1. A method for bit stream decoding of a received bit stream, the method comprising the steps of:
a) defining a detection window of sample values which are used to determine a value of a bit cell in a bit stream;
b) applying a majority voting to said sample values within said detection window;
c) generating a value of said bit cell in dependence on the results of step b); and
d) decoding the bit stream using the bit cell values generated in step c), wherein said detection window is positioned at an expected edge between two bit cells of the bit stream to overlap at least one sample of a first bit cell and at least one sample of a subsequent bit cell, having respective sample values, in order to perform bit edge detection.
2. The method of claim 1, wherein said detection window comprises an odd number of samples.
3. The method of claim 1, wherein said detection window is centered on an expected center of a bit cell of the bit stream to only overlap samples of said bit cell for detecting a bit value of said bit cell.
4. The method of claim 3, wherein glitches or spikes in the bit stream are filtering out.
5. The method of claim 1, including:
sampling said bit cell in the received bit stream, to generate at least two sample values of said bit cell.
6. A method for bit stream decoding of a received bit stream, the method for comprising the steps of:
a) defining a detection window of sample values which are used to determine a value of a bit cell in a bit stream;
b) applying a majority voting to said sample values within said detection window;
c) generating a value of said sampled bit cell in dependence on the results of step b); and
d) decoding the bit stream using the bit values generated in step c), wherein said detection window is positioned on an expected center of said bit cell of the bit stream in dependence on a predetermined offset-parameter and in dependence on a predetermined parameter specifying a number of samples in said detection window to only overlap samples of said bit cell for detecting a bit value of said bit cell.
7. The method of claim 6, wherein said detection window comprises an odd number of samples.
8. The method of claim 6, wherein said detection window is centered on an expected center of a bit cell of the bit stream to only overlap samples of said bit cell for detecting a bit value of said bit cell.
9. The method of claim 7, wherein glitches or spikes in the bit stream are filtering out.
10. A device for decoding a received bit stream, the device comprising:
means for defining a detection window of sample values which are used to determine a value of a bit cell in a bit stream;
means for applying majority voting to said sample values within said detection window;
means for generating a value of said sampled bit cell in dependence on results of said voting; and
means for decoding the bit steam using the generated bit cell values, wherein said detection window is positioned at an expected edge between two bit cells of the bit stream according to a predetermined offset-parameter and according to a predetermined parameter specifying a number of samples in said detection window to only overlap samples of said bit cell for detecting a bit value of said bit cell.
11. A device for decoding a received bit stream, the device comprising:
means for defining a detection window of sample values which are used to determine a value of a bit cell in a bit stream;
means for applying majority voting to said sample values within said detection window;
means for generating a value of said sampled bit cell in dependence on results of said voting; and
means for decoding the bit steam using the generated bit cell values, wherein said detection window is positioned at an expected edge between two bit cells of the bit stream to overlap at least one sample of a first bit cell and at least one sample of a subsequent bit cell, having respective sample values, in order to perform bit edge detection.
12. The device of claim 11, wherein said detection window comprises an odd number of samples.
13. The device of claim 11, wherein said detection window is centered on an expected edge between two bit cells of the bit stream to only overlap samples of said bit cell for detecting a bit value of said bit cell.
14. The device of claim 13, wherein glitches or spikes in the bit stream are filtering out.
15. A node in a communication system, the node comprising the device of claim 11.
16. The device of claim 11, including a sampling unit for sampling said bit cell in the received bit stream to generate at least two sample values of said bit cell.
17. The device of claim 10, wherein said detection window is positioned at an expected edge between two bit cells of the bit stream to only overlap samples of said bit cell for detecting a bit value of said bit cell.
18. The device of claim 17, wherein said detection window comprises an odd number of samples.
19. The method of claim 6, including:
sampling said bit cell in the received bit stream, to generate at least two sample values of said bit cell.
20. The device of claim 10, wherein glitches or spikes in the bit stream are filtering out.
21. The device of claim 17, including a sampling unit for sampling said bit cell in the received bit stream to generate at least two sample values of said bit cell.
22. A node in a communication system, including a device as claimed in claim 17.
23. A computer readable medium having instructions executable by at least one of a computer and a microprocessor stored thereon for performing the steps of:
a) defining a detection window of sample values which are used to determine a value of a bit cell in a bit stream;
b) applying a majority voting to said sample values within said detection window;
c) generating a value of said bit cell in dependence on the results of step b); and
d) decoding the bit stream using the bit cell values generated in step c), wherein said detection window is positioned at an expected edge between two bit cells of the bit stream to overlap at least one sample of a first bit cell and at least one sample of a subsequent bit cell, having respective sample values, in order to perform bit edge detection.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A laser device comprising:
a substrate containing gallium and nitrogen material, the substrate have a surface region characterized by a semipolar or nonpolar orientation, the substrate having a front side and a back side;
at least one active region positioned within the substrate;
an array of N emitters overlaying the active region, N being greater than 3, the array of N emitters being substantially parallel to one another and positioned between the front and the back side, each of the N emitters being configured to emit a radiation at the front side, the array of N emitter being associated with a blue or a green wavelength, the array of N emitters being characterized by an average operating power of at least 25 mW, each of the N emitters being characterized by a length and a width, the length being at least 400 um, the width being at least 1 um;
at least one electrode electrically coupled to the array of N emitters; and
at least one optical member positioned at the front side of the substrate for optically combining radiation from the emitters.
