine, antibody, or organic molecule of less than 5,000 daltons.
64. The composition of claim 38, wherein a plurality of said stem cells expresses one or more genes at a detectably higher level than a bone marrow-derived mesenchymal stem cell,
65. said one or more genes are selected from the group consisting of ACTG2, ADARB1, AMIGO2, ARTS-1, B4GALT6, BCHE, C11orf9, CD200, COL4A1, COL4A2, CPA4, DMD, DSC3, DSG2, ELOVL2, F2RL1, FLJ10781, GATA6, GPR126, GPRC5B, ICAM1, IER3, IGFBP7, IL1A, IL6, IL18, KRT18, KRT8, LIPG, LRAP, MATN2, MEST, NFE2L3, NUAK1, PCDH7, PDLIM3, PKP2, RTN1, SERPINB9, ST3GAL6, ST6GALNAC5, SLC12A8, TCF21, TGFB2, VTN, and ZC3H12A, and
66. wherein said bone marrow derived stem cell has undergone a number of passages in culture equivalent to a number of passages for said placental stem cell.
67. The composition of claim 47, wherein said stem cells express ACTG2, ADARB1, AMIGO2, ARTS-1, B4GALT6, BCHE, C11orf9, CD200, COL4A1, COL4A2, CPA4, DMD, DSC3, DSG2, ELOVL2, F2RL1, FLJ10781, GATA6, GPR126, GPRC5B, ICAM1, IER3, IGFBP7, IL1A, IL6, IL18, KRT18, KRT8, LIPG, LRAP, MATN2, MEST, NFE2L3, NUAK1, PCDH7, PDLIM3, PKP2, RTN1, SERPINB9, ST3GAL6, ST6GALNAC5, SLC12A8, TCF21, TGFB2, VTN, and ZC3H12A at a detectably higher level than a population of isolated bone marrow-derived mesenchymal stem cell.
68. A method of producing cartilaginous tissue comprising culturing a plurality of the stem cell of claim 1 under conditions in which said stem cell differentiates into a chondrocytic cell, said culturing being for a time sufficient for said chondrocytic cell to produce a detectable amount of glygosaminoglycans and collagen.
69. A composition comprising the isolated placental stem cell of claim 1, and a compound that induces the differentiation of said stem cell into a chondrocytic cell, an adipocytic cell, a neuronal cell, an osteocytic cell, a pancreatic cell or a cardiac cell.
70. A composition comprising the population of isolated stem cells of claim 8, and a compound that induces the differentiation of a plurality of stem cells in said population of stem cells into chondrocytic cells, adipocytic cells, neuronal cells, osteocytic cells, pancreatic cells or cardiac cells.
71. A composition comprising a population of isolated placental stem cells collected by perfusion, wherein said composition comprises at least a portion of the perfusion solution used to collect the placental stem cells.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A varactor having a capacitance comprising:
a depletion mode transistor having a gate, a source, and a drain;
an enhancement mode transistor having a gate, a source, and a drain, wherein the gates of the depletion mode transistor and the enhancement mode transistor are coupled together, wherein the sources and drains of the depletion mode transistor and the enhancement mode transistor are coupled together, and wherein the enhancement mode transistor has a pn junction; and,
a bias source coupled to the gates and the sources and drains so as to control the capacitance.
2. The varactor of claim 1 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
3. The varactor of claim 1 wherein the gate comprises a polysilicon gate.
4. The varactor of claim 3 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
5. The varactor of claim 1 wherein the source of the depletion mode transistor comprises a plurality of source regions, wherein the drain of the depletion mode transistor comprises a plurality of drain regions, wherein the gate of the depletion mode transistor comprises a plurality of gate fingers, wherein the source of the enhancement mode transistor comprises a plurality of source regions, wherein the drain of the enhancement mode transistor comprises a plurality of drain regions, and wherein the gate of the enhancement mode transistor comprises a plurality of gate fingers.
6. The varactor of claim 5 wherein the gate fingers of the depletion mode transistor and of the enhancement mode transistor are coupled together.
7. The varactor of claim 5 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
8. The varactor of claim 5 wherein the gate fingers comprise corresponding polysilicon gate fingers.
9. The varactor of claim 1 further comprising a leakage current detector coupled to the pn junction enabling temperature to be determined as a function of leakage current though the pn junction.
10. The varactor of claim 1 further comprising a body tie forming a capacitor with the source of the enhancement mode transistor, wherein the body tie has a conductivity type opposite to the conductivity type of the source with which the body tie forms the capacitor.
