1. A flashlight comprising:
a tubular housing having a first end and a second end opposite to said first end, and defining a first inner space that is adapted to receive a battery unit therein;
a module-receiving housing connected to said first end of said tubular housing and defining a second inner space therein;
an end closure connected to said second end of said tubular housing and provided with a conductive urging member that extends into said first inner space in said tubular housing and that is adapted to be electrically connected to a first electrode of the battery unit;
a light emitting module mounted in said second inner space in said module-receiving housing and including a heat dissipating member, a reflector that is mounted on said module-receiving housing, and a light emitting member that is disposed between said heat dissipating member and said reflector, that is controlled by said switch so as to be adapted to be connected electrically to a second electrode of the battery unit, and that is connected electrically to said urging member; and
a switch provided on said tubular housing and operable so as to control electrical connection between said light emitting member and a second electrode of the battery unit;
wherein said heat dissipating member is in contact with said tubular housing so as to dissipate heat, which results from said light emitting member, through said tubular housing.
2. The flashlight as claimed in claim 1, wherein each of said tubular housing and said heat dissipating member is made from a conductive material, said heat dissipating member being electrically connected to said light emitting member, said tubular housing being electrically connected to said urging member.
3. The flashlight as claimed in claim 2, wherein said light emitting module further includes a mounting disc, said light emitting member being mounted on said mounting disc, said mounting disc being seated on said heat dissipating member so as to enhance heat dissipation of the heat resulting from said light emitting member.
4. The flashlight as claimed in claim 3, wherein said heat dissipating member is formed with a plurality of positioning holes, said reflector including a cup-shaped housing that is formed with a plurality of positioning posts aligned respectively with said positioning holes, said light emitting module further including a plurality of fasteners that extend through said positioning holes and into said positioning posts, respectively, so as to fasten said heat dissipating member to said reflector.
5. The flashlight as claimed in claim 4, wherein said heat dissipating member is formed with a stud that projects therefrom and that has a free end, and a central hole that extends through said stud, said light emitting module further including an insulator that is connected to said free end of said stud and that is formed with a mounting hole in spatial communication with said central hole, and a conductive body that is mounted in said mounting hole in said insulator, that extends outwardly thereof, and that is adapted to be connected electrically to the second electrode of the battery unit.
6. The flashlight as claimed in claim 5, wherein said cup-shaped housing of said reflector is formed with a lamp hole, said heat dissipating member being formed with a groove distal from said stud and in spatial communication with said central hole, said heat dissipating member having a conductive wire extending from said conductive body through said central hole, said mounting disc having a first face distal from said stud of said heat dissipating member, and an opposite second face, said light emitting member having a conductive plate, a light emitting diode lamp mounted on said first face of said mounting disc, and a ring-shaped heat-isolating pad sleeved on said light emitting diode lamp, said light emitting diode lamp having a cathode connected to said conductive wire, and an anode connected to said conductive plate, said conductive wire and said conductive plate being disposed in said groove in said heat dissipating member.
7. The flashlight of claim 5, wherein said switch includes an operating portion mounted on said tubular housing, and an insulator rod extending from said operating portion in a radial direction toward an axis of said tubular housing,
said tubular housing further including
an insulator base fixedly mounted in said first end of said tubular housing, and formed with a base hole,
a positioning seat mounted in said first end of said tubular housing and abutting against said insulator base, said positioning seat being formed with a central seat hole in spatial communication with said base hole, and a peripheral seat hole surrounding said central seat hole,
an urging component received in said peripheral seat hole for urging said heat dissipating member,
a conductive biasing member disposed in said base hole, and having a first end abutting against said conductive body, and a second end opposite to said first end, and
a conductive component disposed in said base hole, and having a first end connected to said second end of said conductive biasing member, and a second end opposite to said first end,
wherein said insulator rod is operable to move between a first position, where said insulator rod separates said conductive component from the second electrode of the battery unit, and a second position, where said conductive component is brought into contact with the second electrode of the battery unit by the urging force of said conductive biasing member.
8. The flashlight of claim 1, wherein said end closure has a first end portion and an opposite second end portion, said end closure being formed with a retaining space, said end closure including a concave insulator member retained in said retaining space, and a conductive piece having a first segment mounted on a periphery of said second end portion of said end closure and in contact with said second end of said tubular housing, and an opposite second segment extending from said first segment into said retaining space, said conductive urging member being connected to said second segment of said conductive piece.
9. The flashlight of claim 8, wherein said end closure further includes a cement resistor disposed between and interconnecting said first and second segments of said conductive piece.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor memory comprising:
a semiconductor substrate having a trench;
a capacitor having a storage electrode and arranged in a lower portion of the trench;
a collar oxide film arranged on a side of the trench above the capacitor and having an upper collar member and a lower collar member, the upper collar member being thinner than a thickness of the lower collar member so as to provide a height difference therebetween;
a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to the storage electrode;
a select transistor provided on a surface of the semiconductor substrate and having a doped layer in contact with the collar oxide film; and
a conductor portion arranged upon the storage node and the doped layer opposing each other via the collar oxide film.
