1. A method of testing a semiconductor device comprising:
selecting a portion of a memory, said memory comprised by said semiconductor device;
testing said selected portion of said memory;
designating said selected portion of said memory as a designated memory in response to an acceptable testing result; and
storing data in said designated portion of said memory for retrieval at a later time, said data comprising test data resultant from additional testing of said semiconductor device and unrelated to testing said selected portion of said memory.
2. The method of claim 1, further including attempting a soft repair of said selected memory portion in response to an unacceptable test result and designating said selected portion of memory in response to a successful repair.
3. The method of claim 2, further including selecting and testing additional memory portions of said memory in response to an unacceptable test result and unsuccessful repair attempt until a portion of said memory having an acceptable test result or successful repair is found.
4. The method of claim 1, wherein said selected portion of memory is selected to have a sufficient word length and number of bits for storing said data.
5. The method of claim 1, further including compressing said data before storing said data in said designated portion of said memory.
6. The method of claim 5, further including decompressing said data after retrieving said data from said designated portion of said memory.
7. The method of claim 1, wherein said data comprises bitmaps, memory fail data, LBIST passfail signatures or passfail data.
8. The method of claim 1, further including sending said data to a tester.
9. The method of claim 1, wherein said data is generated by ABIST or LBIST.
10. A method of testing a semiconductor device having a memory, comprising:
providing a designated memory;
performing ABIST on a memory segment to generate memory test data;
storing said memory test data in said designated memory; and
retrieving said test data at a later time.
11. The method of claim 10, wherein said memory test data is a bitmap.
12. The method of claim 10, wherein said memory test data is fail data generated from a bitmap.
13. The method of claim 12, further including ORing additional test data with said test data already stored in said designated memory.
14. The method of claim 10, further including compressing said data before storing said data in said designated memory.
15. The method of claim 14, further including decompressing said data after retrieving said data from said designated memory.
16. A method of testing a semiconductor device having a memory, comprising:
providing a designated memory;
performing an LBIST on a device logic function to generate a set of LBIST signatures;
storing said LBIST signatures in said designated memory; and
retrieving said LBIST signatures at a later time.
17. The method of claim 16, further including compressing said data before storing said data in said designated memory.
18. The method of claim 17, further including decompressing said data after retrieving said data from said designated memory.
19. The method of claim 16, wherein said LBIST is run on every group of N patterns, each group of N patterns having a cumulative fail signature.
20. The method of claim 19, further including:
identifying a failing group of N patterns;
performing a second LBIST on said device logic functions using every LBIST pattern from said group of N patterns; and
identifying every failing pattern in said group of N patterns.
21. A method of testing a function of a semiconductor device having a memory, comprising:
providing a designated memory;
performing a first test using a test pattern in a first corner of the test specification of said function of said semiconductor device;
storing the result of said first test in said designated memory;
performing a second test using said test pattern in a second corner of the test specification of said function of said semiconductor device;
retrieving said first test result from said designated memory; and
comparing said first test result with said second test result.
22. The method of claim 21, further including generating a pass signal in response to said first test result matching said second test result and generating a fail signal in response to said first test result not matching said second test result.
23. The method of claim 21 further including compressing said first test result before storing said first test result in said designated memory and decompressing said first test result after retrieving said first test result from said designated memory but before comparing said first test result to said second test result.
24. The method of claim 21 wherein said designated memory contains at least as many bits as there are latches in said function of said semiconductor device.
25. The method of claim 24, wherein said designated memory has a word length at least equal to the number of scan chains in said function of said semiconductor device.
26. A semiconductor device comprising:
a memory;
an ABIST engine adapted to test said memory; and
an interface adapted to send test data to and receive test data from a designated portion of said memory, said test data comprising data unrelated to testing said memory.
27. The semiconductor device of claim 26, wherein said interface is an ABIST interface and said test data is bitmap data.
28. The semiconductor device of claim 27, wherein said ABIST interface includes a data compress function and said ABIST engine includes a data decompress function.
29. The semiconductor device of claim 26, further including an LBIST engine adapted to test device logic functions and wherein said interface is an LBIST interface and said test data comprises LBIST patterns.
30. The semiconductor device of claim 29, wherein said LBIST interface includes a data compress function and said LBIST engine includes a data decompress function.
31. The semiconductor device of claim 26, further including a corner compare function adapted to compare the results of a test pattern run in two corners of the test specification of said semiconductor device and wherein said interface is a corner interface and said test data is the result of a first corner test.
