What is claimed is:
1. A wrong operation preventing circuit for preventing the wrong operation of semiconductor unit including memory and CPU from happening, comprising:
a detection use memory cell section serving as a judgement object of said wrong operation, which is installed at said memory and is formed from at least one memory cell;
a bit line which is connected with said detection use memory cell section and is added by pre-charge voltage synchronizing with clock signal;
a voltage detection section for detecting the dropping of said pre-charge voltage added on said bit line;
a operation judgement section which outputs a reset signal to said CPU when the dropping voltage detected by said voltage detection section is bigger than a predetermined value.
2. The wrong operation preventing circuit according to claim 1,
wherein said detection use memory cell section is any one of memory cell portions used for forming said memory.
3. The wrong operation preventing circuit according to claim 1,
wherein said detection use memory cell section is a memory cell portion newly formed at said memory for detection exclusive use.
4. The wrong operation preventing circuit according to claim 1,
wherein said bit line has a longest length than other bit lines connected with said memory.
5. The wrong operation preventing circuit according to claim 1,
wherein said bit line has a delay element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for depositing a solid film onto a substrate from a reagent solution comprising the steps of:
a. providing a supply of aqueous reagent solution maintained in a holding tank at a first temperature at which homogeneous reactions are substantially inhibited within said reagent solution, said reagent solution further containing at least two ligands;
b. dispensing a controlled flow of said reagent solution from a showerhead assembly, said controlled flow being periodically replenished;
c. positioning said substrate to receive at least a portion of said controlled flow of said reagent over a selected area of said substrate;
d. providing a raised structure peripheral to said selected area whereby a controlled volume of said reagent solution may be maintained upon said substrate while excess solution may be recirculated to said holding tank; and,
e. heating said substrate and said controlled volume of said reagent solution upon said substrate to a second temperature, higher than said first temperature, whereby deposition of a desired solid phase onto said substrate from said reagent solution may be initiated.
2. The method of claim 1 wherein said solid film comprises a compound of a metal and a Group VI element and said reagent solution comprises a salt of said metal and a compound containing said Group VI element, and said at least two ligands are capable of forming a stable complex with said metal.
3. The method of claim 2 wherein said metal is selected from the group consisting of: Cd; Cu; In; Al; Mn; and Zn.
4. The method of claim 2 wherein said Group VI element is selected from the group consisting of: O; S; and Se.
5. The method of claim 2 wherein said at least two ligands are selected from the group consisting of: acetic acid; triethanolamine; citric acid; potassium nitrilotriacetate; sodium citrate; ammonium hydroxide; and hydantoin.
6. The method of claim 1 wherein said second temperature is at least 60\xb0 C. higher than said first temperature.
7. The method of claim 1 wherein said controlled volume divided by said selected area of said substrate is characterized by a volume-to-surface area ratio of 0.1 to 100 mm.
8. The method of claim 7 wherein said volume-to-surface ratio is 0.1 to 10 mm.