2. The semiconductor memory of claim 1, wherein the collar oxide film comprises:
a thick collar oxide film with a thickness equivalent to the lower collar member, arranged on the side of the trench above the capacitor; and
a thin collar oxide film with a thickness equivalent to the upper collar member, arranged on the side of the trench above the thick collar oxide film.
3. The semiconductor memory of claim 2, further comprising:
an amorphous silicon portion providing an electrical connection between the storage electrode and the storage node and arranged in the trench on the surface of the thick collar oxide film.
4. The semiconductor memory of claim 2, wherein the top of the thick collar oxide film is higher than that of the amorphous silicon portion.
5. The semiconductor memory of claim 2, further comprising a sidewall oxide film arranged upon the amorphous silicon portion on a side of the thick collar oxide film.
6. The semiconductor memory of claim 1, wherein the collar oxide film comprises:
a back silicon oxide film with a thickness equivalent to the upper collar member, arranged on the side of the trench above the capacitor; and
a front silicon oxide film with a thickness equivalent to the difference between the lower and upper collar members, arranged on the side of the back silicon oxide film above the capacitor.
7. The semiconductor memory of claim 1, wherein the capacitor comprises:
a plate electrode arranged in the semiconductor substrate including the surface of the trench; and
a capacitor dielectric film arranged between the plate electrode and the storage electrode on the side of the trench.
8. The semiconductor memory of claim 1, wherein the storage electrode, the storage node, and the amorphous silicon portion are formed of a single piece of material.
9. The semiconductor memory of claim 1, wherein a diameter of the trench at the capacitor is wider than at the collar oxide film.
10. A method of fabricating a semiconductor memory comprising:
forming a trench in a semiconductor substrate;
forming a capacitor having a storage electrode, in a lower portion of the trench;
forming a collar oxide film having an upper collar member and a lower collar member, the upper collar member being thinner than a thickness of the lower collar member so as to provide a height difference therebetween, on a side of the trench;
forming a storage node, which is electrically connected to the storage electrode, on a side of the collar oxide film in an upper portion of the trench;
forming a select transistor having a doped layer in contact with the collar oxide film and provided on a surface of the semiconductor substrate; and
forming a conductor portion arranged upon the storage node and the doped layer opposing each other via the collar oxide film.
11. The method of claim 10, wherein forming the collar oxide film comprises:
forming a thick collar oxide film with a thickness equivalent to the lower collar member on the side of the trench; and
forming a thin collar oxide film with a thickness equivalent to the upper collar member on the side of the trench on the thick collar oxide film.
12. The method of claim 11, wherein forming the thin collar oxide film comprises:
forming an amorphous silicon portion in the trench on a surface of the thick collar oxide film; and
etching the thick collar oxide film using the amorphous silicon portion as a mask.
13. The method of claim 11, wherein forming the thin collar oxide film comprises:
forming an amorphous silicon portion in the trench on the surface of the thick collar oxide film;
forming a resist portion in the trench on a surface of the thick collar oxide film above the amorphous silicon portion: and
etching the thick collar oxide film using the amorphous silicon portion and the resist portion as a mask.
14. The method of claim 11, wherein forming the thin collar oxide film comprises:
forming an amorphous silicon portion in the trench on a surface of the thick collar oxide film;
etching the thick collar oxide film using the amorphous silicon portion as a mask;
forming a boron silicate glass film on the side of the trench above the thick collar oxide film;
etching the top of the amorphous silicon portion until exposing the surface of the thick collar oxide film using the boron silicate glass films as a mask; and
etching the boron silicate glass film.
15. The method of claim 10, wherein forming the collar oxide films comprises:
forming an amorphous silicon portion on the side of the trench;
oxidizing the surface of the amorphous silicon film to form a front silicon oxide film;
etching an upper portion of the front silicon oxide film; and
oxidizing the underside of the amorphous silicon film, forming a back silicon oxide film.
16. The method of claim 15, wherein forming the collar oxide film further comprises:
forming a silicon nitride film on the surface of the amorphous silicon portion;
forming a resist portion on the surface of the silicon nitride film from the bottom of the trench to a specific depth at which the capacitor is to be formed; and
etching the silicon nitride film using the resist portion as a mask.
17. The method of claim 10, wherein said forming the collar oxide film is carried out before formation of the capacitor.
18. The semiconductor memory of claim 10, wherein forming the capacitor comprises:
forming a plate electrode in the semiconductor substrate including the surface of the trench; and
forming a capacitor dielectric film and the storage electrode in the trench.
19. The method of claim 10, wherein forming the capacitor comprises:
increasing the volume of the lower portion of the trench.