1. A method, comprising:
selectively forming a first etch stop layer above only one of a first transistor element and a second transistor element;
forming a first contact etch stop layer above said first and second transistor elements and said first etch stop layer after selectively forming said first etch stop layer above only one of said first and second transistor elements, said first contact etch stop layer having a first specified intrinsic stress;
selectively removing a portion of said first contact etch stop layer formed above said one of said first transistor element and said second transistor element having formed thereabove said first etch stop layer by a selective etch process using said first etch stop layer as an etch stop; and
forming a second contact etch stop layer above said first and second transistor elements, said second contact etch stop layer having a second intrinsic stress that differs from said first intrinsic stress.
2. The method of claim 1, further comprising forming a second etch stop layer prior to forming said second contact etch stop layer and selectively removing a portion of said second contact etch stop layer above the other one of said one of said first transistor element and said second transistor element using said second etch stop layer as an etch stop.
3. The method of claim 1, wherein selectively forming said first etch stop layer comprises depositing said first etch stop layer above said first and second transistor elements, forming a first mask layer covering said one of said first transistor element and said second transistor element and removing a non-masked portion of said first etch stop layer.
4. The method of claim 1, wherein said one of said first transistor element and said second transistor element receiving said first etch stop layer is an N-channel transistor element and said first contact etch stop layer comprises compressive stress.
5. The method of claim 1, wherein said one of said first transistor element and said second transistor element receiving said first etch stop layer is a P-channel transistor element and said first contact etch stop layer comprises tensile stress.
6. A method, comprising:
selectively forming a liner having a first type of intrinsic stress on a first transistor element while maintaining a second transistor element exposed;
selectively forming a first etch stop layer on said liner while maintaining said second transistor element exposed;
forming a first contact etch stop layer above said first and second transistor elements, said first contact etch stop layer having a second type of intrinsic stress other than said first type;
selectively removing a portion of said first contact etch stop layer formed above said first transistor element using said first etch stop layer as an etch stop;
removing said first etch stop layer; and
forming a second contact etch stop layer above said first and second transistor elements, said second contact etch stop layer having said first type of intrinsic stress.
7. The method of claim 6, further comprising forming a second etch stop layer prior to forming said second contact etch stop layer and selectively removing a portion of said second contact etch stop layer above said second transistor element using said second etch stop layer as an etch stop.
8. The method of claim 6, wherein selectively forming said liner and said first etch stop layer comprises depositing said liner with said first type of intrinsic stress, depositing said first etch stop layer on said liner, forming a mask layer covering said first transistor element and exposing said second transistor element and removing a non-masked portion of said liner and said first etch stop layer.
9. The method of claim 6, wherein said first transistor element is a P-channel transistor and said second transistor element is an N-channel transistor.
10. The method of claim 9, wherein said first type of intrinsic stress is a compressive stress.
11. The method of claim 6, wherein said first transistor element is an N-channel transistor and said second transistor element is a P-channel transistor.
12. The method of claim 11, wherein said first type of intrinsic stress is a tensile stress.
13. The method of claim 6, wherein removing said first etch stop layer comprises exposing said liner and forming said second contact etch stop layer above said first and second transistor elements comprises forming said second contact etch stop layer above said exposed liner.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A canopy sheet material having a greater length than width and having higher water permeability in a longitudinally extending substantially centre lengthwise part of the material than in lengthwise side parts of the material on either side of the higher water permeability center part, and wherein at least the side parts of the material are substantially water impermeable and are transparent or translucent, and the center part of the material is narrower across the length of the material than the side parts of the material and has permeability such that when substantially horizontal water can drain rapidly through the center part without pooling.
2. A canopy sheet material according to claim 1 wherein the center lengthwise part of the material has a width of at least 5 cm.
3. A canopy sheet material according to claim 1 wherein the center lengthwise part of the material has a width of at least 8 cm.
4. A canopy sheet material according to claim 1 also comprising lengthwise extending outer parts outboard of the side parts and in which the material has higher permeability than in the side parts
5. A canopy sheet material according to claim 4 wherein the permeability of the outer parts is intermediate between that of the side parts and the center part.
6. A canopy sheet material according to claim 4 or also comprising lengthwise extending outermost edge parts outboard of the outer parts.
7. A canopy sheet material according to claim 1 also comprising lengthwise extending outer most edge parts outboard of the side parts.
8. A canopy sheet material according to claim 1 which is white in color
9. A canopy sheet material according to claim 1 formed from a plastics resin comprising a white pigment.
10. A canopy sheet material according to claim 1 formed from a plastics resin comprising a white pigment selected from the group consisting of zirconium dioxide, magnesium zirconate, calcium zirconate, strontium zirconate, barium zirconate, zirconium silicate, zinc sulphide, calcium carbonate, barium sulphate, magnesium oxide, strontium carbonate, barium carbonate, and potassium titanate and mixtures thereof.
11. A canopy sheet material according to claim 1 wherein the material is woven from warp and weft tapes.
12. A canopy sheet material according to claim 4 wherein the material is woven from warp and weft tapes and the permeability of the material in the center part of the material is through the wave weave of the warp and weft tapes.
13. A canopy sheet material according to claim 4 wherein the material is woven from warp and weft tapes and the structure of the weave is altered in the center lengthwise part of the material relative to the side parts of the material.
14. A canopy sheet material according to claim 1 wherein warp tapes have a greater thickness than the weft tapes in the center part of the material.
15. A canopy sheet material according to claim 1 wherein warp tapes have a greater thickness in the center part of the material than in the side parts of the material.
16. A canopy sheet material according to any claim 1 wherein warp tapes in the side parts of the material have a rectangular or square cross-section and warp tapes in the center part of the have a circular or oval cross-section.
17. A canopy sheet material according to any claim 1 wherein warp andor weft tapes comprise slits through the tapes lengthwise of the tapes in the center part of the material.
18. A canopy sheet material according to claim 1 wherein the material is in the center part of the material woven with a weave of tightness such that at crossings of warp and weft tapes of the material the warp and weft tapes are pushed or crammed against each other, such that warp andor weft tapes are partly folded.
19. A canopy sheet material according to any one of claim 1 wherein the width of the material is between about 2.5 and about 3.5 metres meters.
20. A canopy sheet material having a greater length than width and having higher water permeability in a longitudinally extending substantially center lengthwise part of the material than in lengthwise side parts of the material on either side of the higher water permeability center part, and wherein at least the side parts of the material are substantially water impermeable and are transparent or translucent, and the center part of the material has permeability such that when substantially horizontal water can drain through the center part, the material also comprising lengthwise extending outer parts outboard of the side parts and in which the material has higher permeability than in the side parts, and the permeability of the outer parts being intermediate between that of the side parts and the center part.
21. A canopy sheet material according to claim 20 wherein the center lengthwise part of the material has a width of at least 5 cm.
22. A canopy sheet material according to claim 20 wherein the center lengthwise part of the material has a width of at least 8 cm.
23. A method which includes supporting over one or more plant(s) as a canopy a sheet material according to claim 1 so that rain falling on the canopy runs down the side parts and drains through the center part to approximately the center of the plant(s).
24. A method according to claim 23 which includes supporting the sheet material by clipping or otherwise attaching lengthwise edges of the material to cables or wires along rows of plants on either side, in a garden, field crop, orchard or vineyard.