1. A device having a solid conjugated semiconductor, said device comprising:
an unmodified hole transport material,
wherein the unmodified hole transport material is mixed with an oxidized hole transport material as a dopant, and
wherein the oxidized hole transport material is present in the mixture with the unmodified hole transport material in a range of about 0.01 wt. % to 10 wt. %.
2. The device according to claim 1, wherein the unmodified hole transport material is represented by formula (I)
wherein R in each occurrence is dependently selected from hexyl and ethylhexyl within the wt % ratio of hexyl:ethylhexyl being about 40: about 60, or represented by formula (II)
or represented by formula (III)
3. A device having a solid conjugated semiconductor, said device comprising:
an unmodified hole transport material,
wherein the unmodified hole transport material is mixed with an oxidized hole transport material as a dopant, and
wherein the oxidized hole transport material is present in the mixture with the unmodified hole transport material in a range of about 0.08 wt. % to 1.2 wt %.
4. The device according to claim 1, wherein the device further comprises a semiconductor oxide layer sensitized with a dye.
5. The device according claim 4, wherein the dye is a ruthenium complex.
6. The device according to claim 4, wherein the semiconductor oxide layer is porous.
7. The device according to claim 4, wherein the semiconductor oxide layer comprises nanoparticles.
8. The device according to claim 7, wherein the nanoparticles are TiO2 particles.
9. A mixture comprising:
an unmodified hole transport material and an oxidized hole transport material,
wherein the oxidized hole transport material is present in the mixture with the unmodified hole transport material in a range of about 0.01 wt. % to 10 wt. %.
10. The mixture according to claim 9, wherein the mixture is utilized as a doped hole transport material in a device having a solid conjugated semiconductor.
11. The mixture according to claim 9, wherein the mixture is utilized as a doped hole transport material in the manufacture of a device having a solid conjugated semiconductor.
12. A method for preparing a device having a solid conjugated semiconductor, said method comprising the steps of:
oxidizing a hole transport material;
mixing the oxidized hole transport material with an unmodified hole transport material; and
applying the mixture to a semiconductor oxide layer;
wherein the oxidized hole transport material is present in the mixture with the unmodified hole transport material in a range of about 0.01 wt. % to 10 wt. %.
13. The method according to claim 12, wherein the hole transport material in the oxidizing step is chemically oxidized.
14. The method according to claim 13, wherein unreacted reactants and reduced oxidants are removed prior to the mixing step.
15. The method according to claim 14, wherein the oxidation of the hole transport material is performed by using silver hexafluoroantimonate (AgSbF6) or nitrosonium tetrafluoroborate (NOBF4).
16. The method according to claim 12, wherein radical cations of the hole transport material are obtained by oxidation.
17. The method according to claim 12, further comprising at least one of the following steps:
providing a semiconductor oxide layer;
applying said mixture to said semiconductor oxide layer; or
connecting electrodes to said semiconductor oxide layer and to said mixture.
18. A method for preparing a device having a solid conjugated semiconductor, said method comprising the steps of:
oxidizing a hole transport material;
mixing the oxidized hole transport material with an unmodified hole transport material; and
applying the mixture to a semiconductor oxide layer;
wherein the oxidized hole transport material is present in the mixture with the unmodified hole transport material in a range of about 0.08 wt. % to 1.2 wt. %.
19. The device according to claim 1, wherein the device is located in a solar cell.
20. The device according to claim 19, wherein the solar cell is a solid-state solar cell.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image processing device comprising:
a local mean image generating section configured to generate a local mean image of an image to be processed;
a binarization image generating section configured to generate a binarization image of said image to be processed, where pixels corresponding to high frequency regions in said image to be processed have a first grey scale and pixels corresponding to low frequency regions in said image to be processed have a second grey scale;
a ternarization image generating section configured to generate a ternarization image of said image to be processed by dividing, based on comparison between said image to be processed and the local mean image, regions having the first grey scale in the binarization image into regions having the first grey scale and regions having a third grey scale;
a connected-component analyzing section configured to recognize connected regions having the second grey scale in the ternarization image;
a filling section configured to fill the connected regions with the first grey scale when a ratio of an amount of pixels having the first grey scale to that of pixels having the third grey scale at boundaries of the connected regions is greater than a predetermined threshold, and to fill the connected regions with the third grey scale when a ratio of an amount of pixels having the third grey scale to that of pixels having the first grey scale at boundaries of the connected regions is greater than the predetermined threshold; and
a recognizing section configured to recognize strokes and lines in said image to be processed according to consistency of grey scale at object boundaries in the filled ternarization image.
2. The image processing device of claim 1, wherein, the filling section performs the filling under a condition that the area of the connected regions is less than a predetermined threshold andor consistency of grey scale of the connected regions reaches a predetermined criterion.
3. The image processing device of claim 1, further comprising:
a quanternarization section configured to divide, based on grey scale values of pixels in corresponding regions of said image to be processed, regions having the second grey scale in the filled ternarization image into background regions having the second grey scale and figure regions having a fourth grey scale, so as to generate a quanternarization image.
4. The image processing device of claim 3, further comprising:
a directed dilation section configured to eliminate, through a directed dilation, regions having the first grey scale and the third grey scale at boundaries of the background regions and the figure regions in the quanternarization image.
5. The image processing device of claim 4, further comprising:
an object separating section configured to separate, from the directedly dilated quanternarization image, regions having the first grey scale andor regions having the third grey scale as strokes andor lines.
6. An image processing method comprising steps of:
generating a local mean image of an image to be processed;
generating a binarization image of said image to be processed, wherein pixels corresponding to high frequency regions in said image to be processed have a first grey scale and pixels corresponding to low frequency regions in said image to be processed have a second grey scale;
generating a ternarization image of said image to be processed by dividing, based on comparison between said image to be processed and the local mean image, regions having the first grey scale in the binarization image into regions having the first grey scale and regions having a third grey scale;
recognizing connected regions having the second grey scale in the ternarization image;
filling the connected regions with the first grey scale when a ratio of an amount of pixels having the first grey scale to that of pixels having the third grey scale at boundaries of the connected regions is greater than a predetermined threshold, and filling the connected regions with the third grey scale when a ratio of an amount of pixels having the third grey scale to that of pixels having the first grey scale at boundaries of the connected regions is greater than the predetermined threshold; and
recognizing strokes and lines in said image to be processed according to consistency of grey scale at object boundaries in the filled ternarization image.
7. The image processing method of claim 6, wherein, in the step of filling the connected regions, the filling is performed under a condition that the area of the connected regions is less than a predetermined threshold andor consistency of grey scale of the connected regions reaches a predetermined criterion.
8. The image processing method of claim 6, further comprising a step of:
dividing, based on grey scale values of pixels in corresponding regions of said image to be processed, regions having the second grey scale in the filled ternarization image into background regions having the second grey scale and figure regions having a fourth grey scale, so as to generate a quanternarization image.
9. The image processing method of claim 8, further comprising a step of:
eliminating, through a directed dilation, regions having the first grey scale and the third grey scale at boundaries of the background regions and the figure regions in the quanternarization image.
10. The image processing method of claim 9, further comprising a step of:
separating, from the directedly dilated quanternarization image, regions having the first grey scale andor regions having the third grey scale as strokes andor lines.