1. A method, comprising:
generating a graph in a first computer system, wherein nodes of the graph represent information technology (IT) components of an enterprise;
collapsing a multi-node subgraph of the graph, comprising:
collapsing nodes of the subgraph that represent IT components that are in a first state;
collapsing nodes of the subgraph that meet a first criterion; and
associating expansion indicators with nodes in the collapsed subgraph to indicate where the collapsed subgraph may be expanded; and
displaying the graph.
2. The method of claim 1, wherein the act of collapsing a multi-node subgraph is optionally performed prior to an initial display of the graph.
3. The method of claim 1, further comprising:
receiving a request to collapse the multi-node subgraph,
wherein the act of collapsing a multi-node subgraph is performed responsive to the request.
4. The method of claim 1, further comprising:
expanding the collapsed multi-node subgraph to include nodes that were collapsed by the performance of the act of collapsing a multi-node subgraph of the graph.
5. The method of claim 1, wherein nodes that are collapsed are removed from a visible display of the graph.
6. The method of claim 1, further comprising:
predetermining which nodes would be collapsed by the act of collapsing a multi-node subgraph of the graph; and
associating collapse indicators with nodes in the multi-node subgraph to indicate where the multi-node subgraph may be collapsed.
7. The method of claim 1, wherein the act of collapsing nodes of the subgraph that represent IT components that are in a first state comprises:
preserving a root node of the subgraph from collapse, even if it is in the first state.
8. The method of claim 1, wherein the act of collapsing nodes of the subgraph that represent IT components that are in a first state comprises:
collapsing nodes of the subgraph that represent IT components that are not affected by any event having an impact on the IT components.
9. The method of claim 1, wherein the act of collapsing a multi-node subgraph of the graph further comprises:
collapsing nodes of the subgraph that meet a second criterion.
10. The method of claim 1, wherein the act of collapsing nodes of the subgraph that meet a first criterion comprises:
preserving a root node of the subgraph from collapse, even if it meets the first criterion.
11. The method of claim 1, further comprising:
receiving a definition of the first criterion from a user of the graph.
12. The method of claim 1, wherein the act of collapsing nodes of the subgraph that meet a first criterion comprises:
preserving a first node of the subgraph from collapse if multiple paths through the subgraph to nodes that do not meet the first criterion intersect at the first node.
13. The method of claim 1, wherein the act of associating expansion indicators with nodes in the collapsed subgraph to indicate where the collapsed subgraph may be expanded comprises:
associating expansion indicators that vary, depending on state information associated with the IT components represented by nodes that are collapsed in the subgraph.
14. The method of claim 1, further comprising:
associating indicators in the graph with nodes representing IT components directly impacted by an event associated with the first criterion.
15. The method of claim 1, wherein the act of collapsing nodes of the subgraph that meet a first criterion comprises:
preserving nodes representing IT components directly impacted by an event associated with the first criterion.
16. The method of claim 1, further comprising:
receiving a request to expand the collapsed multi-node subgraph.
17. The method of claim 1, wherein the act of further comprising:
receiving a request to collapse the multi-node subgraph,
wherein the request is generated responsive to a user interaction with a collapse indicator that suggests a multi-node subgraph of the graph that may be collapsed.
18. The method of claim 1, further comprising:
repeating the act of generating a graph in a first computer system, the act of collapsing a multi-node subgraph of the graph, and the act of displaying the graph, responsive to an event affecting a component represented by a node of the graph.
19. A computer readable medium with instructions for a programmable control device stored thereon wherein the instructions cause a programmable control device to perform the method of claim 1.
20. A networked computer system comprising:
a plurality of computers communicatively coupled, at least one of the plurality of computers programmed to perform at least a portion of the method of claim 1 wherein the entire method of claim 1 is performed collectively by the plurality of computers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A hybrid bonding system for semiconductor wafers, the system comprising:
a chamber;
a plurality of sub-chambers disposed within the chamber; and
a robotics handler disposed within the chamber adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers, wherein the plurality of sub-chambers includes: a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers; a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together; and a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.
2. The hybrid bonding system according to claim 1, further comprising a first load port adapted to support a plurality of first semiconductor wafers, a second load port adapted to support a plurality of second semiconductor wafers, and a third load port adapted to support a plurality of the first semiconductor wafers and the second semiconductor wafers that have been hybrid bonded together by the system, wherein the first load port, the second load port, and the third load port are disposed proximate the robotics handler.
3. The hybrid bonding system according to claim 1, wherein the system comprises a single platform.
4. The hybrid bonding system according to claim 1, wherein the plurality of sub-chambers further includes a fourth sub-chamber adapted to clean the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together.
5. The hybrid bonding system according to claim 4, wherein a handling time period for the system between cleaning the plurality of semiconductor wafers in the fourth sub-chamber and hybrid bonding the plurality of semiconductor wafers in the third sub-chamber comprises about 30 minutes or less.
