1. A magneto-resistive effect device comprising:
a stacked body; and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide, and
a crystalline structure of the metal oxide being a NaCl structure.
2. The device according to claim 1, wherein the oxide layer includes at least one material selected from the group consisting of iron, cobalt, nickel, manganese, titanium, vanadium, zinc, silver, palladium, platinum, ruthenium, samarium, tantalum, and cadmium.
3. The device according to claim 2, wherein the oxide layer includes iron.
4. The device according to claim 1, wherein a crystalline orientation of the oxide layer is a (111) plane orientation.
5. The device according to claim 1, wherein a crystalline orientation dispersion angle of the oxide layer is not more than 5\xb0.
6. The device according to claim 1, wherein a thickness of the oxide layer is not less than 0.5 nm and not more than 4 nm.
7. The device according to claim 1, wherein the spacer layer includes
an insulating member having through-holes formed therein, and
conductive members embedded in the through-holes.
8. The device according to claim 1, wherein the spacer layer includes
an upper metal layer, and
a lower metal layer, wherein
the oxide layer is formed between the upper metal layer and the lower metal layer.
9. The device according to claim 1, wherein a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer are rotatable by an external magnetic field.
10. A magnetic head assembly comprising:
a magneto-resistive effect device;
a suspension having the magneto-resistive effect device mounted on a first end thereof; and
an actuator arm connected to a second end of the suspension,
the magneto-resistive effect device including
a stacked body and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide, and
a crystalline structure of the metal oxide being a NaCl structure.
11. A magnetic recording device comprising:
a magnetic head assembly including
a magneto-resistive effect device,
a suspension having the magneto-resistive effect device mounted on a first end thereof, and
an actuator arm connected to a second end of the suspension; and
a magnetic recording media on which data is recorded using the magneto-resistive effect device mounted on the magnetic head assembly,
the magneto-resistive effect device including
a stacked body, and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide, and
a crystalline structure of the metal oxide being a NaCl structure.
12. A magneto-resistive effect device comprising:
a stacked body; and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide,
a crystalline structure of the metal oxide being a spinel structure, and
the metal oxide includes divalent metal ions.
13. The device according to claim 12, wherein the oxide layer includes at least one metal selected from the group consisting of iron, cobalt, and nickel, and at least one material selected from the group consisting of zinc, cadmium, stannous, and indium.
14. The device according to claim 13, wherein the oxide layer includes iron and zinc.
15. The device according to claim 14, wherein a zinc concentration in the metal material included in the oxide layer is, in terms of atomic percentages, not less than 0.5 at. % and not more than 50 at. %.
16. A magnetic head assembly comprising:
a magneto-resistive effect device;
a suspension having the magneto-resistive effect device mounted on a first end thereof; and
an actuator arm connected to a second end of the suspension,
the magneto-resistive effect device including
a stacked body, and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide,
a crystalline structure of the metal oxide being a spinel structure, and
the metal oxide including divalent metal ions.
17. A magneto-resistive effect device comprising:
a stacked body; and
a pair of electrodes for supplying current in a stacking direction of the stacked body,
the stacked body including
a first magnetic layer,
a second magnetic layer, and
a spacer layer disposed between the first magnetic layer and the second magnetic layer,
at least one of the first magnetic layer, the second magnetic layer, and the spacer layer including an oxide layer formed from a metal oxide,
the oxide layer including iron, and
a crystalline orientation of the oxide layer being a (111) plane orientation and an interplanar spacing of the (111) plane being not less than 0.242 nm.
18. The device according to claim 17, wherein a crystalline orientation dispersion angle of the oxide layer is not more than 5\xb0.
19. The device according to claim 17, wherein a thickness of the oxide layer is not less than 0.5 nm and not more than 4 nm.
20. The device according to claim 17, wherein the spacer layer includes
an insulating member having through-holes formed therein, and
conductive members embedded in the through-holes.
21. The device according to claim 17, wherein the spacer layer includes
an upper metal layer, and
a lower metal layer,
the oxide layer being formed between the upper metal layer and the lower metal layer.
22. The device according to claim 17, wherein a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer are rotatable by an external magnetic field.
23. A magneto-resistive effect device being a spin accumulation type magneto-resistive effect device including a non-magnetic layer, a magnetization fixed layer provided on a first region of the non-magnetic layer and having magnetization fixed in one direction, and a magnetization free layer provided on a second region of the non-magnetization layer and having magnetization changing in response to an external magnetic field, supplying a current between the non-magnetic layer and the magnetization fixed layer, and measuring a voltage between the non-magnetic layer and the free layer,
an oxide layer composed of metal oxide to be provided between the non-magnetic layer and the magnetization fixed layer, provided between the non-magnetic layer and the magnetization free layer, provided in the magnetization fixed layer, provided in the magnetization free layer,
a crystalline structure of the metal oxide being a NaCl structure.
24. The device according to claim 23, wherein the oxide layer includes at least one material selected from the group consisting of iron, cobalt, nickel, manganese, titanium, vanadium, zinc, silver, palladium, platinum, ruthenium, samarium, tantalum, and cadmium.
25. The device according to claim 23, wherein the oxide layer includes iron.
26. The device according to claim 23, wherein a crystalline orientation of the oxide layer is a (111) plane orientation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A black color material comprising a condensation product of a pyrrole compound represented by the following formula (1) and a squaric acid represented by the following formula (2):
2. The black color material as claimed in claim 1, wherein the condensation product is synthesized in a water-containing reaction solvent.
3. A toner comprising the black color material as claimed in claim 1.
4. A toner comprising the black color material as claimed in claim 2.