1. An integrated circuit trim resistor structure with on-chip heaters, comprising:
providing a substrate with at least one isolation structure;
a doped polysilicon trim resistor structure on said isolation structure; and
at least one heating structure on said isolation structure adjacent to said trim resistor structure and separated from said trim resistor structure by a heat conducting electrical insulator.
2. The integrated circuit trim resistor structure of claim 1 wherein said heating structure comprises a material selected from the group consisting of silicon and silicon-germanium.
3. The integrated circuit trim resistor structure of claim 1 wherein Said heat conducting electrical insulator comprises a material selected from the group consisting of silicon oxide and silicon nitride.
4. An integrated circuit trim resistor structure with on-chip heaters, comprising:
providing a substrate with at least one isolation structure;
a heating structure on said isolation structure; a heat conducting electrical insulator on said heating structure; and
a doped polysilicon trim resistor structure on said heat conducting electrical insulator.
5. The integrated circuit trim resistor structure of claim 4 wherein said heating structure comprises a material selected from the group consisting of silicon and silicon-germanium.
6. The integrated circuit trim resistor structure of claim 4 wherein said heat conducting electrical insulator comprises a material selected from the group consisting of silicon oxide and silicon nitride.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A laminate comprising a thermoplastic polyimide layer, and a metal layer on a surface of the thermoplastic polyimide layer.
2. The laminate of claim 1, wherein said thermoplastic polyimide layer is surface-treated by at least one treatment selected from the group consisting of a plasma treatment, a corona treatment, a coupling agent treatment, a permanganate treatment, a ultraviolet ray emitting treatment, an electron beam emitting treatment, surface treatment by colliding an abrasive at a high speed, a firing treatment, and a hydrophilization treatment.
3. The laminate of claim 1, wherein said thermoplastic polyimide layer is surface-treated by means of an ion gun treatment.
4. The laminate of claim 3, wherein said ion gun treatment is a treatment using argon ion.
5. The laminate of claim 1, wherein said metal layer is formed by depositing a metal element while heating the thermoplastic polyimide layer.
6. The laminate of claim 5, wherein a heating temperature is at least 100\xb0 C.
7. The laminate of any one of claims 1, 2, 3 or 4, wherein said metal layer is an electrolessly plated layer.
8. The laminate of claim 6, wherein said metal layer is formed by at least one method selected from the group consisting of a sputtering method, a vacuum vapor deposition method, an ion plating method, an electron beam vapor deposition method, and a chemical vapor deposition method.
9. The laminate of claim 8, wherein said metal layer comprises a first metal layer and a second metal layer.
10. The laminate of claim 9, wherein said first metal layer comprises nickel, cobalt, chrome, titanium, molybdenum, tungsten, zinc, tin, indium, gold, or an alloy thereof.
11. The laminate of claim 10, wherein said second metal layer comprises copper or an alloy thereof.
12. A laminate comprising
a non-thermoplastic polyimide layer having a thermoplastic polyimide layer on at least one face; and
a metal layer formed on at least one face of surfaces of said thermoplastic polyimide layer.
13. A laminate comprising
a thermoplastic polyimide layer and a metal layer formed on said thermoplastic polyimide layer on one surface, and an adhesive layer on the other face.
14. A laminate comprising
a thermoplastic polyimide layer and a metal layer formed on said thermoplastic polyimide layer on one surface, and a copper foil on the other face.
15. The laminate of any one of claims 12, 13, or 14, wherein said thermoplastic polyimide layer is surface-treated by at least one treatment selected from the group consisting of a plasma treatment, a corona treatment, a coupling agent treatment, a permanganate treatment, a ultraviolet ray emitting treatment, an electron beam emitting treatment, surface treatment by colliding an abrasive at a high speed, a firing treatment, and a hydrophilization treatment.
16. The laminate of any one of claims 12, 13, or 14, wherein said thermoplastic polyimide layer is surface-treated by an ion gun treatment.
17. The laminate of claim 16, wherein said ion gun treatment is a treatment using argon ion.
18. The laminate of claim 12, 13, or 14, wherein said metal layer is formed by depositing a metal element while heating the thermoplastic polyimide layer.
19. The laminate of claim 18, wherein a heating temperature is at least 100\xb0 C.
20. A laminate comprising a polyimide film and a metal layer, wherein said polyimide film is at least two-layered structure which comprises a non-thermoplastic polyimide layer and a thermoplastic polyimide layer formed on at least one face of the non-thermoplastic polyimide layer; and said metal layer comprises a first metal layer which comprises nickel, cobalt, chrome, titanium, molybdenum, tungsten, zinc, tin, indium, gold, or an alloy thereof, and a second metal layer which comprises copper or an alloy thereof on the first metal layer.
21. The laminate of any one of claims 1, 12, 13, 14, or 20, wherein said thermoplastic polyimide layer comprises a thermoplastic polyimide which is obtained by dehydration and ring-closing a polyamic acid represented by the following general formula (1);
wherein A is a quadrivalent organic group selected from the following formula (2), and may be the same or different; X is a divalent organic group selected from the following formula (3), and may be the same or different; B is a quadrivalent organic group other than those represented by the formula (2), and may the same or different; Y is a divalent organic group other than those represented by the formula (3), and may be the same or different. m:n is 100:0 to 50:50.)
22. The laminate of any one of claims 12, 13, 14, or 20, wherein thickness of said thermoplastic polyimide layer is at least 0.01 \u03bcm to at most 10 \u03bcm, and is thicker than the non-thermoplastic polyimide layer.
23. A thermoplastic polyimide film which is obtained by surface-treated by at least one treatment selected from the group consisting of a plasma treatment, a corona treatment, a coupling agent treatment, a permanganate treatment, a ultraviolet ray emitting treatment, an electron beam emitting treatment, surface treatment by colliding an abrasive at a high speed, a firing treatment, and a hydrophilization treatment.
24. A method for preparing a printed circuit board, which comprises the steps of:
forming a thermoplastic polyimide resin layer on one face of a non-thermoplastic polyimide film,
forming an adhesive layer on the other face of the non-thermoplastic polyimide film,
opposing the adhesive layer and a circuit face of a circuit-formed circuit board to each other to laminate in accordance with a method using heating andor pressurization, and
carrying out panel plating in accordance with a physical vapor deposition method on a thermoplastic polyimide layer surface after laminating.
25. A method for preparing a printed circuit board which comprises the steps of,
laminating the other face of the non-thermoplastic polyimide film on a circuit-formed circuit board via an adhesive sheet in accordance with a method using heating andor pressurization; and
carrying out panel plating in accordance with a physical vapor deposition method on a thermoplastic polyimide layer surface after laminating.