6. The hybrid bonding system according to claim 1, wherein the first sub-chamber or the second sub-chamber includes a heated support for one of the plurality of semiconductor wafers and a pump, a purge line, and a vat coupled thereto; and wherein the first sub-chamber or the second sub-chamber further comprises a bubbler coupled to the vat.
7. A hybrid bonding method for semiconductor wafers, the method comprising:
forming a protection layer over top surfaces of a first semiconductor wafer and a second semiconductor wafer;
placing the first semiconductor wafer and the second semiconductor wafer into a chamber;
removing the protection layer from over the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
activating the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
coupling the top surface of the second semiconductor wafer to the top surface of the first semiconductor wafer; and
hybrid bonding the first semiconductor wafer to the second semiconductor wafer;
wherein removing the protection layer, activating the top surfaces, coupling the top surface of the second semiconductor wafer to the top surface of the first semiconductor wafer, and hybrid bonding the first semiconductor wafer to the second semiconductor wafer are performed without removing the first semiconductor wafer and the second semiconductor wafer from the chamber.
8. The method according to claim 7, wherein removing the protection layer comprises a method selected from the group consisting essentially of exposure to an acid, exposure to HCOOH, exposure to HCl, thermal decomposition, thermal desorption, exposure to a plasma removal treatment, exposure to ultraviolet (UV) light, and combinations thereof.
9. The method according to claim 7, further comprising cleaning the top surfaces of the first semiconductor wafer and the second semiconductor wafer, after activating the top surfaces.
10. The method according to claim 9, wherein removing the protection layer, activating the top surfaces, and cleaning the top surfaces are each performed in a separate sub-chamber within the chamber.
11. The method according to claim 7, wherein coupling the top surface of the second semiconductor wafer to the top surface of the first semiconductor wafer and hybrid bonding the first semiconductor wafer to the second semiconductor wafer are performed in a single sub-chamber within the chamber.
12. The method according to claim 7, wherein forming the protection layer comprises forming a material selected from the group consisting essentially of C, Si, H, and combinations thereof.
13. The method according to claim 7, wherein forming the protection layer comprises forming a material having a thickness of about 100 Angstroms or less, or wherein forming the protection layer comprises forming a monolayer of material.
14. The method according to claim 7, wherein removing the protection layer or activating the top surfaces also comprises cleaning the top surfaces of the first semiconductor wafer and the second semiconductor wafer.
15. A hybrid bonding method for semiconductor wafers, the method comprising:
providing a first semiconductor wafer and a second semiconductor wafer, the first semiconductor wafer and the second semiconductor wafer each having a plurality of conductive pads disposed within an insulating material on a top surface thereof;
forming a protection layer over the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
placing the first semiconductor wafer and the second semiconductor wafer into a chamber;
removing the protection layer from over the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
activating the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
cleaning the top surfaces of the first semiconductor wafer and the second semiconductor wafer;
coupling together the top surfaces of the second semiconductor wafer and the first semiconductor wafer; and
hybrid bonding the first semiconductor wafer to the second semiconductor wafer, wherein hybrid bonding the first semiconductor wafer to the second semiconductor wafer comprises forming a first bond between the insulating material of the first semiconductor wafer and the insulating material of the second semiconductor wafer and forming a second bond between the plurality of conductive pads of the first semiconductor wafer and the plurality of conductive pads of the second semiconductor wafer; and wherein removing the protection layer, activating the top surfaces, cleaning the top surfaces, coupling together the top surfaces, and hybrid bonding the first semiconductor wafer to the second semiconductor wafer are performed without removing the first semiconductor wafer and the second semiconductor wafer from the chamber.
16. The method according to claim 15, wherein the top surfaces of the first semiconductor wafer and the second semiconductor wafer include an oxide material formed thereon, and wherein removing the protection layer or activating the top surfaces comprises removing a portion of the oxide material.
17. The method according to claim 16, wherein the plurality of conductive pads comprises Cu or a Cu alloy, and wherein removing the portion of the oxide material comprises removing CuOx.
18. The method according to claim 15, wherein cleaning the top surfaces comprises a method selected from the group consisting essentially of exposure to deionized (DI) H2O, exposure to NH4OH, exposure to diluted hydrofluoric acid (DHF), exposure to an acid, a cleaning with a brush, a mega-sonic procedure, a spin process, exposure to an infrared (IR) lamp, and combinations thereof.
19. The method according to claim 15, wherein hybrid bonding the first semiconductor wafer to the second semiconductor wafer is performed at a pressure of less than about 30MPa or a temperature of about 100 to 500 degrees C.
20. The method according to claim 15, wherein a storage (Q) time comprising a time period between forming the protection layer and hybrid bonding the first semiconductor wafer to the second semiconductor wafer is greater than about 1 day.