32. The semiconductor device of claim 31, wherein said corner interface includes a data compress function and said corner compare includes a data decompress function.
33. The semiconductor device of claim 26, further including a repair function adapted to soft repair said designated portion of said memory segment.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A composition comprising
a) an anionic compound having wetting and dispersing properties selected from the group of
a1) an alkyl naphthalene sulfonate,
a2) a naphthalene sulfonate-formaldehyde condensate that may optionally be alkyl substituted, and mixtures thereof, and
b) a nitrogen-containing surfactant selected from the group consisting of alkylamine alkoxylates, alkylamidoamine alkoxylates, alkanolamides and their alkoxylates, alkylamido propylamines, betaines, amino acids, or any mixtures thereof,
wherein the weight ratio between a) and b) is between 99.99:0.01 and 40:60, provided that the molar amount of anionic sulfonate and, if any are present, carboxylate groups in the composition is in excess of the molar amount of nitrogen-containing groups.
2. A composition according to claim 1 wherein b) is an alkylamine alkoxylate, an alkylamidoamine alkoxylate, an alkanolamide, andor an alkanolamide alkoxylate having the following formula
wherein R is a hydrocarbyl or an acyl group having 8-18 carbon atoms, X is a hydrocarbyl group having 8-18 carbon atoms, hydrogen, (AO)xH or the group
Y is hydrogen or (AO)xH, n is 0-3, AO is an alkyleneoxy group with 2 or 3 carbon atoms, for ethyleneoxy groups \u03a3x is 1-30, for propyleneoxy groups \u03a3x is 0-10.
3. A composition according to claim 2 wherein b) is an alkanolamide or an alkoxylated alkanolamide according to the formula
wherein R1C(\u2550O)\u2014 is an acyl group with 8-16 carbon atoms, Y is H or the group (EO)q(PO)rH, each q is, independently, a number of 1-10 and the sum of all q is 1-20, each r is, independently, 0-5 and the sum of all r is 0-10.
4. A composition according to claim 1 wherein b) is a betaine having the formula
wherein R2 is a hydrocarbyl group with 8-18 carbon atoms or the group R3\u2014C(\u2550O)\u2014NH\u2014CH2\u2014CH2\u2014CH2\u2014, wherein R3\u2014C(\u2550O)\u2014 is an acyl group having 8-18 carbon atoms, R4 and R5 are a C1-C4-alkyl group or the group (EO)sH, and s is a number of 1-10.
5. A composition according to claim 1 wherein b) is an amino acid according to the formula
wherein R6 is a hydrocarbyl or acyl group with 8-18 carbon atoms, n is a number of 0-3, A is a group \u2014(CH2)t\u2014CO2\u2212M+, hydrogen or the group
and B is a group \u2014(CH2)t\u2014CO2\u2212M+ or H, provided that when R6 is an acyl group, n is at least 1 and the group A situated on the nitrogen atom bonded directly to the acyl group is hydrogen, t is a number 1-2, and M+ is a monovalent cation, at least one of the groups A and B is \u2014(CH2)t\u2014CO2\u2212M+.
6. A composition according to claim 1 wherein b) is an alkylamido propylamine having the formula
wherein R7(C\u2550O)\u2014 is an acyl group having 8-18 carbon atoms and R8 and R9 are, independently, an alkyl group with 1-4 carbon atoms.
7. A composition according to claim 1 comprising component a1), wherein the alkyl naphthalene sulfonate has an alkyl group with 1-10 carbon atoms.
8. A composition according to claim 1 comprising component a2).
9. A composition according to claim 7 wherein the naphthalene sulfonate-formaldehyde condensate or alkyl naphthalene sulfonate-formaldehyde condensate has a mean molecular weight of 300-2,000, and wherein the alkyl group contains 1-3 carbon atoms.
10. A composition according to claim 1 further comprising an agrochemical pesticide or another crop production chemical.
11. A composition according to claim 10 wherein the agrochemical pesticide or other crop production chemical is selected from the group of herbicides, fungicides, insecticides, and fertilizers.
12. A wetting agent which comprises the composition of claim 1.
13. A cleaning composition comprising an effective amount of the composition of claim 1.
14. A composition according to claim 8 wherein the naphthalene sulfonate-formaldehyde condensate or alkyl naphthalene sulfonate-formaldehyde condensate has a mean molecular weight of 300-2,000, and wherein the alkyl group contains 1-3 carbon atoms.
15. A method for increasing the rainfastness of an agricultural formulation which comprises adding an effective amount of the composition of claim 1 to said formulation.