What is claimed is:
1. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section, wherein
when growing the layer on the upper clad layer from a crystal interface where crystal composition on the upper clad layer of the light-emitting section changes in a lattice mismatching state in which the absolute value of a lattice matching factor aa between fore and hind crystals of the crystal interface is not lower than 0.25%, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
2. A method for producing a semiconductor light-emitting device as claimed in claim 1, wherein
the layer grown on the upper clad layer of the light-emitting section includes at least one of a current diffusion layer and a current stopping layer.
3. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
4. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
5. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between the valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer is satisfied in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
6. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
7. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
8. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
9. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
10. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
11. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
12. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current is stopping layer.
13. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
14. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
15. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein
the intermediate layer is comprised of two or more layers.
16. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the intermediate layer is comprised of two or more layers.
17. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the intermediate layer is comprised of two or more layers.
18. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the intermediate layer is comprised of two or more layers.
19. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the intermediate layer is comprised of two or more layers.
20. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the intermediate layer is comprised of two or more layers.
21. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
22. A method for producing a semiconductor light-emitting device as claimed in claim 18, wherein when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
23. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
24. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 pinh except when starting the growth.
25. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
26. A method for producing a semiconductor light-emitting device as claimed in claim 23, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 nh except when starting the growth.
27. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AlxGa1-x)yIn1-yP (0x1, 0y1).
28. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x) yIn1-yP (0x1, 0y1).
29. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1)
30. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
31. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
32. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
33. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
34. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
35. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
36. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
37. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
38. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of obtaining altitude-related data along roads, the method comprising the steps of:
traveling along roads in a vehicle;
determining a first absolute position of the vehicle at a first position along one of the roads;
determining a second absolute position of the vehicle at a second position along one of the roads; and
determining altitude-related data as a function of a horizontal difference between the first absolute position and the second absolute position and a distance traveled by the vehicle between the first position and the second position.
2. The method of claim 1 wherein the altitude-related data includes a change of altitude between the first position and the second position.
3. The method of claim 2 wherein the change of altitude between the first position and the second position is determined by:
determining a square of the horizontal difference between the first absolute position and the second absolute position;
determining a square of the distance traveled by the vehicle between the first position and the second position; and
determining a square root of the square of the distance traveled by the vehicle between the first position and the second position minus the square of the horizontal difference between the first absolute position and the second absolute position.
4. The method of claim 2 wherein the change of altitude between the first position and the second position is equal to a square root of a difference between the square of the horizontal difference between the first absolute position and the second absolute position and the square of the distance traveled by the vehicle between the first position and the second position.
5. The method of claim 1 wherein the altitude-related data includes an altitude at the second position.
6. The method of claim 5 further comprising:
determining a change of altitude between the first position and the second position; and
determining the altitude at the second position by adding the change of altitude to a known altitude of the first position.
7. The method of claim 1 wherein the altitude-related data includes a grade between the first position and the second position.
8. The method of claim 1 further comprising:
manually selecting the first position and the second position.
9. The method of claim 1 wherein the first position and the second position are selected automatically by comparing the horizontal difference between the first absolute position and the second absolute position to the distance traveled by the vehicle between the first position and the second position.
10. The method of claim 1 further comprising:
using a device to select the first position and the second position, wherein the device is responsive to starting and ending points of slope changes.
11. The method of claim 10 wherein the device is a barometer.
12. The method of claim 10 wherein the device is an inclinometer.
13. The method of claim 1 wherein the first absolute position and the second absolute position are determined using a DGPS unit.
14. The method of claim 1 wherein the first absolute position and the second absolute position are determined using a GPS unit.
15. The method of claim 1 wherein the distance traveled by the vehicle between the first position and the second position is determined using an odometer.
16. The method of claim 1 wherein the difference traveled by the vehicle between the first position and the second position is determined using a speed pulse sensor.
17. The method of claim 1 wherein the first absolute position corresponds to the geographic coordinates of the first position and the second absolute position corresponds to the geographic coordinates of the second position.
18. The method of claim 17 wherein the geographic coordinates include latitude and longitude.
19. The method of claim 1 wherein the first absolute position and the second absolute position are determined while the vehicle is moving along said one of the roads.
20. A method of obtaining altitude-related data along roads, the method comprising the steps of:
traveling along roads is a vehicle;
determining a first absolute position of the vehicle at a first position along one of the roads;
determining a second absolute position of the vehicle at a second position along one of the roads; and
determining altitude-related data as a function of a difference between a horizontal component of the first absolute position and a horizontal component of the second absolute position and a distance traveled by the vehicle between the first position and the second position.
21. The method of claim 20 further comprising:
determining that the first position is a start of a slope and that the second position is an end of the slope when the distance traveled by the vehicle exceeds the difference between the horizontal component of the first absolute position and the horizontal component of the second absolute position.