2. The device of claim 1 wherein the laser device is operable in an environment comprising at least 150,000 ppmv oxygen gas; whereupon the laser device is substantially free from efficiency degradation over a time period from the oxygen gas.
3. The device of claim 1 wherein the laser device is substantially free from AlGaN or InAlGaN claddings; wherein each of the emitter comprises a front facet and a rear facet, the front facet being substantially free from coatings.
4. The device of claim 1 further comprising a micro-channel cooler thermally coupled to the substrate; and further comprising a submount characterized by a coefficient of thermal expansion (CTE) associated with the substrate and a heat sink.
5. The device of claim 1 further comprising a submount coupled to the substrate, the submount is made of a material including at least one of aluminum nitride, BeO, diamond, composite diamond, or combinations.
6. The device of claim 1 further wherein the substrate is glued onto a submount, the submount being characterized by a heat conductivity of at least 200 W(mk).
7. The device of claim 1 wherein the substrate comprises one or more cladding regions.
8. The device of claim 1 wherein the one or more optical members comprise a fast-axis collimation lens.
9. The device of claim 1 wherein the laser device is characterized by a spectral width of at least 4 nm; wherein N ranges between 3 and 50.
10. The device of claim 1 wherein each of the N emitters produces an average output power of 25 to 1000 mW.
11. The device of claim 1 wherein each of the N emitters produces an average output power greater than 1 W.
12. The device of claim 1 wherein the N emitters being separated by 3 um to 300 um from one another.
13. A laser device comprising:
a substrate containing gallium and nitrogen material, the substrate have a surface region characterized by a semipolar or nonpolar orientation, the substrate having a front side and a back side;
one or more active regions positioned within the substrate;
an array of N emitters overlaying the one or more active regions, N being greater than 3, the array of N emitters being substantially parallel to one another and positioned between the front and the back side, each of the N emitters being configured to emit a radiation at the front side, the array of N emitter being associated with a blue or a green wavelength, the array of N emitters being characterized by an average operating power of at least 25 mW, each of the N emitters being characterized by a length and a width, the length being at least 400 um, the width being at least 1 um;
one or more electrodes electrically coupled to the array of N emitters;
one or more optical members positioned at the front side of the substrate for optically collimating radiation from the emitters;
a heat sink thermally coupled to the first substrate.
14. The device of claim 13 further comprising a second substrate stacking on top of the first substrate.
15. The device of claim 13 further comprising a second substrate stacking by side of the first substrate.
16. A laser device comprising:
a substrate containing gallium and nitrogen material, the substrate have a surface region characterized by a semipolar or nonpolar orientation, the substrate having a top side and a bottom side;
an N number of active regions positioned near the top side of the first substrate, N being greater than 3, each of the active regions comprises a doped region associated with a p type;
an array of N emitters overlaying the doped regions, the array of N emitters being substantially parallel to one another, each of the N emitters being configured to emit a radiation at the front side, the array of N emitters being characterized by an average operating power of at least 25 mW, each of the N emitters being characterized by a length and a width, the length being at least 400 um, the width being at least 1 um;
one or more electrodes electrically coupled to the array of N emitters;
one or more optical members positioned at the front side of the substrate for optically collimating radiation from the emitters; and
a submount characterized by a thermal emissivity of at least 0.6.
17. The device of claim 16 wherein the submount comprises diamond material or copper tungsten alloy material or beryllium oxide material.
18. The device of claim 16 wherein the surface region is characterized by the {11-22}, {20-21}, or the {30-31} planes or within +\u22125 degrees from these planes.
19. The device of claim 16 wherein the submount is directly coupled to the top side of the substrate.
20. The device of claim 16 wherein the submount is directly coupled to the bottom side of the substrate.
21. The device of claim 16 wherein the submount is directly coupled to array of N emitters; wherein the one or more optical members comprises a collimating lens.
22. The device of claim 16 wherein the laser device is characterized by an output wavelength of about 505-550 nm or 425-475 nm.
23. The device of claim 16 further comprising a heat sink thermally coupled to the submount.
24. The device of claim 16 wherein the laser device is characterized by a peak wall plug efficiency of at least 25%; and further comprising one or more quantum wells positioned within the N number of active regions.
25. A laser device comprising:
a substrate, the substrate having a front side and a back side;
at least one active region positioned within the substrate;
an array of N emitters overlaying the active region, N being greater than 3, the array of N emitters being substantially parallel to one another and positioned between the front and the back side, each of the N emitters being configured to emit a radiation at the front side, the array of N emitter being associated with a blue or a green wavelength, the array of N emitters being characterized by an average operating power, each of the N emitters being characterized by a length and a width;
at least one electrode electrically coupled to the array of N emitters; and
at least one optical member positioned at the front side of the substrate for optically combining radiation from the emitters.