11. The varactor of claim 10 wherein the source of the enhancement mode transistor comprises an elongated side, and wherein the body tie is transverse to the elongated side.
12. The varactor of claim 10 wherein the source of the enhancement mode transistor comprises an elongated side, and wherein the body tie is parallel to the elongated side.
13. A method of determining temperature comprising:
detecting a leakage current through a pn diode formed by a body region and a source region of a transistor, wherein the transistor includes a gate and a drain region, and wherein the body region separates the source and drain regions; and,
converting the leakage current to temperature.
14. The method of claim 13 wherein the transistor comprises an enhancement mode transistor.
15. The method of claim 13 wherein the transistor comprises a gate oxide between the gate and the body region.
16. The method of claim 13 wherein the gate comprise a polysilicon gate.
17. A varactor having a capacitance comprising:
a gate;
a source;
a drain; and,
a body tie forming a pn junction with the source, wherein the pn junction comprises the capacitance of the varactor.
18. The varactor of claim 17 wherein the gate, the source, and the drain form an enhancement mode transistor.
19. The varactor of claim 17 wherein the gate, the source, and the drain form a depletion mode transistor and an enhancement mode transistor.
20. The varactor of claim 19 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
21. The varactor of claim 17 wherein the gate comprises a polysilicon gate.
22. The varactor of claim 17 wherein the source comprises a plurality of source regions, wherein the drain comprises a plurality of drain regions, wherein the gate comprises a plurality of gate fingers, and wherein the body tie forms the pn junction with at least one of the source regions.
23. The varactor of claim 17 wherein the source comprises an elongated side, and wherein the body tie is transverse to the elongated side.
24. The varactor of claim 17 wherein the source comprises an elongated side, and wherein the body tie is parallel to the elongated side.
25. A varactor comprising:
a depletion mode transistor;
an enhancement mode transistor; and,
a bias source coupled to both the depletion mode transistor and the enhancement mode transistor and arranged to control the depletion mode transistor and the enhancement mode transistor so as to control a capacitance of the varactor.
26. The varactor of claim 25 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
27. The varactor of claim 25 wherein the depletion mode transistor comprises a gate, wherein the enhancement mode transistor comprises a gate, and wherein each of the gates comprises a polysilicon gate.
28. The varactor of claim 25 wherein the depletion mode transistor comprises a plurality of source regions, a plurality of drain regions, and a plurality of gate fingers, wherein the enhancement mode transistor comprises a plurality of source regions, a plurality of drain regions, and a plurality of gate fingers.
29. The varactor of claim 28 wherein the gate fingers of the depletion mode transistor and of the enhancement mode transistor are coupled together.
30. The varactor of claim 25 further comprising a leakage current detector coupled to a pn junction of the enhancement mode transistor enabling temperature to be determined as a function of leakage current though the pn junction.
31. The varactor of claim 25 wherein the depletion mode transistor and the enhancement mode transistor share a common gate.
32. A power transistor comprising:
a depletion mode transistor having a gate, a source, and a drain; and,
an enhancement mode transistor having a gate, a source, and a drain, wherein the gates of the depletion mode transistor and the enhancement mode transistor are coupled together, wherein the sources of the depletion mode transistor and the enhancement mode transistor are coupled together, and wherein the drains of the depletion mode transistor and the enhancement mode transistor are coupled together.
33. The transistor of claim 32 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
34. The transistor of claim 32 wherein the gate comprises a polysilicon gate.
35. The transistor of claim 34 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
36. The transistor of claim 32 wherein the source of the depletion mode transistor comprises a plurality of source regions coupled together, wherein the drain of the depletion mode transistor comprises a plurality of drain regions coupled together, wherein the gate of the depletion mode transistor comprises a plurality of gate fingers coupled together, wherein the source of the enhancement mode transistor comprises a plurality of source regions coupled together, wherein the drain of the enhancement mode transistor comprises a plurality of drain regions coupled together, and wherein the gate of the enhancement mode transistor comprises a plurality of gate fingers coupled together.
37. The transistor of claim 36 wherein the depletion mode transistor and the enhancement mode transistor share a common silicon substrate and a common buried oxide layer.
38. The transistor of claim 36 wherein the gate fingers comprise corresponding polysilicon gate fingers.
39. The transistor of claim 32 further comprising a leakage current detector coupled to a pn junction enabling temperature to be determined as a function of leakage current though the pn junction.