What is claimed is:
1. A sound generation device for outputting a sound in accordance with an operation by a performer, comprising:
a housing capable of being held by both hands;
tilt detecting means for detecting an amount of tilt in at least one direction of the housing;
sound waveform data storing means for storing at least one piece of sound waveform data;
sound waveform data reading means for reading the sound waveform data from the sound waveform data storing means at a predetermined timing;
sound waveform data processing means for changing at least a frequency of the sound waveform data read by the sound waveform data reading means in accordance with the amount of tilt detected by the tilt detecting means; and
sound outputting means for outputting the sound waveform data processed by the sound waveform data processing means as a sound.
2. The sound generation device according to claim 1, wherein
the tilt detecting means detects amounts of tilt in at least two directions of the housing, and
the sound waveform data processing means changes a frequency of the sound waveform data read by the sound waveform data reading means in accordance with an amount of tilt in a first direction detected by the tilt detecting means, and changes an amplitude of the sound waveform data in accordance with an amount of tilt in a second direction detected by the tilt detecting means.
3. The sound generation device according to claim 1, further comprising lyrics data storing means for storing at least one piece of lyrics data, wherein
the sound waveform data storing means at least stores, as sound waveform data, human voice sound waveform data obtained when a person utters, at a predetermined pitch, syllables included in the lyrics data stored in the lyrics data storing means, and
the sound waveform data reading means sequentially reads syllables included in the lyrics data from the lyrics data storing means, and reads human voice sound waveform data corresponding to the read syllable from the sound waveform data storing means.
4. The sound generation device according to claim 1, further comprising first operation means with which the performer specifies a sound outputting timing, wherein
when the first operation means is operated, the sound waveform data reading means reads the sound waveform data from the sound waveform data storing means.
5. The sound generation device according to claim 1, further comprising:
backing music data storing means for storing at least one piece of backing music data; and
second operation means with which the performer specifies a backing music start timing, wherein
after the second operation means is operated, the sound outputting means sequentially reads the backing music data from the backing music data storing means, and outputs the read backing music data along with the sound waveform data processed by the sound waveform data processing means.
6. The sound generation device according to claim 5, further comprising:
reference play data storing means for storing at least one piece of reference play data;
musical performance results storing means for storing the amount of tilt detected by the tilt detecting means as musical performance results data, by associating the detected amount of tilt with the backing music data stored in the backing music data storing means;
musical performance results checking means for checking the musical performance results data stored in the musical performance results storing means against the reference play data stored in the reference play data storing means; and
musical performance final results notification means for notifying the performer of checking results obtained by the musical performance results checking means as performance final results.
7. The sound generation device according to claim 6, further comprising first operation means with which the performer specifies a sound outputting timing, wherein
when the first operation means is operated, the sound waveform data reading means reads the sound waveform data from the sound waveform data storing means, and
the musical performance results storing means stores an operation timing of the first operation means as a portion of the musical performance results data, by associating the operation timing with the backing music data stored in the backing music data storing means.
8. A sound generation program for causing a game machine to function as a sound generation device, wherein the game machine includes a housing capable of being held by both hands, tilt detecting means for outputting a value corresponding to an amount of tilt in at least one direction of the housing, program storing means for storing a program, data storing means for storing data including at least one piece of sound waveform data, program processing means for processing the data stored in the data storing means, based on the program stored in the program storing means, and sound outputting means for outputting processing results obtained by the program processing means as a sound, the sound generation program comprising:
a tilt calculating step of obtaining an amount of tilt in at least one direction of the housing, based on the value output from the tilt detecting means;
a sound waveform data reading step of reading the sound waveform data from the data storing means at a predetermined timing;
a sound waveform data processing step of changing at least a frequency of the sound waveform data read at the sound waveform data reading step, in accordance with the amount of tilt obtained at the tilt calculating step; and
a sound output controlling step of causing the sound waveform data processed at the sound waveform data processing step to be output from the sound outputting means as a sound.
9. The sound generation program according to claim 8, wherein
the tilt detecting means outputs values corresponding to amounts of tilt in at least two directions of the housing,
the tilt calculating step obtains the amounts of tilt in at least two directions of the housing, based on the values output from the tilt detecting means, and
the sound waveform data processing step changes a frequency of the sound waveform data read at the sound waveform data reading step, in accordance with an amount of tilt in a first direction obtained at the tilt calculating step, and changes an amplitude of the sound waveform data in accordance with an amount of tilt in a second direction obtained at the tilt calculating step.
10. The sound generation program according to claim 8, wherein
the data storing means further stores at least one piece of lyrics data, and stores, as sound waveform data, at least human voice sound waveform data obtained when a person utters syllables included in the stored lyrics data at a predetermined pitch, and
the sound waveform data reading step sequentially reads syllables included in the lyrics data from the data storing means, and reads human voice sound waveform data corresponding to the read syllable from the data storing means.
