1. A method of forming a semiconductor device comprising:
forming a replacement gate structure on a portion of a substrate, wherein source regions and drain regions are positioned on opposing sides of the replacement gate structure;
forming an intralevel dielectric on the substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure;
removing the replacement gate structure to provide an opening to an exposed portion of the substrate, wherein sidewalls of the opening are provided by sidewalls of a remaining portion of the intralevel dielectric;
forming a gate dielectric layer on at least the sidewalls of the opening and the exposed portion of the substrate;
damaging a majority of the gate dielectric layer that is present on the sidewalls of the opening with an angled ion implantation, wherein a non-damaged portion of the gate dielectric layer is present at a base of the opening;
removing the damaged portion of the gate dielectric layer selectively to the non-damaged portion of the gate dielectric layer; and
forming a gate conductor of a functioning gate structure within the opening on the non-damaged portion of the gate dielectric layer.
2. The method of claim 1, wherein the gate dielectric layer is composed of a high-k dielectric material.
3. The method of claim 1, wherein a spacer is present in direct contact with the sidewalls of the intralevel dielectric layer, and the gate dielectric layer is in direct contact with the spacer.
4. The method of claim 3, wherein the spacer is formed on a sidewall of the replacement gate structure prior to the forming of the intralevel dielectric, or the spacer is formed after on the sidewall of the intralevel dielectric after the replacement gate structure is removed and before the gate dielectric layer is formed.
5. The method of claim 1, further comprising forming interconnects through the intralevel dielectric layer to at least one of the source region and the drain region.
6. The method of claim 1, wherein the forming of the intralevel dielectric on the substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure comprises depositing the intralevel dielectric over the substrate and the replacement gate structure, and planarizing the intralevel dielectric until the upper surface of the replacement gate structure is exposed.
7. The method of claim 1, wherein the removing of the replacement gate structure to provide an opening to the exposed portion of the substrate comprises an etch that removes the replacement gate structure selective to the intralevel dielectric and the exposed portion of the substrate.
8. The method of claim 3, wherein the forming of the gate dielectric layer further comprises forming an interfacial dielectric layer on the exposed portion of the substrate, and forming the gate dielectric layer in direct contact with the interfacial dielectric.
9. The method of claim 3, wherein the forming of the gate dielectric layer comprises a conformal deposition on the sidewalls of the opening, the exposed portion of the substrate, and an upper surface of the intralevel dielectric layer.
10. The method of claim 2, wherein the high-k dielectric material comprises a hafnium-containing material.
11. The method of claim 1, wherein the damaging of the majority of the gate dielectric layer that is present on the sidewalls of the opening with an angled ion implantation comprises implantation of at least one dopant from the group consisting of H, He, Ne, C, O, F, B, P, Ar, Si, including isotopes thereof, and combinations thereof.
12. The method of claim 1, wherein the damaging of the majority of the gate dielectric that is present on the sidewalls of the opening with an angled ion implantation comprises an ion dosage from 1\xd71014 atomscm2 to 3\xd71016 atomscm2.
13. The method of claim 1, wherein the damaging of the majority of the gate dielectric layer that is present on the sidewalls of the opening with an angled ion implantation comprises an ion implantation apparatus that operates at a beam current density from 0.05 milliamps cm\u22122 to 50 milliamps cm\u22122 and at an energy from 3 keV to 250 keV.
14. The method of claim 1, wherein the angled ion implantation comprises a vector by which ions are traveling to contact a surface being damaged at a contact angle of less than 85\xb0.
15. The method of claim 1, wherein the removing of the damaged portion of the gate dielectric layer selectively to the non-damaged portion of the gate dielectric layer comprises an etch that has a selectivity greater than 100:1 for removing the damaged portion of the gate dielectric layer to the non-damaged portion of the gate dielectric layer.
