What is claimed is:
1. An apparatus for controlling an electrical device using a bio-signal extracted from the movement of a user’s face, comprising:
a bio-signal detection means for detecting the bio-signals generated when the user shuts hisher mouth and when the user moves hisher head left and right; and
a means for controlling the electrical device for analyzing the bio-signal detected in the bio-signal detection means to control the electrical device according to a command of the user.
2. An apparatus for controlling an electrical device using a bio-signal extracted from the movement of a user’s face, comprising:
a bio-signal detection unit for detecting the bio-signal when the user shuts hisher mouth and when the user moves hisher head left and right;
a bio-signal amplification unit for amplifying the amount of the bio-signal detected in the bio-signal detection unit;
an AD converter for converting the amplified bio-signal into the bio-signal of a digital mode;
a control unit for analyzing the bio-signal of the digital mode to determine a corresponding command of the user and then generating a predetermined command of the user; and
a transmission unit for transmitting the determined command to the electrical device via infrared signal.
3. The apparatus as claimed in claim 2, wherein if the user shuts hisher mouth twice, the control mode of the electrical device is switched from an inactive (OFF) mode to an active (ON) mode or from the active mode (ON) to the inactive mode (OFF), if the user moves hisher head left (right), left (right) movement is made between command items of the electrical device, and if the user shuts hisher mouth once, the predetermined command item is selected.
4. The apparatus as claimed in claim 2, wherein the left (right) movement between the command items of the electrical device is performed only when the user moves hisher head from the center to the left (right) side.
5. The apparatus as claimed in claim 2, wherein the bio-signal detection unit has a predetermined number of electrodes attached to the user’s body portion.
6. The apparatus as claimed in claim 5, wherein the body portion is the forehead of the user.
7. The apparatus as claimed in claim 5, wherein the number of the electrode is two.
8. The apparatus as claimed in claim 7, wherein the two electrodes are positioned under International 10-20 System of Electrode Placement.
9. The apparatus as claimed in claim 8, wherein the two electrodes are positioned at Fp1 and Fp2 locations of the forehead of the user.
10. A method for controlling an electrical device using a bio-signal extracted from the movement of a user’s face, comprising the steps of:
detecting the bio signals generated when the user shuts hisher mouth and when the user moves hisher head left and right; and
analyzing the bio-signal detected in the bio-signal detection means to control the electrical device according to a command of the user.
11. A method of controlling an electrical device using a bio-signal extracted from the movement of a user’s face, comprising the steps of:
detecting the bio-signal when the user shuts hisher mouth and when the user moves hisher head left and right;
amplifying the amount of the detected bio-signal and then converting the amplified bio-signal into the bio-signal of a digital mode;
analyzing the converted bio-signal to determine a corresponding command of the user and then generating the determined command; and
transmitting the generated command to the electrical device via infrared rays.
12. The method as claimed in claim 11, wherein if the user shuts hisher mouth twice, the control mode of the electrical device is switched from an inactive (OFF) mode to an active (ON) mode or from the active mode (ON) to the inactive mode (OFF), if the user moves hisher head left (right), left (right) movement is made between command items of the electrical device, and if the user shuts hisher mouth once, the predetermined command item is selected.
13. The method as claimed in claim 12, wherein the left (right) movement between the command items of the electrical device is performed only when the user moves hisher head from the center to the left (right) side.
14. The method as claimed in claim 11, wherein the step of analyzing further includes an initialization step of obtaining a time period and an average increasedecrease amount of the signal suitable for the user since the moving speed and angle of the head are different depending on users.
15. The method as claimed in claim 11, wherein the step of analyzing further includes an initialization step of setting the reference value and the length of the signal suitable for the user since the time and strength of the users who shut hisher mouth are different.
16. The method as claimed in claim 11, wherein the bio-signal is extracted from a predetermined number of electrodes attached to the user’s body portion.
17. The method as claimed in claim 16, wherein the body portion is the forehead of the user.
18. The method as claimed in claim 16, wherein the number of the electrode is two.
19. The method as claimed in claim 18, wherein the two electrodes are positioned under International 10-20 System of Electrode Placement.