11. The sound generation program according to claim 8, wherein
the game device further includes first operation means with which the performer specifies a sound outputting timing, and
when the first operation means is operated, the sound waveform data reading step reads the sound waveform data from the data storing means.
12. The sound generation program according to claim 8, wherein
the game device further includes second operation means with which the performer specifies a backing music start timing,
the data storing means further stores at least one piece of backing music data, and
after the second operation means is operated, the sound output controlling step sequentially reads the backing music data from the data storing means, and outputs the read backing music data along with the sound waveform data processed at the sound waveform data processing step.
13. The sound generation program according to claim 12, wherein the data storing means further stores at least one piece of reference play data, the sound generation program further comprising:
a musical performance results storing step of causing the data storing means to store the amount of tilt obtained at the tilt calculating step as musical performance results data, by associating the obtained amount of tilt with the backing music data stored in the data storing means;
a musical performance results checking step of checking the musical performance results data stored at the musical performance results storing step against the reference play data stored in the data storing means; and
a musical performance final results notification step of notifying the performer of checking results obtained at the musical performance results checking step as performance final results.
14. The sound generation program according to claim 13, wherein
the game device further includes first operation means with which the performer specifies a sound outputting timing,
when the first operation means is operated, the sound waveform data reading step reads the sound waveform data from the data storing means, and
the musical performance results storing step stores an operation timing of the first operation means as a portion of the musical performance results data, by associating the operation timing with the backing music data stored in the data storing means.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate in which lower gate patterns and gate hard mask patterns are sequentially stacked, the lower gate patterns each having two sides;
forming junctions in the semiconductor substrate on both sides of each of the lower gate patterns;
forming a first pre-metal dielectric layer over the semiconductor substrate in which the gate hard mask patterns and the junctions are formed;
polishing the first pre-metal dielectric layer to remove the first pre-metal dielectric layer formed over the gate hard mask patterns;
forming contact holes in the firs pre-metal layer through which the junctions are exposed;
removing the gate hard mask patterns to form gate trenches through which the lower gate patterns are exposed; and
forming upper gate patterns, each including a metal layer, in the gate trenches and forming first contact plugs in the contact holes.
2. The method of claim 1, further comprising, after forming the junctions in the semiconductor substrate on both sides of each of the lower gate patterns, forming a self-aligned contact (SAC) on the entire surface of the semiconductor substrate, including the junctions.
3. The method of claim 1, comprising forming the upper gate patterns and the first contact plugs at the same time.
4. The method of claim 1, wherein each of the lower gate patterns comprises a gate insulating layer, a conductive layer for a floating gate, a dielectric layer, and a polysilicon layer for a control gate, the method comprising sequentially forming said layers of the lower gate patterns.
5. The method of claim 1, wherein the junctions comprise drain formed in a drain select transistor of a NAND flash memory and sources formed in a source select transistor of the NAND flash memory.
6. The method of claim 1, wherein:
the contact holes comprise drain contact holes through which the drain is exposed and source contact holes through which the source is exposed, and
the contact plugs comprise first drain contact plugs formed in the drain contact holes and source select lines formed in the source contact holes.
7. The method of claim 6, further comprising:
forming a second pre-metal dielectric layer on the first pre-metal dielectric layer in which the first drain contact plugs and the source select lines are formed;
forming second contact plugs connected to the first drain contact plugs in the second pre-metal dielectric layer; and
forming bit lines connected to the second contact plugs.
8. The method of claim 1, comprising, after providing the semiconductor substrate in which the lower gate patterns and the gate hard mask patterns are sequentially stacked, performing a re-oxidization process to remove damage on sidewalls of the lower gate patterns.
9. The method of claim 1, comprising, after forming the junctions in the semiconductor substrate on both sides of each of the lower gate patterns, forming spacers on sidewalls of the lower gate patterns and the gate hard mask patterns.
10. The method of claim 9, wherein the spacers comprise oxide materials.
11. The method of claim 1, wherein:
the gate hard mask patterns comprise nitride materials, and
the first pre-metal dielectric layer comprises oxide materials.
12. The method of claim 1, wherein forming the upper gate patterns, each including the metal layer, in the gate trenches and forming the first contact plugs in the contact holes comprises:
forming metallic material for gap-filling the gate trenches and the contact holes; and
removing the metallic material formed on the first pre-metal dielectric layer in such a manner that the metallic material remains within the gate trenches and the contact holes.
13. The method of claim 1, wherein the upper gate patterns and the contact plugs comprise tungsten (W).