1. A halogenated indium oxo alkoxide of formula In7O2(OH)(OR)12X4(ROH)x
wherein R is C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl,
X s F, Cl, Br, or I, and
x is from 0 to 10.
2. The indium oxo alkoxide according to claim 1, of formula:
In7(\u03bc4-O)2(\u03bc2-OH)(\u03bc1-OEt)3(\u03bc2-OEt)7(\u03bc3-OEt)2(\u03bc1-Cl)4.
3. A process of preparing the indium oxo alkoxide according to claim 1, the process comprising:
reacting a reaction mixture comprising an indium(III) halide InX3, a sodium or potassium isopropoxide, and isopropanol and optionally filtering off an intermediate solid and washing the intermediate solid with isopropanol, thereby obtaining an isopropanol-comprising wash solution,
removing isopropanol from the reaction mixture, the isopropanol-comprising wash solution, or both, thereby obtaining a solid,
taking up the solid obtained after removing isopropanol in an alcohol ROH, thereby obtaining a mixture,
optionally filtering the mixture obtained in taking up the solid, and
crystallizing the indium oxo alkoxide out of the mixture obtained in taking up the solid.
4. The process of claim 3,
wherein the indium(III) halide InX3 is InCl3 and
the alcohol is selected from the group consisting of CH3OH, HOCH2CH3, HOCH2CH2CH3, HOCH(CH3)2, HOCH2CH2CH2CH3,HOCH(CH3)(CH2CH3) and HOC(CH3)3.
5. A coating, comprising:
the indium oxo alkoxide according to claim 1.
6. The coating according to claim 5, obtained by a process comprising depositing the coating from nonaqueous solution.
7. A liquid coating composition, comprising:
the indium oxo alkoxide according to claim 1.
8. An electronic component, comprising:
the indium oxo alkoxide according to claim 1.
9. The process of claim 3, wherein the process comprises filtering the mixture obtained in taking up the solid.
10. The electronic component of claim 8, wherein the component is a transistor, a display, an RFID tag, a circuit, a diode, a sensor, or a solar cell.
11. The process of claim 3, wherein a molar ratio of the sodium or potassium isopropoxide to the indium(III) halide InX3 in the reacting is from 2.0:1 to 2.51:1.
12. The process of claim 11, wherein the molar ratio of the sodium or potassium isopropoxide to the indium(III) halide InX3 in the reacting is from 2.4:1 to 2.5:1.
13. The process of claim 3, wherein a molar ratio of the isopropanol to the indium(III) halide InX3 in the reacting is from 5:1 to 3000:1.
14. The process of claim 13, wherein the molar ratio of the isopropanol to the indium(III) halide InX3 in the reacting is from 15:1 to 100:1.
15. The process of claim 3, wherein the reaction mixture comprises, as precursors, only precursors that comprise indium.
16. The process of claim 3, wherein the reaction mixture further comprises a precursor comprising a metal other than indium in a 0 oxidation state or a metal oxide precursor comprising a metal other than indium.
17. An anhydrous composition, comprising:
the halogenated indium oxo alkoxide of claim 1, and
a solvent.
18. The composition of claim 17, wherein a content of the alkoxide is from 0.1 to 15% by weight, based on a total mass of the composition.
19. The composition of claim 17, wherein a viscosity of the composition is from 1 to 10 mPa\xb7s determined to DIN 53019 parts 1 to 2 and measured at 20\xb0 C.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a semiconductor device, the method comprising:
forming an active region in a semiconductor substrate;
etching the active region to form a first trench and a second trench in a recess region, wherein a vertical structure is formed between the first trench and the second trench;
etching the vertical structure to form a protruding portion on a bottom of the recess region; and
filling the first and second trenches with a conductive material to define a gate structure.
2. The method of claim 1, further comprising:
forming a first hard mask pattern over the semiconductor substrate to define the first and second trenches; and
filling the first and second trenches with dielectric material.
3. The method of claim 2, wherein the dielectric material is a Spin-On-Dielectric (SOD) material.
4. The method of claim 2, further comprising:
removing the first hard mask pattern.
5. The method of claim 4, further comprising:
forming a second hard mask pattern that exposes the vertical structure, wherein the vertical structure is etched using the second hard mask pattern to a depth that is shallower than that of the first or second trench.
6. The method according to claim 5, wherein the first hard mask pattern and the second hard mask pattern each includes a carbon layer.
7. The method of claim 1, wherein the protruding portion is bar-shaped.
8. The method of claim 7, wherein the protruding portion is parallel to a gate line extending along a given direction.
9. The method of claim 7, wherein the protruding portion is perpendicular to a gate line extending along a given direction.
10. A semiconductor device comprising:
an active region formed in a semiconductor substrate;
a recess region formed in the active region, wherein a protruding portion is formed on a bottom of the recess region; and
a gate structure formed along a gate line and within the recess region.
11. The semiconductor device according to claim 10, wherein the protruding portion is bar-shaped.
12. The semiconductor device according to claim 10, wherein the protruding portion is formed along the gate line.
13. The semiconductor device according to claim 10, wherein the protruding portion is formed perpendicular to the gate line.