1. A method for fabricating a CMOS image sensor, comprising:
forming a photodiode area in an active area of a semiconductor substrate at a first side of a first gate electrode, the semiconductor substrate having the first gate electrode and a second gate electrode thereon defining a transistor area, and a dielectric layer over the semiconductor substrate, the first gate electrode and the second gate electrode;
forming an oxide layer over the photodiode area, the oxide layer having a thickness greater than that of the dielectric layer;
forming a sourcedrain extension area in the semiconductor substrate at a second side of a second gate electrode and between the first and second gate electrodes;
forming sourcedrain regions in the transistor area of the semiconductor substrate by ion implantation through the dielectric layer; and
forming a complementary ion implantation region in the photodiode area through the oxide layer.
2. The method as claimed in claim 1, further comprising removing the dielectric layer from the photodiode area by wet etching.
3. The method as claimed in claim 1, wherein forming the oxide layer comprises thermal oxidation of the semiconductor substrate.
4. The method as claimed in claim 1, further comprising forming the dielectric layer by thermal oxidation of the semiconductor substrate and the first and second gate electrodes.
5. The method as claimed in claim 1, further comprising forming an isolation layer in the semiconductor substrate, defining the active area.
6. The method as claimed in claim 1, further comprising forming the first and second gate electrodes in the transistor area of the semiconductor substrate.
7. The method as claimed in claim 6, wherein the first and second gate electrodes comprise a transfer transistor and a reset transistor.
8. The method as claimed in claim 1, further comprising forming spacers on sidewalls of the first and second gate electrodes.
9. The method as claimed in claim 8, wherein the spacers are formed after forming the sourcedrain extension area and before forming the sourcedrain regions.
10. The method as claimed in claim 1, wherein the photodiode area is formed by ion implantation through the dielectric layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A display device comprising:
a microelectromechanical system (MEMS) display portion having rows and columns of MEMS elements; and
a plurality of MEMS switches formed as one or more additional rows or columns of additional MEMS elements adjacent to the MEMS elements of the display portion, wherein each MEMS switch is configured to selectively electrically connect one of the rows or one of the columns of the display portion to another circuit and to electrically tri-state the one row or column.
2. The device of claim 1, wherein the plurality of MEMS switches forms in part row or column select circuitry.
3. The device of claim 1, wherein the pitch of the MEMS switches substantially matches the pitch of the MEMS elements of the display portion.
4. The device of claim 1, wherein the MEMS switches and the MEMS elements of the display portion include collapsible cavities.
5. The device of claim 1, wherein the MEMS elements of the display portion each include an interferometric cavity.
6. The device of claim 1, wherein the MEMS switches and the MEMS elements of the display portion are at least partially formed with the same manufacturing operations.
7. The device of claim 1, wherein each MEMS switch includes a first terminal connected to one of the rows or one of the columns, a second terminal configured to be connected to another circuit, and a conductive strip configured to move between at least first and second positions.
8. The device of claim 7, wherein the conductive strip is electrically connected to the first and second terminals when in the first position.
9. The device of claim 8, wherein the conductive strip is electrically disconnected from the first and second terminals when in the second position.
10. The device of claim 1, wherein the MEMS switches are disposed adjacent to the display portion.
11. The device of claim 1, further comprising:
a processor that is in electrical communication with the display portion, the processor being configured to process image data; and
a memory device in electrical communication with the processor.
12. The device of claim 11, further comprising:
a driver circuit configured to send at least one signal to the display portion; and
a controller configured to send at least a portion of the image data to the driver circuit.
13. The device of claim 11, further comprising an image source module configured to send the image data to the processor.
14. The device of claim 13, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.
15. The device of claim 11, further comprising an input device configured to receive input data and to communicate the input data to the processor.
16. A method of manufacturing a display device, the method comprising:
forming a microelectromechanical system (MEMS) display portion comprising rows and columns of MEMS elements; and
forming a plurality of MEMS switches as one or more additional rows or columns of additional MEMS elements adjacent to the MEMS elements of the display portion, wherein each MEMS switch is configured to selectively electrically connect one of the rows or one of the columns of the display portion to another circuit and to electrically tri-state the one row or column.
17. The method of claim 16, wherein the plurality of MEMS switches forms in part row or column select circuitry.
18. The method of claim 16, wherein the pitch of the MEMS switches matches the pitch of the MEMS elements of the display portion.
19. The method of claim 16, wherein the MEMS switches and the MEMS elements of the display portion include collapsible cavities.
20. The method of claim 16, wherein the MEMS elements of the display portion each include an interferometric cavity.
21. The method of claim 16, wherein the MEMS switches and the MEMS elements of the display portion are at least partially formed with the same manufacturing operations.
22. The method of claim 16, wherein forming the plurality of MEMS switches includes forming a first terminal connected to one of the rows or one of the columns, forming a second terminal configured to be connected to another circuit, and forming a conductive strip configured to move between at least first and second positions.
23. The method of claim 22, wherein the conductive strip is electrically connected to the first and second terminals when in the first position.
24. The method of claim 23, wherein the conductive strip is electrically disconnected from the first and second terminals when in the second position.