1. A variable resistance memory device, comprising:
a variable resistance memory cell;
a switch that selectively passes a write voltage to an input terminal of the variable resistance memory cell; and
a trigger circuit operative in response to a mode control signal indicating a program mode to control the switch to cut off the write voltage from the input terminal upon determining that the variable resistance memory cell is programmed to a target state by detecting a voltage at the input terminal.
2. The variable resistance memory device of claim 1, wherein the variable resistance memory cell comprises at least one unipolar resistance memory material.
3. The variable resistance memory device of claim 1, wherein the switch comprises a single transistor controlled by the trigger circuit.
4. The variable resistance memory device of claim 1, wherein the trigger circuit comprises a comparator that compares a voltage level of the input terminal with a reference voltage to generate a comparison result and generates a switch control signal for controlling the switch according to the comparison result.
5. The variable resistance memory device of claim 4, wherein the comparator generates the switch control signal with a logic level that causes the switch to cut off the write voltage from the input terminal upon determining that the voltage level of the input terminal is higher than the reference voltage.
6. The variable resistance memory device of claim 4, wherein the comparator generates the comparison result with a high logic level where the voltage level of the input terminal is lower than the reference voltage.
7. A variable resistance memory device comprising:
a variable resistance memory cell having an input terminal;
a switch that selectively passes a write voltage to the input terminal; and
a trigger circuit that controls operation of the switch in accordance with a switch control signal, the trigger circuit comprising;
a comparator that compares a voltage apparent at the input terminal with a reference voltage to generate a comparison result,
a first multiplexer that selects between the comparison result and an inverted comparison result in response to a program state control signal indicating a target state; and
a second multiplexer that selects between an output of the first multiplexer and a row select signal to generate the switch control signal.
8. The variable resistance memory device of claim 7, wherein the first multiplexer selects the inverted comparison result wherein the target state is a reset state and selects the comparison result where the target state is a set state.
9. A variable resistance memory device, comprising:
a variable resistance memory cell having an input terminal;
a switch that selectively passes a write voltage to the input terminal in response to a switch control signal; and
a trigger circuit configured to control operation of the switch in response to a determination of whether the variable resistance memory cell is programmed to a target state by; detecting a voltage apparent at the input terminal, comparing the voltage apparent at the input terminal with a reference voltage, generating a corresponding comparison result, and generating the switch control signal according to the comparison result,
wherein the reference voltage is controlled according to a magnitude of a signal delay between the switch and the variable resistance memory cell.
10. The variable resistance memory device of claim 9, wherein the reference voltage decreases as the magnitude of the signal delay increases.
11. A variable resistance memory device, comprising:
a variable resistance memory cell having an input terminal;
a single switch that selectively passes a write voltage to the input terminal, wherein the write voltage is one of a set voltage and a reset voltage for the variable resistance memory cell; and
a trigger circuit that controls operation of the single switch by generating a switch control signal in response to a determination that the variable resistance memory cell is programmed to a target state based on a comparison of a voltage apparent at the input terminal and a reference voltage.
12. The variable resistance memory device of claim 11, wherein the target state is indicated by a program state control signal received by the trigger circuit.
13. The variable resistance memory device of claim 11, wherein the trigger circuit controls operation of the single switch by generating the switch control signal further in response to a mode control signal indicating a program mode.
14. The variable resistance memory device of claim 11, wherein the trigger circuit controls operation of the single switch by generating the switch control signal further in response to a row select control signal indicating a read mode.
15. The variable resistance memory device of claim 11, wherein the trigger circuit comprises:
a comparator that compares the voltage apparent at the input terminal with the reference voltage to generate a comparison result;
a first multiplexer that selects between the comparison result and an inverted comparison result in response to a program state control signal indicating a target state; and
a second multiplexer that selects between an output of the first multiplexer and a row select signal to generate the switch control signal.
16. The variable resistance memory device of claim 11, wherein the variable resistance memory cell is a phase change memory cell.
17. The variable resistance memory device of claim 11, wherein the variable resistance memory cell comprises at least one unipolar resistance memory material.
18. The variable resistance memory device of claim 11, wherein the single switch is a single NMOS transistor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic refrigeration material of a composition represented by the formula La1-fREf(Fe1-a-b-c-d-eSiaCobXcYdZe)13, wherein RE stands for at least one element selected from the group consisting of rare earth elements including Sc and Y and excluding La, X stands for at least one of Ga and Al, Y stands for at least one element selected from the group consisting of Ge, Sn, B, and C, Z stands for at least one element selected from the group consisting of Ti, V, Cr, Mn, Ni, Cu, Zn, and Zr, a satisfies 0.03\u2266a\u22660.17, b satisfies 0.003\u2266b\u22660.06, c satisfies 0.02\u2266c\u22660.10, d satisfies 0\u2266d\u22660.04, e satisfies 0\u2266e\u22660.04, and f satisfies 0\u2266f\u22660.50, wherein said magnetic refrigeration material has a Curie temperature of not lower than 220 K and not higher than 276 K, and a maximum (\u2212\u0394Smax) of magnetic entropy change (\u2212\u0394SM) of said material when subjected to a field change up to 2 Tesla is not less than 5 JkgK.
2. The magnetic refrigeration material according to claim 1, wherein a full width at half maximum (K) of a curve of the magnetic entropy change (\u2212\u0394SM) as a function of temperature under 0-2 Tesla is not less than 40 K.
3. The magnetic refrigeration material according to claim 1, wherein said material has a relative cooling power representing magnetic refrigeration performance when the material is subjected to a field change up to 2 Tesla, of not less than 200 Jkg.
4. The magnetic refrigeration material according to claim 1, wherein said material has a Curie temperature of not lower than 220 K and not higher than 250 K.
5. A magnetic refrigeration device utilizing the magnetic refrigeration material of claim 1.
6. The magnetic refrigeration material according to claim 2, wherein said material has a relative cooling power representing magnetic refrigeration performance when the material is subjected to a field change up to 2 Tesla, of not less than 200 Jkg.
7. The magnetic refrigeration material according to claim 3, wherein said material has a Curie temperature of not lower than 220 K and not higher than 250 K.
8. A magnetic refrigeration device utilizing the magnetic refrigeration material of claim 2.
9. A magnetic refrigeration device utilizing the magnetic refrigeration material of claim 3.
10. A magnetic refrigeration device utilizing the magnetic refrigeration material of claim 4.