1. An apparatus comprising:
a ring of magnetic material;
a source for applying a setting magnetic field to the ring, wherein the setting magnetic field is applied across the ring and in a direction in a plane of the ring; and
first and second electrodes for applying an electric current to the ring.
2. The apparatus of claim 1, further comprising: a layer of electrically insulating material between first and second portions of the ring forming a first magnetic junction.
3. The apparatus of claim 2, wherein the first and second portions overlap each other adjacent to the magnetic junction.
4. The apparatus of claim 2, further comprising:
a second magnetic junction positioned in the ring.
5. The apparatus of claim 1, wherein the source comprises:
a wire positioned adjacent to the ring, wherein an electric current in the wire subjects the ring to the setting magnetic field of sufficient strength to saturate the ring.
6. The apparatus of claim 1, further comprising:
a first ring of non-magnetic electrically conductive material positioned parallel to the ring of magnetic material.
7. The apparatus of claim 6, further comprising:
a second ring of non-magnetic material positioned parallel to the ring of magnetic material and on the opposite side of the ring of magnetic material from the first ring of non-magnetic material.
8. The apparatus of claim 6, further comprising:
a second ring of magnetic material positioned parallel to the first ring of non-magnetic material.
9. The apparatus of claim 1, wherein the ring comprises:
a multilayer structure including magnetic and non-magnetic electrically conductive layers.
10. An apparatus comprising:
a magnetic recording medium;
a ring of magnetic material;
a source for applying a setting magnetic field to the ring, wherein the setting magnetic field is applied across the ring and in a direction in a plane of the ring; and
first and second electrodes for applying an electric current to the ring to create a precessing magnetic field for switching directions of magnetization of domains in the recording medium.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A chemical vapor deposition precursor comprising an organosiloxane, the organosiloxane comprising at least 80 weight percent of Formula I: Y0.01-1.0SiO1.5-1.99aZ0.0-1.0SiO1.5-1.99bH0.01-1.0SiO1.5-1.99cwhere Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.
2. The organosiloxane of claim 1 wherein said Y is selected from phenyl, benzyl, substituted phenyl, naphthyl, anthryl, and phenanthryl, wherein Y and Z are different.
3. The organosiloxane of claim 1 wherein said Z is selected from vinyl, substituted vinyl, vinyl ether, aciylate, and merhacrylate.
4. A film comprising said chemical vapor deposition precursor of claim 1.
5. A hardmask comprising the organosiloxane of claim 1.
6. The hardmask of claim 5 additionally comprising solvent.
7. The hardmask of claim 6 wherein said solvent is cyclohexanone or propylene glycol methyl ether acetate.
8. An etch stop comprising the organosiloxane of claim 1.
9. The etch stop of claim 8 additionally comprising solvent.
10. The etch stop of claim 9 wherein said solvent is cyclohexanone or propylene glycol methyl ether acetate.
11. A semiconductor device comprising said film of claim 4 and additionally comprising a second film that is adjacent to said first film.
12. The semiconductor device of claim 11 wherein said film is an inorganic material.
13. The semiconductor device of claim 11 wherein said second film is an organic material.
14. The semiconductor device of claim 13 wherein said organic material comprises aromatic or aliphatic hydrocarbon.
15. The semiconductor device of claim 13 wherein said organic material comprises adamantane or diamantane based material.
16. The semiconductor device of claim 11 having a dielectric constant of less than 3.2.
17. A method of film formation comprising the step of:
depositing a composition of at least 80 weight percent of Formula I:
Y0.01-1.0SiO1.5-1.99aZ0.01-1.0SiO1.5-1.99bH0.01-1.99SiO1.5-1.99c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I onto a substrate, wherein Y and Z are different.
18. The method of claim 17 wherein said depositing comprises chemical vapor deposition.
19. The method of claim 17 additionally comprising subjecting said deposited composition to thermal energy, microwave radiation, ultraviolet radiation, or electron beam radiation.