What is claimed is:
1. An ultrasound system, comprising:
transmit and receive circuitry for transmitting and receiving ultrasound signals; and
a plurality of signal processing modules inline in a data stream receiving said ultrasound signals, said signal processing modules including input multiplexers adapted to control an order of processing by said plurality of signal processing modules.
2. An ultrasound system in accordance with claim 1, said input multiplexers comprising bypass multiplexers for bypassing one or more of said signal processing modules.
3. An ultrasound system in accordance with claim 2, said signal processing modules comprising nonlinear signal processing modules.
4. An ultrasound system in accordance with claim 3, said nonlinear signal processing modules including at least one of log compress, decimation, compounding, blending, edge enhancement, automatic gain control, BHNS, lateral, or persistence filters.
5. An image processing system, comprising: a plurality of signal processing modules inline in a data stream receiving signals, said signal processing modules including input multiplexers adapted to control an order of processing by said plurality of signal processing modules.
6. An image processing system in accordance with claim 5, said input multiplexers comprising bypass multiplexers for bypassing one or more of said signal processing modules.
7. An imaging system in accordance with claim 6, said signal processing modules comprising nonlinear signal processing modules.
8. An imaging system in accordance with claim 7, said nonlinear signal processing modules including at least one of log compress, decimation, compounding, blending, edge enhancement, automatic gain control, BHNS, lateral, or persistence filters.
9. An imaging system in accordance with claim 5, said signal processing modules comprising hardware signal processing modules.
10. A method comprising:
providing transmit and receive circuitry for transmitting and receiving ultrasound signals; and
providing a plurality of signal processing modules inline in a data stream receiving said ultrasound signals, said signal processing modules including input multiplexers adapted to control an order of processing by said plurality of signal processing modules.
11. A method in accordance with claim 10, said input multiplexers comprising bypass multiplexers for bypassing one or more of said signal processing modules.
12. A method in accordance with claim 11, said signal processing modules comprising nonlinear signal processing modules.
13. A method in accordance with claim 12, said nonlinear signal processing modules including at least one of log compress, decimation, compounding, blending, edge enhancement, automatic gain control, BHNS, lateral, or persistence filters amplitude data.
14. A method according to claim 13, said signal processing modules comprising hardware signal processing modules.
15. A method, comprising: providing a plurality of signal processing modules inline in a data stream receiving signals, said signal processing modules including input multiplexers adapted to control an order of processing by said plurality of signal processing modules.
16. A method according to claim 15, said input multiplexers comprising bypass multiplexers for bypassing one or more of said signal processing modules.
17. A method according to claim 16, said signal processing modules comprising nonlinear signal processing modules.
18. A method according to claim 17, said nonlinear signal processing modules including at least one of log compress, decimation, compounding, blending, edge enhancement, automatic gain control, BHNS, lateral, or persistence filters.
19. A method according to claim 18, said signal processing modules comprising hardware signal processing modules.
20. A method comprising:
receiving a plurality of data signals;
processing said data signals with a plurality of signal processing modules; and
multiplexing inputs of said signal processing modules to arrange an order of processing.
21. A method according to claim 20, said multiplexing inputs comprising bypassing one or more of said signal processing modules.
22. A method according to claim 21, said signal processing modules comprising hardware signal processing modules.
23. A method according to claim 22, said signal processing modules comprising nonlinear signal processing modules.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a base film of a graphene, comprising:
forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas;
heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and
heating the substrate to a temperature at which crystal grains of metal are grown in the metal film,
wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
2. The method of claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
3. The method of claim 2, wherein a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the forming a metal film is repeated.
4. The method of claim 3, wherein the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the forming a metal film is repeated.
5. A graphene forming method, comprising:
forming a metal film as a base film of a graphene on a substrate; and
forming the graphene on the metal film,
wherein the forming a metal film comprises:
forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas;
heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and
heating the substrate to a temperature at which crystal grains of metal are grown in the metal film,
wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
6. The method of claim 5, wherein, in the forming a metal film, the forming the metal film, heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
7. The method of claim 6, wherein, in the forming a metal film, a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the forming the metal film is repeated.
8. The method of claim 7, wherein, in the forming a metal film, the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when forming the metal film is repeated.
9. An apparatus for forming a base film of a graphene, comprising:
a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas;
a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and
a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film,
wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module.
10. The apparatus of claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated.
11. The apparatus of claim 10, wherein, in the CVD module, a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the formation of the metal film is repeated.
12. The apparatus of claim 11, wherein in the CVD module, the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the formation of the metal film is repeated.