1. A door weather strip for sealing between a door of a motor vehicle and a door opening portion of a vehicle body of the motor vehicle, the door weather strip being adapted to be attached to an outer periphery of a door frame of the door and comprising:
an upper side section formed by extrusion and adapted to be attached to an upper side of the door frame, a vertical side section formed by extrusion and adapted to be attached to a vertical side of the door frame, and a molded corner section adapted to join said upper side section and said vertical side section to each other, wherein
each of said upper side section and an upper side part of said corner section includes an exterior weather strip adapted to be attached to an exterior part of the door frame to provide a seal with an exterior part of the door opening portion, an interior weather strip adapted to be attached to an interior part of the door frame to provide a seal with an interior part of the door opening portion, and a connecting section for integrally connecting said exterior weather strip and said interior weather strip to each other,
each of said exterior weather strips includes an exterior base portion made of a sponge material for attachment to one of the door frame and a door molding and includes an exterior seal portion for contacting the door opening portion when the door is closed, and each of said interior weather strips includes an interior base portion made of the sponge material for attachment to the door frame and includes an interior seal portion for contacting the door opening portion when the door is closed,
said door weather strip further comprises a reinforcing rib formed in a rear surface of said exterior base portion of said upper side part of said corner section,
said exterior base portion of each of said upper side section and said upper side part of said corner section has an exterior engaging part and an interior engaging part both formed of the sponge material, said exterior and interior engaging parts of the upper side part of said corner section extend along a longitudinal direction of said rear surface of said exterior base portion and project downwardly and said exterior and interior engaging parts of the upper side section extend along a longitudinal direction of said upper side section and project downwardly, and
sub-reinforcing ribs are formed along an interior side surface of said interior engaging part of said exterior base portion of said upper side part of said corner section, said interior engaging part of said upper side part of said corner section having an end comprising a joint connected to said connecting section of said upper side part of said corner section, wherein each of said ribs projects from a root of said joint.
2. The door weather strip as claimed in claim 1, wherein said reinforcing rib has a lattice-shaped configuration.
3. The door weather strip as claimed in claim 1, wherein said reinforcing rib includes a plurality of ribs each extending in a width direction of said rear surface of said exterior base portion of said upper side part of said corner section.
4. The door weather strip as claimed in claim 1, wherein said corner section is composed of the sponge material and has a Young’s modulus ranging from 0.84 to 0.88 and a specific gravity ranging from 0.61 to 0.65.
5. The door weather strip as claimed in claim 1, wherein each of said exterior seal portions is composed of the sponge material and has a lip-shaped configuration, and each of said interior seal portions is composed of the sponge material and has a tubular configuration.
6. The door weather strip as claimed in claim 1, wherein at least one part of said exterior base portion of said upper side section and said interior base portion of said upper side section is composed of a solid material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus comprising:
a second conductive type well over a substrate; and
a laterally diffused metal oxide semiconductor device comprising a drain over said substrate, a field oxide at one side of the drain, a first conductive type impurity layer over the substrate and under the drain, and a second conductive type impurity layer between said first conductive type impurity layer and said field oxide.
2. The apparatus of claim 1, wherein said first conductive type impurity layer and said second conductive type impurity layer comprise a plurality of first and second conductive type impurity layers.
3. The apparatus of claim 2, wherein said plurality of first and second conductive type impurity layers are disposed at a predetermined interval.
4. The apparatus of claim 2, comprising a first conductive P-type body at one side of said field oxide, wherein at least one of said plurality of first conductive type impurity layers and said plurality of second conductive type impurity layers decrease in size as a distance from said P-type body increases.
5. The apparatus of claim 2, comprising a first conductive P-type body at one side of said field oxide, wherein at least one of said plurality of first conductive type impurity layers and said plurality of second conductive type impurity layers increase in size as a distance from said P-type body increases.
6. The apparatus of claim 2, comprising a first conductive P-type body at one side of said field oxide, wherein the size of at least one of said plurality of first conductive type impurity layers and said plurality of said second conductive type impurity layers remains substantially constant as a distance from said P-type body increases.
7. An apparatus comprising:
a second conductive type well over a substrate;
a gate electrode over the substrate;
a first conductive type body comprising a source region at one side of said gate electrode;
a drain region at an opposite side of said gate electrode;
a field oxide between said source region and said drain region;
a first conductive type top region over said second conductive type well under said field oxide; and
a second conductive type top region between said field oxide and said first conductive type top region.
8. The apparatus of claim 7, wherein said first conductive type top region and said second conductive type top region comprise a plurality of first and second conductive type top regions.
9. The apparatus of claim 8, wherein said plurality of first conductive type top regions comprise different sizes at a predetermined interval.
10. The apparatus of claim 9, wherein said plurality of first conductive type top regions decrease in size as a distance from said first conductive type body increases.
11. The apparatus of claim 9, wherein said plurality of first conductive type top regions increase in size as a distance from said first conductive type body increases.
12. The apparatus of claim 8, wherein said plurality of first conductive type top regions are substantially the same size at a predetermined interval.
13. The apparatus of claim 8, wherein said plurality of second conductive type top regions comprise different sizes at a predetermined interval.
14. The apparatus of claim 13, wherein said plurality of second conductive type top regions decrease in size as a distance from said first conductive type body increases.
15. The apparatus of claim 13, wherein said second conductive type top regions increase in size as a distance from said first conductive type body increases.
16. The apparatus of claim 7, wherein said first conductive type comprises a P-type and said second conductive type comprises an N-type.
17. A method comprising:
forming a second conductive type well over a substrate;
forming at least one of a first conductive type top region and a second conductive type top region by implanting at least one of first conductive type impurities and second conductive type impurities over said second conductive type well under a region where a field oxide is to be formed; and
forming at least one of a first conductive type body and a field oxide over said second conductive type well.
18. The method of 17, wherein forming said at least one first conductive type top region and second conductive type top region comprises:
coating a photoresist pattern to open a region where said field oxide is to be formed; and
performing a plurality of ion implantation processes using said photoresist pattern as an ion implantation mask.
19. The method of claim 18, wherein said photoresist pattern comprises a pattern configured to allow said first conductive type top region and said second conductive type top region to be separately formed in plurality.
20. The method of claim 17, wherein said second conductive top region is formed between said first conductive type top region and said field oxide.