1. A monolithic integrated CMOS and MEMS device, the device comprising:
a thickness of a first semiconductor substrate having a first top surface region and a first bottom surface region;
one or more CMOS integrated circuit (IC) devices provided on a CMOS integrated circuit (IC) device region coupled to the first bottom surface region, the CMOS IC device region having a CMOS surface region, wherein the one or more CMOS IC devices includes a plurality of transistors configured in an upside-down orientation;
a bonding material coupled to the CMOS surface region;
a second semiconductor substrate having a second top surface region and a second bottom surface region, the second top surface region coupled to the CMOS surface region by bonding the second top surface region to the bonding material, the second semiconductor substrate comprising one or more first air dielectric regions spatially configured towards the second top surface region;
one or more free standing MEMS structures overlying and adjacent to one or more portions of the first top surface region of the thickness of the first semiconductor substrate.
2. The device of claim 1 wherein the first semiconductor substrate is selected from a group consisting of: a buried oxide (BOX) layer overlying a silicon substrate, an epitaxial (EPI) layer overlying a silicon substrate, an amorphous silicon substrate, a single crystal silicon substrate, and a polycrystalline silicon substrate.
3. The device of claim 1 wherein each of the plurality of transistors has source and drain regions above a gate region, and the one or more free standing MEMS structures are disposed closer to the source and drain regions than to the gate region.
4. The device of claim 1 further comprising one or more via structures within one or more portions of the first semiconductor substrate, the one or more via structures extending from one or more portions of the CMOS integrated circuit device region to a vicinity of the thickness of the first semiconductor substrate.
5. The device of claim 1 further comprising an enclosure layer overlying the one or more free standing MEMS devices, the enclosure layer having one or more openings.
6. The device of claim 5 wherein the enclosure layer comprises a titanium material, the titanium material being activated as a getter layer.
7. (canceled)
8. The device of claim 5 further comprising:
an open region provided between the one or more free standing MEMS structures and the enclosure layer; and
an encapsulating layer provided overlying the enclosure layer to substantially seal the one or more free standing MEMS structures to form a predetermined environment within the open region.
9. (canceled)
10. The device of claim 8 wherein the predetermine environment comprises an inert gas at a determined pressure.
11. The device of claim 1 further comprising one or more bond pad openings to expose one or more bond pads coupled to the CMOS device layer.
12. The device of claim 1 further comprising an enclosure housing the one or more free standing MEMS structures, the enclosure configured overlying the first outer region of the thickness of the first semiconductor substrate, the enclosure having an upper cover region.
13. (canceled)
14. A monolithic integrated CMOS and MEMS device, the device comprising:
a thickness of a first semiconductor substrate having a first top surface region, a first bottom surface region, and one or more first air dielectric regions;
one or more CMOS integrated circuit (IC) devices provided on a CMOS integrated circuit (IC) device region coupled to the first bottom surface region, the CMOS IC device region having a CMOS surface region, wherein the one or more CMOS IC devices includes a plurality of transistors configured in a flipped orientation;
a bonding material coupled to the CMOS surface region;
a second semiconductor substrate having a second top surface region and a second bottom surface region, the second top surface region coupled to the CMOS surface region by bonding the second surface region to the bonding material, the second semiconductor substrate comprising one or more second air dielectric regions spatially configured towards the second top surface region;
one or more free standing MEMS structures overlying one or more portions of the first top surface region of the thickness of the first semiconductor substrate.
15. The device of claim 14 wherein the first semiconductor substrate is selected from a group consisting of: a buried oxide (BOX) layer overlying a silicon substrate, an epitaxial (EPI) layer overlying a silicon substrate.
16. The device of claim 14 wherein the bonding material is a chemical mechanical planarization (CMP) processed bonding material or a top oxide material.
17. The device of claim 14 further comprising an enclosure layer overlying the one or more free standing MEMS devices, the enclosure layer having one or more openings, wherein the enclosure layer comprises a titanium material, the titanium material being activated as a getter layer.
18. (canceled)
19. The device of claim 17 further comprising:
an open region provided between the one or more free standing MEMS structures and the enclosure layer; and
an encapsulating layer provided overlying the enclosure layer to substantially seal the one or more free standing MEMS structures to form a predetermined environment within the open region, wherein the predetermined environment comprises an inert gas at a determined pressure.
20. The device of claim 19 wherein the encapsulating layer is selected from a metal layer, a spin on glass, a spray on glass, amorphous silicon, a dielectric layer, or any combination of these layers.
21. A monolithic integrated CMOS and MEMS device, the device comprising:
a thickness of a first semiconductor substrate having a first top surface region and a first bottom surface region;
one or more CMOS integrated circuit (IC) devices provided on a CMOS integrated circuit (IC) device region coupled to the first bottom surface region, the CMOS IC device region having a CMOS surface region, wherein the one or more CMOS IC devices includes a plurality of transistors configured in an upside-down orientation and a plurality of interconnect layers below the plurality of transistors;
a bonding material coupled to the CMOS surface region;
a second semiconductor substrate having a second top surface region and a second bottom surface region, the second top surface region coupled to the CMOS surface region by bonding the second top surface region to the bonding material, the second semiconductor substrate comprising one or more first air dielectric regions spatially configured towards the second top surface region;
a bonding structure coupled to a top interconnect layer in the CMOS IC device region at the CMOS surface region;
one or more free standing MEMS structures overlying and adjacent to one or more portions of the first top surface region of the thickness of the first semiconductor substrate.
22. The device of claim 21 wherein the first semiconductor substrate is a buried oxide (BOX) layer overlying a silicon substrate or an epitaxial (EPI) layer overlying a silicon substrate.
23. The device of claim 21 wherein the bonding structure comprises a portion extending through the second semiconductor substrate.
24. The device of claim 21 wherein the bonding structure comprises a portion extending through the first semiconductor substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A dew-point instrument for measuring a dew point of a measurement space defined by a heat-insulating wall, the heat-insulating wall having a through-hole, the dew-point instrument comprising:
a main body part that is configured to encapsulate a working fluid therein to cause a heat-pipe phenomenon and that is disposed across the through-hole of the heat-insulating wall so as to be in both the measurement space and an external space that is outside of the measurement space, a temperature of the external space being lower than that of the measurement space; and
a first temperature deriving part for deriving a temperature of an evaporating section of the main body part, the evaporating section being where the working fluid evaporates due to the heat-pipe phenomenon, the temperature at the evaporating section being substantially equal to a dew point temperature of the measurement space.
2. The dew-point instrument according to claim 1, wherein the main body part is configured by a heat pipe.
3. The dew-point instrument according to claim 1, wherein the main body part is configured by a meandering capillary tube type heat pipe or an oscillating heat pipe.
4. The dew-point instrument according claim 1, wherein the first temperature deriving part derives the temperature of a section where the working fluid in liquid form accumulates when the heat-pipe phenomenon is completely caused in the main body part.
5. The dew-point instrument according to claim 1, further comprising:
second temperature deriving part for deriving a temperature of the main body part in a section where the working fluid in gaseous form is condensed; and
a computation unit that calculates a temperature difference between the temperature of the section in the main body part where the working fluid evaporates and the temperature of the section where the working fluid in gaseous form is condensed, based on a result of deriving the temperature by means of the first temperature deriving part and a result of deriving the temperature by means of the second temperature deriving part.
6. A temperature and humidity chamber that uses the dew- point instrument described in claim 1.