20. The method as claimed in claim 19, wherein the two electrodes are positioned at Fp1 and Fp2 locations of the forehead of the user.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system including an integrated circuit, comprising:
a conductive plug formed within an insulating layer, the conductive plug having a first width at an upper surface thereof;
an isolation layer over the conductive plug and the insulating layer, wherein the isolation layer has an opening formed over the conductive plug, the opening having a second width smaller than the first width; and
a plurality of conductive lines overlying the isolation layer, one of the conductive lines making electrical contact to the conductive plug through the opening.
2. The system of claim 1, wherein the conductive plug comprises tungsten.
3. The system of claim 1, wherein the isolation layer has a thickness between about 5 nm and 100 nm.
4. The system of claim 1, wherein the isolation layer has a thickness between about 10 nm and 50 nm.
5. The system of claim 1, wherein the metal line comprises aluminum.
6. The system of claim 1, wherein the isolation layer comprises TEOS.
7. The system of claim 1, wherein the isolation layer comprises silicon nitride.
8. The system of claim 1, wherein the first width of the conductive plug is between about 50 nm and about 300 nm.
9. The system of claim 1, wherein the conductive line has a width between about 100 nm and about 120 nm and is narrower than the first width.
10. The system of claim 1, further comprising an upper insulating layer overlying the isolation layer, the upper insulating layer electrically separating the conductive lines from one another.
11. The system of claim 1, wherein the conductive lines comprises aluminum.
12. The system of claim 11, wherein the conductive lines further comprises a titanium layer and a titanium nitride layer.
13. The system of claim 1, wherein one of the conductive lines is separated from an adjacent one of the conductive lines by less than about 110 nm.
14. The system of claim 1, wherein the one of the conductive lines includes an integral lower extension in the opening.
15. A method of forming an integrated circuit, comprising:
forming an isolation layer over a plurality of conductive plugs;
forming a plurality of openings within the isolation layer, each opening exposing an upper surface of a corresponding one of the conductive plugs and having a width smaller than a corresponding width of the corresponding one of the conductive plugs;
filling the openings with metal; and
masking and etching the metal.
16. The method of claim 15, wherein forming the isolation layer comprises forming an oxide.
17. The method of claim 15, wherein forming the isolation layer comprises forming silicon nitride.
18. The method of claim 15, wherein forming the isolation layer comprises depositing a layer with a thickness between about 5 nm and 100 nm.
19. The method of claim 15, wherein filling comprises depositing aluminum.
20. The method of claim 15, wherein filling comprises blanket depositing a metal layer.
21. The method of claim 20 wherein etching comprises forming metal lines.
22. The method of claim 21, wherein depositing the metal layer comprises depositing aluminum.
23. The method of claim 21, further comprising depositing an insulating layer between the metal lines and above the isolation layer.
24. The method of claim 15, wherein forming the isolation layer comprises depositing the isolation layer directly over the conductive plugs.
25. The method of claim 15, further comprising defining the conductive plugs using a photolithography reticle, wherein forming the openings comprises employing the photolithography reticle.
26. The method of claim 25, wherein defining the conductive plugs uses a first radiation exposure level and forming the openings uses a second radiation exposure level, wherein the second radiation exposure level is different from the first radiation exposure level.
27. The method of claim 26, wherein defining the conductive plugs and forming the openings comprises employing the second radiation exposure level at more than about 5% below the first radiation exposure level.
28. The method of claim 27, wherein defining the conductive plugs and forming the openings comprises employing the second radiation exposure level at about 10% to about 15% below the first radiation exposure level.
29. The method of claim 26, wherein defining the conductive plugs and forming the openings comprises employing negative photoresist films, where the second radiation exposure level is more than the first radiation exposure level.
30. The method of claim 29, wherein defining the conductive plugs and forming the openings comprises employing the second radiation exposure level at more than about 5% above the first radiation exposure level.
31. The method of claim 25, wherein defining the conductive plugs comprises employing a first photoresist film having a thickness between about 500 nm and 1,500 nm, and forming the openings comprises employing a second photoresist film having a thickness between about 100 nm and 500 nm.
32. The method of claim 15, further comprising forming the conductive plugs with a CMP process prior to forming the isolation layer.
33. The method of claim 15, wherein forming the conductive plugs comprises depositing tungsten.