16. The method of claim 1, wherein the non-damaged portion of the gate dielectric layer provides a gate dielectric for the functional gate structure, wherein the gate dielectric of the functional gate structure is in contact with the gate conductor of the functional gate structure, and the gate dielectric is in direct contact with sidewalls of the gate conductor for a dimension that is less than \xbc the height of the gate structure.
17. A semiconductor device comprising:
a gate structure on a semiconductor substrate, the gate structure comprised of a gate conductor and a high-k gate dielectric layer, wherein the high-k gate dielectric layer is in contact with the base of the gate conductor and on the sidewalls of the gate conductor for a dimension less than \xbc the gate structure’s height; and
source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.
18. The semiconductor device of claim 17, wherein the high-k gate dielectric layer is comprised of hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate or a combination thereof.
19. The semiconductor device of claim 17, wherein the gate conductor is composed of a metal or doped semiconductor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of operating a portable electronic device including a display screen, a user interface, a controller, a memory and a transceiver, the method comprising:
monitoring external communications of the portable electronic device to determine when the portable electronic device has downloaded a resource, wherein the resource is an executable application program or an item of content;
creating a database record that associates a network address of a remote server from which the resource was downloaded with the resource;
executing the resource on the controller;
receiving a snapshot command through the user interface; and
in response to the snapshot command:
determining if the resource executing on the controller is an application program or item of content;
capturing a snapshot image of the resource;
obtaining the network address of the remote server from which the resource was downloaded from the database record for the resource;
building a metadata field containing the network address of the remote server from which the resource was downloaded; and
storing the metadata field in the snapshot image.
2. The method of claim 1, wherein obtaining the network address comprises determining a uniform resource indicator (URI) associated with the remote server.
3. The method of claim 2, wherein obtaining the network address comprises retrieving a URI from a table of URI entries associated with resources stored in the portable electronic device andor retrieving the URI from the resource.
4. The method of claim 1, wherein the metadata field is an Exif metadata field.
5. The method of claim 1, further comprising:
receiving a forward command through the user interface; and
in response to the forward command, transmitting the snapshot image to a remote terminal using the transceiver.
6. The method of claim 1, further comprising:
generating a database including the created database records for all resources stored on the electronic device.
7. The method of claim 1, wherein the snapshot image for an application program comprises a screenshot image of content generated by the application program and displayed within the user interface, and wherein the snapshot image for an item of content comprises a thumbnail image of the item of content.
8. The method of claim 7, wherein the screenshot image of content generated by the application program comprises a still image andor a video image.
9. A portable electronic device, comprising:
a display screen configured to display still andor video images;
a user interface configured to receive a user input;
a transceiver configured to establish a wireless communications link with a remote server and to download a resource that includes an executable application and an item of content from the remote server; and
a controller configured to monitor external communications of the portable electronic device to determine when the resource is downloaded to the portable external communications device, to execute the resource, to receive a snapshot command through the user interface during execution of the resource, and in response to the snapshot command, to determine if the resource executing on the controller is the executable application or the item of content, to capture a snapshot image of the resource, to determine a network address of the remote server from which the resource was downloaded from a database record that associates the network address of the remote server from which the resource was downloaded with the resource, to build a metadata field that contains the network address of the remote server from which the resource was loaded and to store, in a memory of the portable electronic device, the metadata field in the snapshot image.
10. The portable electronic device of claim 9, the controller is configured to determine the network address by retrieving a uniform resource indicator (URI) from a table of URI entries associated with resources stored in the portable electronic device.
11. The portable electronic device of claim 9, wherein the snapshot image of the resource comprises an image displayed on the display screen, and the controller is configured to generate metadata including the network address and to include the metadata in the snapshot image.
12. The portable electronic device of claim 9, wherein the controller is further configured to receive a forward command through the user interface, and in response to the forward command, to transmit the snapshot image to a remote terminal using the transceiver.
13. The portable electronic device of claim 9, wherein the controller is further configured to store the network address of the remote server in a database, and to associate the network address with the resource in the database.