1. A device for holding and vacuum-sealing at least one container (3) having an opening, comprising
a sealing device (6) for sealing the opening in a defined end state, which device comprises
a holder with an introduction region (2), into which a wall region (3a), which adjoins the opening of the container (3) is at least partially introduced, and
a cage (9, 10, 11), which interacts with the holder and holds at least one clamping element (8) in such a manner that, when force is applied to the cage (9, 10, 11) in the direction in which the container (3) is introduced into the defined end state, the clamping element (8) can be guided out of a position in which it substantially releases the introduction region (2) into a position in which it projects into the introduction region (2).
2. The device as claimed in claim 1, which holds and vacuum-seals at least one container (3) with a wall region (3a) which adjoins the opening and is in the form of a neck.
3. The device as claimed in claim 1, wherein the cage (9, 10, 11) also comprises a carriage (9) which is displaced along the direction of introduction and a guide surface (11) arranged in a fixed position, between which the at least one clamping element (8) is held.
4. The device as claimed in claim 1, wherein the at least one clamping element comprises a ball (8).
5. The device as claimed in claim 1, wherein, the cage (9, 10, 11) holds a multiplicity of clamping elements (8) which are spaced apart from one another and are introduced into the introduction region (2) in a direction which is transverse with respect to the direction of introduction.
6. The device as claimed in claim 1, wherein, the cage (9, 10, 11), in order to guide the at least one clamping element (8), has a guide surface (11) which is part of a holding body (1) which delimits the introduction region (2).
7. The device as claimed in claim 6, wherein the guide surface comprises a holding ring or holding cylinder.
8. The device as claimed in claim 1, wherein the cage (9, 10, 11), in order to guide the at least one clamping element (8), has a guide surface (11) which effects a narrowing of the introduction region (2) in the direction of introduction.
9. The device as claimed in claim 1, wherein the cage (9, 10, 11) andor the clamping element is designed in such a manner that the clamping element (8) is latched into grooves andor projections (14a, 14b) formed on the neck (3a) of the container (3), which is to be introduced.
10. The device as claimed in claim 1, wherein the introduction region (2) is designed to hold a vacuum system, which can be introduced from the rear side with respect to the direction of introduction.
11. The device as claimed in claim 1, which also comprises a driver (16), which is assigned to the container (3), for applying force to the cage (9, 10, 11) when the container (3) is moving in the direction of introduction.
12. The device as claimed in claim 1, which comprises a vacuum bell jar (15) that can be fitted from the outside over the container.
13. The device as claimed in claim 1, which also comprises a driver (16), which is assigned to a vacuum bell jar (15) which is fitted over the introducible container (13) from the outside andor to guide elements which are introduced from the outside, for applying force to the cage (9, 10, 11) when the vacuum bell jar (15) andor guide elements which are introduced from the outside are moving in the direction of introduction.
14. The device as claimed in claim 1, wherein the cage (9, 10, 11) is held under a prestress that is directed oppositely from the direction of introduction.
15. An installation for the vacuum-coating of the interior andor exterior surfaces of at least one container (3), which comprises at least one device as claimed in claim 1.
16. The installation according to claim 15, in which the at least one container comprises a bottle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a gate insulating film formed over a substrate;
a gate electrode over the gate insulating film;
a drain region formed within the substrate on one side of the gate electrode;
a drain electrode formed on the substrate and electrically connected to the drain region;
a sidewall formed on the side of the gate electrode opposite to the drain electrode; and
an insulating film formed between the gate electrode and the drain electrode;
a source region having a grater depth than the drain region and being formed adjacent to the sidewall insulating film;
wherein the drain region is aligned to the gate electrode and the drain electrode.
2. The semiconductor device according to claim 1, wherein the drain electrode has conductive impurities.
3. The semiconductor device according to claim 1, further comprising:
a silicide layer is formed on the source region, the gate electrode and the drain electrode.
4. The semiconductor device according to claim 1, wherein the gate electrode is formed to surround the drain electrode.
5. A semiconductor device comprising:
a gate insulating film formed over a substrate;
a gate electrode over the gate insulating film;
a drain region formed within the substrate on one side of the gate electrode;
a drain electrode formed on the substrate and electrically connected to the drain region;
a sidewall formed on the side of the gate electrode opposite to the drain electrode; and
an insulating film formed between the gate electrode and the drain electrode;
a source region having a grater depth than the drain region and being formed adjacent to the sidewall insulating film;
wherein implanting second impurities into the substrate to form a source region using the gate electrode, the drain electrode and the insulating film as a mask.
6. The semiconductor device according to claim 5, wherein the drain electrode has conductive impurities.
7. The semiconductor device according to claim 5, further comprising:
a silicide layer is formed on the source region, the gate electrode and the drain electrode.
8. The semiconductor device according to claim 5, wherein the gate electrode is formed to surround the drain electrode.