1. An internal combustion engine, including:
an engine block defining at least one row of cylinders, the row extending from a first end toward a second end;
a front housing attached to the first end;
an idler gear assembly having an idler gear rotatably mounted on a stub shaft, the idler gear assembly having a first attachment to the engine block and a second attachment to the front housing; and
a thrust plate positioned between the front housing and the idler gear assembly and including an annular thrust surface, a pair of sealed fastener device openings, and an unsealed lubrication opening.
2. The internal combustion engine of claim 1, further including a pair of threaded fastener devices entering through opposing faces of the thrust plate and positioned through the sealed fastener device openings, wherein a first threaded fastener device is threaded into the engine block and a second threaded fastener device is threaded into the stub shaft.
3. The internal combustion engine of claim 2, wherein each of the sealed fastener device openings includes a sealing member attached within a plate opening and including a pair of face seals separated by a distance greater than a uniform thickness of the thrust plate.
4. The internal combustion engine of claim 3, wherein the pair of face seals of each sealing member includes a first face seal that is deformed inwardly toward the thrust plate by the stub shaft, and a second face seal that is deformed inwardly toward the thrust plate by the front housing.
5. The internal combustion engine of claim 3, wherein the unsealed lubrication opening fluidly connects an upstream segment of a stub shaft lubrication passage with a downstream segment of the stub shaft lubrication passage.
6. The internal combustion engine of claim 3, wherein the thrust plate further includes at least one unsealed locating feature opening.
7. The internal combustion engine of claim 6, wherein a distribution of the sealed fastener device openings, the unsealed lubrication opening, and the unsealed locating feature opening about the opposing faces of the thrust plate is asymmetrical.
8. The internal combustion engine of claim 3, further including a gear train, wherein the gear train includes a crank gear in mesh with the idler gear.
9. The internal combustion engine of claim 3, wherein the front housing is a relatively soft material and the thrust plate is a relatively hard material.
10. A method of operating an internal combustion engine, the internal combustion engine including an engine block defining at least one row of cylinders, the row extending from a first end toward a second end, a front housing attached to the first end, an idler gear assembly having an idler gear rotatably mounted on a stub shaft, the idler gear assembly having a first attachment to the engine block and a second attachment to the front housing, and a thrust plate positioned between the front housing and the idler gear assembly and including an annular thrust surface, a pair of sealed fastener device openings, and an unsealed lubrication opening, the method including the steps of:
driving a gear train including the idler gear with the internal combustion engine;
contacting the annular thrust surface of the thrust plate with the idler gear;
circulating lubricating oil along a stub shaft lubrication passage, including circulating the lubricating oil through the unsealed lubrication opening of the thrust plate;
compressing a first face seal of each of the pair of sealed fastener device openings with the stub shaft; and
compressing a second face seal of each of the pair of sealed fastener device openings with the front housing.
11. The method of claim 10, wherein the contacting step includes protecting the front housing from contact with the idler gear.
12. The method of claim 10, further including:
contacting the thrust plate and the first face seal of each of the pair of sealed fastener device openings with the stub shaft; and
contacting the thrust plate and the second face seal of each of the pair of sealed fastener device openings with the front housing.
13. A thrust plate, including:
a plate defining opposing faces and having a uniform thickness, wherein a first face of the opposing faces includes an annular thrust surface;
an unsealed lubrication opening through the plate;
a pair of sealed fastener device openings through the plate, wherein each of the sealed fastener device openings includes a sealing member attached within a plate opening and having a pair of face seals separated by a distance greater than the uniform thickness of the plate; and
at least one unsealed locating feature opening through the plate.
14. The thrust plate of claim 13, wherein the plate is circular.
15. The thrust plate of claim 14, wherein the annular thrust surface surrounds a stub shaft engagement surface, wherein the unsealed lubrication opening and the sealed fastener device openings are positioned through the stub shaft engagement surface, wherein a distance between each of the sealed fastener device openings and the unsealed lubrication opening is less than about 20 mm.
16. The thrust plate of claim 14, wherein a distribution of the sealed fastener device openings, the unsealed lubrication opening, and the unsealed locating feature opening about the opposing faces of the thrust plate is asymmetrical.
17. The thrust plate of claim 16, wherein the plate has an axial thickness of between about 2.75 mm and about 3.25 mm and a diameter of between about 105 mm and about 110 mm.
18. The thrust plate of claim 17, wherein the unsealed lubrication opening is positioned at a center of the plate and has a diameter of between about 7 mm and about 11 mm.
19. The thrust plate of claim 18, wherein the pair of sealed fastener device openings have an unsealed diameter of between about 19 mm and about 23 mm, and a sealed diameter of between about 15 mm and about 20 mm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. (canceled)
2. A semiconductor device comprising:
an oxide semiconductor film over an insulating surface;
a source electrode and a drain electrode over the oxide semiconductor film;
an oxide insulating film over and in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and
a first metal oxide film over the oxide insulating film,
wherein the first metal oxide film has a film density of higher than or equal to 3.2 gcm3,
wherein the source electrode overlaps with a first end of the oxide semiconductor film, and
wherein the drain electrode overlaps with a second end of the oxide semiconductor film.
3. The semiconductor device according to claim 2, further comprising a second metal oxide film in contact with the oxide semiconductor film.
4. The semiconductor device according to claim 2,
wherein the first metal oxide film comprises aluminum oxide.
5. The semiconductor device according to claim 2,
wherein the first metal oxide film comprises Ga\u2014Zn-based oxide.
6. The semiconductor device according to claims 2,
wherein the oxide semiconductor film comprises at least one oxide of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
7. The semiconductor device according to claim 2,
wherein the oxide insulating film comprises a region in which the oxygen content is higher than the stoichiometric proportion.
8. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source electrode and a drain electrode over the oxide semiconductor film; and
a protective film over the oxide semiconductor film, the source electrode, and the drain electrode,
wherein the protective film is a stack in which a first metal oxide film is provided over an oxide insulating film,
wherein the oxide insulating film is in contact with the oxide semiconductor film,
wherein the first metal oxide film has a film density of higher than or equal to 3.2 gcm3,
wherein the source electrode overlaps with a first end of the oxide semiconductor film, and
wherein the drain electrode overlaps with a second end of the oxide semiconductor film.
9. The semiconductor device according to claim 8,
wherein the first metal oxide film comprises aluminum oxide.
10. The semiconductor device according to claim 8,
wherein the first metal oxide film comprises Ga\u2014Zn-based oxide.
11. The semiconductor device according to claim 8, further comprising a conductive film in contact with the first metal oxide film of the protective film.
12. The semiconductor device according to claim 11,
wherein the conductive film includes at least one of zinc oxide, indium tin oxide, titanium oxide, aluminum, and titanium.
13. The semiconductor device according to claim 8,
wherein the oxide semiconductor film includes at least one oxide of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
14. The semiconductor device according to claim 8, further comprising a second metal oxide film over and in contact with the gate insulating film.
15. The semiconductor device according to claim 8, further comprising a base insulating film under and in contact with the gate electrode,
wherein the base insulating film includes a third metal oxide film in contact with the gate electrode, and
wherein a film density of the third metal oxide film is higher than or equal to 3.2 gcm3.
16. The semiconductor device according to claim 8,
wherein the oxide insulating film comprises a region in which the oxygen content is higher than the stoichiometric proportion.