What is claimed is:
1. A disarm circuit comprising:
a semiconductor switch device discharging electric energy stored in an electric energy storage section by turning on the semiconductor switch device according to a control signal from a control circuit via a first resistor for disarming provided between one terminal of the electric energy storage section and a first terminal of the semiconductor switch device; and
a second resistor for limiting current which flows from one terminal of the electric energy storage section and for transmitting the current to a control terminal of the semiconductor switch device, the second resistor being provided between one terminal of the electric energy storage section and the control terminal of the semiconductor switch device.
2. A disarm circuit using a semiconductor switch device according to claim 1, further comprising:
at least a transformer;
a primary side area controlling current on the primary side of the transformer according to a control signal for controlling the semiconductor switch device, the primary area being provided on the primary side of the transformer;
a secondary side area directly driving the semiconductor switch device, the secondary side area being provided on the secondary side of the transformer,
wherein the primary side area receives a control signal, transmits power for controlling the semiconductor switch device to the secondary side area and inhibits back electromotive force caused when current that flows on a primary winding of the transformer is cut off.
3. A disarm circuit using a semiconductor switch device according to claim 2, wherein the secondary side area receives power supplied from the primary side area, transmits power for controlling the semiconductor switch device to the semiconductor switch and cuts off voltage caused by back electromotive force caused when current that flows on a primary winding of the transformer is cut off so that impedance is lower, compared with the second resistor.
4. A disarm circuit using a semiconductor switch device according to claim 3 further comprising:
a first Zener diode connected to a terminal at one end of a secondary winding of the transformer in the secondary side area;
a second Zener diode one of the two terminals of which is connected in face to face to the same kind terminal of the first Zener diode, the second Zener diode connected to a control terminal of the semiconductor switch device via a resistor, a terminal at the other end of the secondary winding of the transformer is connected to a second terminal of the semiconductor switch device; and
a capacitor connected between the second Zener diode and the second terminal of the semiconductor switch device.
5. A disarm circuit according to claim 1, wherein a plurality of the semiconductor switch devices are provided.
6. A disarm circuit according to claim 5, wherein the second resistor is respectively connected between one terminal of the electric energy storage section and each control terminal of the plural semiconductor switch devices.
7. A disarm circuit according to claim 6, further comprising:
a third resistor for equalizing the characteristics of the semiconductor switch devices, eliminating dispersion among the characteristics of respective semiconductor switch devices, the third resistor respectively connected between each first terminal and each second terminal of the plurality of semiconductor switch devices.
8. A disarm circuit according to claim 5, wherein the second resistor for a first stage is connected between one terminal of the electric energy storage section and a control terminal of the semiconductor switch device on the first stage, and another second resistors for limiting excessive current for a second or the subsequent stages are respectively connected between a second terminal of the semiconductor switch device and a control terminal of the semiconductor switch device of the next stage.
9. A disarm circuit using a semiconductor switch device according to claim 1, wherein the semiconductor switch device is an insulated gate bipolar transistor (IGBT), the first terminal functions corresponds to the collector, the second terminal functions corresponds to the emitter, the control terminal functions corresponds to the gate, and one terminal of the electric energy storage section is a positive terminal.
10. A disarm circuit using a semiconductor switch device according to claim 1, the semiconductor switch device is a N-channel MOSFET, the first terminal functions corresponds to the drain, the second terminal functions corresponds to the source, the control terminal functions corresponds to the gate, and one terminal of the electric energy storage section is a positive terminal.
11. A disarm circuit using a semiconductor switch device according to claim 1, wherein the semiconductor switch device is a P-channel MOSFET, the first terminal functions corresponds to the drain, the second terminal functions corresponds to the source, the control terminal functions as the gate, and one terminal of the electric energy storage section is a negative terminal.
12. An electrotherapy apparatus, comprising:
A disarm circuit including:
a semiconductor switch device discharging electric energy stored in an electric energy storage section by turning on the semiconductor switch device according to a control signal from a control circuit via a first resistor for disarming the electric energy storage section provided between one terminal of the electric energy storage section and a first terminal of the semiconductor switch device; and
a second resistor for limiting current which flows from one terminal of the electric energy storage section and for transmitting the current to a control terminal of the semiconductor switch device, the second resistor being provided between one terminal of the electric energy storage section and the control terminal of the semiconductor switch device;
an external discharging circuit that generates electric stimulation pulse and outputs electric energy to a living body;
an electric energy storage section; and
a charging circuit that charges the electric energy storage section.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A thin film essentially comprising aluminate as primary component and rare earth element.
2. A thin film according to claim 1, which essentially consists of the aluminate and the rare earth element.
3. A thin film according to claim 1, wherein the aluminate is selected form the group consisting of SrAl2O4, Sr4Al14O25 and CaAl2O4, and
the rare earth element contains either Dy or Nd and Eu.
4. A light-accumulation optical element comprising:
a thin film which comprises aluminate as primary component and rare earth element; and
a substrate which supports the thin film.
5. A light accumulation optical element according to claim 4, wherein the thin film essentially consists of the aluminate and the rare earth element.
6. A method for producing a light-accumulation optical element according to claim 5, the method comprising the steps of:
providing a raw material including aluminate and rare earth element on a magnetron cathode;
placing a substrate opposite the raw material; and
moving the raw material component onto the substrate via RF magnetron spattering.
7. A method according to claim 6, wherein the raw materials comprising:
an aluminate selected form a group consisting of SrAl2O4, Sr4Al14O25, and CaAl2O4;
Dy2O3 or Nd2O3; and
Eu2O3.
8. A method according to claim 6, wherein the raw material comprises a mixture of aluminate powder and rare earth element powder.
9. A method according to claim 6, wherein the raw material comprises a sintered plate of aluminate and pellets of rare earth element compound.
10. A method according to claim 6, wherein
a temperature of the substrate is maintained a range of 200 C. or higher but lower than 700 C. while the RF magnetron spattering is performed.
11. A method according to claim 6, wherein
the RF magnetron spattering is performed using argon gas containing 5% or more, but less than 50% oxygen or ozone.
12. A method according to claim 6, wherein
the RF magnetron spattering is performed using argon gas and supplying oxygen or ozone or ions thereof near the substrate.
13. A method according to claim 12, wherein the argon gas comprises either oxygen or ozone.
14. A method according to claim 13, further comprising the step of heating the thin film on the substrate after the RF magnetron spattering is performed.